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    300/SMD TRANSISTOR A6 SUB Search Results

    300/SMD TRANSISTOR A6 SUB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    300/SMD TRANSISTOR A6 SUB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


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    PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor

    smd transistor A6

    Abstract: smd transistor A6 3 TFDS3000 Telefunken ir receiver SMD a6 Transistor a6 smd transistor
    Text: TFDS3000 Integrated Infrared Transceiver Module IrDA SIR Description The TFDS3000 is an infrared transceiver for data communication systems. The transceiver is compatible to the IrDA standard which allows data rates up to 115 kB/s. An internal AGC (Automatic Gain Control) ensures


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    PDF TFDS3000 TFDS3000 D-74025 15-Aug-96 smd transistor A6 smd transistor A6 3 Telefunken ir receiver SMD a6 Transistor a6 smd transistor

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


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    PDF HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC

    transistor SMD p16

    Abstract: transistor SMD b22 ISL95901 smd TRANSISTOR code b6 CRCW06033162F
    Text: Application Note 1743 Author: Jun Xiao Wide VIN Dual Integrated Buck Regulator With 6A/6A Continuous Output Current and LDOs Specifications FSW POSITION SWITCHING FREQUENCY kHz FSW = GND 300 FSW = OPEN 500 FSW = VCC 1000 Quick Setup Guide VIN RANGE (V) VOUT


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    PDF ISL95901EVAL1Z AN1743 transistor SMD p16 transistor SMD b22 ISL95901 smd TRANSISTOR code b6 CRCW06033162F

    smd transistor marking A6

    Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
    Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


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    PDF PBSS4620PA OT1061 PBSS5620PA. smd transistor marking A6 TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


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    PDF PBSS4620PA OT1061 PBSS5620PA.

    6 Pin LED PIRANHA

    Abstract: everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X
    Text: CATALOGUE 2014-2015 OPTOELECTRONIC COMPONENTS www.everlight.com EVERLIGHT THE SOURCE OF LIGHT EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable


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    PDF D-85737 SE-573 6 Pin LED PIRANHA everlight 50-215 smd transistor 2T EHP-A09K-BRTT-5670HEAFAD9K-1T8-AM PLR262 19-237A/R6GHBHC-B01/2T IRM-3638M-X

    smd transistor marking A6

    Abstract: ir sensing circuit using LM358 TRANSISTOR SMD MARKING CODE a6 water level control using lm358 TRANSISTOR SMD MARKING CODE LF temperature control using lm358 LM358I lm358 water level lm358 laser current driver smd transistor marking a7
    Text: LM358BP MICRO SMD QUALIFICATION PACKAGE Winter 1999 Table of Contents 1.0 Introduction 1.1 General Product Description. . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1 1.2 Technical Product Description . . . . . . . . . . . . . . . . . . . . . . . . . 1-1


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    PDF LM358BP AN-1112 LM358 smd transistor marking A6 ir sensing circuit using LM358 TRANSISTOR SMD MARKING CODE a6 water level control using lm358 TRANSISTOR SMD MARKING CODE LF temperature control using lm358 LM358I lm358 water level lm358 laser current driver smd transistor marking a7

    smd transistor A6 SUB

    Abstract: 6 PIN SMD IC FOR 15 W LED DRIVERS IDC12 PCA9665 smd zener diode code A5 JESD22-A114 JESD22-A115 JESD78 PCA9635 PCA9635PW
    Text: PCA9635 16-bit Fm+ I2C-bus LED driver Rev. 06 — 11 September 2008 Product data sheet 1. General description The PCA9635 is an I2C-bus controlled 16-bit LED driver optimized for Red/Green/Blue/Amber RGBA color mixing applications. Each LED output has its own


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    PDF PCA9635 16-bit PCA9635 smd transistor A6 SUB 6 PIN SMD IC FOR 15 W LED DRIVERS IDC12 PCA9665 smd zener diode code A5 JESD22-A114 JESD22-A115 JESD78 PCA9635PW

    PCA9635

    Abstract: AEC-Q100 JESD22-A114 JESD22-A115 JESD78 PCA9635PW TSSOP28 LDR15 Diodes smd E5H 300/smd transistor A6 SUB
    Text: PCA9635 16-bit Fm+ I2C-bus LED driver Rev. 07 — 16 July 2009 Product data sheet 1. General description The PCA9635 is an I2C-bus controlled 16-bit LED driver optimized for Red/Green/Blue/Amber RGBA color mixing applications. Each LED output has its own


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    PDF PCA9635 16-bit PCA9635 AEC-Q100 JESD22-A114 JESD22-A115 JESD78 PCA9635PW TSSOP28 LDR15 Diodes smd E5H 300/smd transistor A6 SUB

    Untitled

    Abstract: No abstract text available
    Text: PCA9624 8-bit Fm+ I2C-bus 100 mA 40 V LED driver Rev. 4 — 3 June 2014 Product data sheet 1. General description The PCA9624 is an I2C-bus controlled 8-bit LED driver optimized for voltage switch dimming and blinking 100 mA Red/Green/Blue/Amber RGBA LEDs. Each LED output


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    PDF PCA9624 PCA9624

    D-10

    Abstract: HLX6256 CDIP2-T28 nmos dynamic ram 6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


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    PDF HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 D-10 HLX6256 CDIP2-T28 nmos dynamic ram 6256

    hlx6256

    Abstract: D-10 nmos dynamic ram 6256 dynamic ram nmos 6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


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    PDF HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 hlx6256 D-10 nmos dynamic ram 6256 dynamic ram nmos 6256

    D-10

    Abstract: HLX6256
    Text: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


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    PDF HLX6256 1x106 1x1014 1x109 1x1011 1x10-10 D-10 HLX6256

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


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    PDF CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor

    DIODE SMD v105

    Abstract: DIODE SMD c336 smd V105 TP218 transistor 27C202 TCO-987 C219-33 diode V105 L-286 C345 plastic transistor
    Text: INTEGRATED CIRCUITS DATA SHEET SAA1575HL Global Positioning System GPS baseband processor Product specification Supersedes data of 1999 May 17 File under Integrated Circuits, IC18 1999 Jun 04 Philips Semiconductors Product specification Global Positioning System (GPS)


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    PDF SAA1575HL 80C51XA 285002/02/pp56 DIODE SMD v105 DIODE SMD c336 smd V105 TP218 transistor 27C202 TCO-987 C219-33 diode V105 L-286 C345 plastic transistor

    squib driver

    Abstract: AEB02726 AEP02725 AES02680 AES02722 AES02723 AET02609 AET02727 FIRING squib 6712
    Text: Dual Firing Airbag IC TLE 6712 Data Sheet 1 Overview 1.1 Features • Two independent squib channels each consisting of a high- side & a low-side switch • Thermal and short circuit protection for each switch • Current limitation for each firing loop P-DSO-24-1


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    PDF P-DSO-24-1 squib driver AEB02726 AEP02725 AES02680 AES02722 AES02723 AET02609 AET02727 FIRING squib 6712

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


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    PDF 167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650

    pca9624pw

    Abstract: PCA9624 JESD22-A115 JESD78 PCA9634 TSSOP24 HVQFN24 JESD22-A114 A2 SMD
    Text: PCA9624 8-bit Fm+ I2C-bus 100 mA 40 V LED driver Rev. 02 — 26 August 2009 Product data sheet 1. General description The PCA9624 is an I2C-bus controlled 8-bit LED driver optimized for voltage switch dimming and blinking 100 mA Red/Green/Blue/Amber RGBA LEDs. Each LED output


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    PDF PCA9624 PCA9624 pca9624pw JESD22-A115 JESD78 PCA9634 TSSOP24 HVQFN24 JESD22-A114 A2 SMD

    airbag

    Abstract: squib driver AEB02616 AEP02615 AES02680 AET02609 AET02618 TLE6714 FIRING squib
    Text: Quad Firing Airbag IC TLE 6714 Data Sheet 1 Overview 1.1 Features • Four independent squib channels each consisting of a high- side & a low-side switch • Thermal and short circuit protection for each switch • Current limitation for each firing loop P-DSO-28-1


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    PDF P-DSO-28-1 airbag squib driver AEB02616 AEP02615 AES02680 AET02609 AET02618 TLE6714 FIRING squib

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)


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    PDF HLX6256 1x106ra 1x10l4 1x101 4551A72

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)


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    PDF 1x106rad HLX6256 1x109 28-Lead CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)


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    PDF HLX6228 1x106 1x101 1x109 0014flb 6C634

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


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    PDF 1x106rad HLX6228 1x101 1x109 32-Lead