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Toshiba America Electronic Components 2SK3798(STA4,Q,M) MOSFETs POWER MOSFET TRANSISTOR TO-220(SIS)PD=40W F=1MHZ
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Mouser Electronics	2SK3798(STA4,Q,M)		250			1 $1.48 10 $1.01 100 $0.982 1000 $0.737 10000 $0.707	Buy Now
Toshiba America Electronic Components 2SK3798(Q) Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220SIS (Alt: 2SK3798(Q))
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EBV Elektronik	2SK3798(Q)			26 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SK3798 Q Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK3798(Q,M)		Toshiba	2SK3798 - Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220NIS		Original	PDF

2SK3798 Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k3798 Abstract: 2SK3798 Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798 k3798 2SK3798	PDF
Untitled Abstract: No abstract text available Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798	PDF
Untitled Abstract: No abstract text available Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Abstract: 2SK3798 equivalent 2SK3798 K379 Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798 2SK3798 equivalent 2SK3798 K379	PDF
K3798 Abstract: 2SK3798 Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 K3798 2SK3798	PDF
Untitled Abstract: No abstract text available Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Abstract: No abstract text available Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Abstract: No abstract text available Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Abstract: 2SK3798 K379 Text: 2SK3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798 K379	PDF
k3798 Abstract: 2SK3798 Text: 2SK3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV 2SK3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798	PDF
2sk3625 Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917 Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917	PDF
2sK2750 equivalent Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625 Text: SELECTION GUIDE Power MOSFET www.toshiba-components.com X3 POWERMOSFET07 PowerMosfet-Brosch.indd 1 03.05.2007 13:53:26 Uhr 2 V S-6 Part Number (TSOP6) Maximum Ratings Circuit VDSS(V) ID(A) Configuration 10V RDS (ON) max (m ⍀) 4.5V 2.5V 2.0V 1.8V Qg typ. Ciss typ.	Original	POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625	PDF
2SK3878 equivalent Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718	PDF
2sk4110 Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3	Original	BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent	PDF

TK12A10K3 Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3 Text: 製品カタログ 2010-9 東芝半導体製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3	PDF
2sK2750 equivalent Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238 Text: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21	Original	O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF
Toshiba TMPA8873 Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6	Original	SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853	PDF
TA1343NG Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 Text: システムカタログシステムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理伝送処理	Original	p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122	PDF
tpc8118 equivalent replacement Abstract: SSM3J307T Zener diode smd 071 A01 Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
fast tlp785 Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W	Original	SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Text: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03	PDF
TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	BCE0082B TPCA8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028	PDF

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2SK3798 Q Search Results

2SK3798 Q Price and Stock

Toshiba America Electronic Components 2SK3798(STA4,Q,M)

Toshiba America Electronic Components 2SK3798(Q)

2SK3798 Q Datasheets (1)

2SK3798 Q Datasheets Context Search

k3798

Untitled

Untitled

k3798

K3798

Untitled

k3798

k3798

k3798

k3798

2sk3625

2sK2750 equivalent

2SK3878 equivalent

2sk4110

TK12A10K3

2sK2750 equivalent

2SK3567 equivalent

Toshiba TMPA8873

TA1343NG

tpc8118 equivalent replacement

5252 F 1009 4-pin

fast tlp785

2SK4207

TPCA*8064