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Toshiba America Electronic Components 2SK3798(STA4,Q,M) POWER MOSFET TRANSISTOR TO-220(S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3798(STA4,Q,M)	Tube			50	1 - 10 - 100 $0.9618 1000 $0.9618 10000 $0.9618	Buy Now
Mouser Electronics	2SK3798(STA4,Q,M)		250			1 $1.48 10 $1.01 100 $0.982 1000 $0.737 10000 $0.707	Buy Now
Bristol Electronics	2SK3798(STA4,Q,M)		40		3	1 - 10 $1.6875 100 $1.4062 1000 $1.4062 10000 $1.4062	Buy Now
Toshiba America Electronic Components 2SK3798(STA4 MOSFET N-Channel Enhancement Mode 900V 3-Pin SC-67 - Rail/Tube (Alt: 2SK3798(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK3798(STA4	Tube		32 Weeks	50	1 - 10 - 100 $0.61388 1000 $0.5562 10000 $0.5562	Buy Now
Vishay Intertechnologies CRCW060323R7FKEA Thick Film Resistors - SMD 1/10watt 23.7ohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW060323R7FKEA	Reel	10,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00324	Buy Now
Vishay Intertechnologies CRCW201040K2FKEF Thick Film Resistors - SMD 3/4watt 40.2Kohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW201040K2FKEF	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.0289	Buy Now
Amphenol Corporation 88-565774-18P Circular MIL Spec Connector 18P SZ 14 SOCKET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	88-565774-18P	Each	43		1	1 $47.77 10 $33.56 100 $33.56 1000 $33.56 10000 $33.56	Buy Now

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K3798 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k3798 Abstract: 2SK3798 K379 Text: K3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798 K379	PDF
Untitled Abstract: No abstract text available Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Abstract: 2SK3798 Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798 k3798 2SK3798	PDF
k3798 Abstract: 2SK3798 equivalent 2SK3798 K379 Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798 2SK3798 equivalent 2SK3798 K379	PDF
Untitled Abstract: No abstract text available Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798	PDF
k3798 Abstract: No abstract text available Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Abstract: No abstract text available Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 k3798	PDF
k3798 Abstract: 2SK3798 Text: K3798 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	2SK3798 SC-67 2-10U1B k3798 2SK3798	PDF
K3798 Abstract: 2SK3798 Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)	Original	2SK3798 K3798 2SK3798	PDF
Untitled Abstract: No abstract text available Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8 S (typ.)	Original	2SK3798	PDF