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    2SK3134 Search Results

    2SK3134 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3134STL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 75A 5Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SK3134L-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 75A 5Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
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    2SK3134 Price and Stock

    Hitachi Ltd 2SK313491STR

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SK313491STR 3,115
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    2SK3134 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3134 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3134L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134L Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 75; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.004; RDS (ON) typ. (ohm) @4V[4.5V]: 0.0055; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6800; toff ( us) typ: 0.55; Package: LDPAK (L) Original PDF
    2SK3134L Renesas Technology High Speed Power Amplifier, 30V 75A 100W, MOS-FET N-Channel enhanced Original PDF
    2SK3134L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3134S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134S Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 75; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.004; RDS (ON) typ. (ohm) @4V[4.5V]: 0.0055; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6800; toff ( us) typ: 0.55; Package: LDPAK (S)- (1) Original PDF
    2SK3134S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3134STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK3134 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition Feb. 1, 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3134 ADE-208-721B Hitachi DSA002749

    DA300

    Abstract: Hitachi DSA00280
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline LDPAK


    Original     		PDF 2SK3134 ADE-208-721B D-85622 DA300 Hitachi DSA00280

    Untitled

    Abstract: No abstract text available
    Text: 2SK3134 Spice parameter .SUBCKT 2sk3134 1 2 3 * Model generated on May 27, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:


    Original     		PDF 2SK3134 1e-32 11491e-05 77661e-06 5e-09 06236e-09

    2SK3134

    Abstract: DSV80 Hitachi DSA00239
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3134 ADE-208-721B DSV80 Hitachi DSA00239

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition January 1999 Features • Low on-resistance R DS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline 2SK3134(L),2SK3134(S)


    Original     		PDF 2SK3134 ADE-208-721B Hitachi DSA00279

    2SK3134

    Abstract: 2SK3134L-E 2SK3134STL-E PRSS0004AE-A
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1066-0400 (Previous: ADE-208-721B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3134 REJ03G1066-0400 ADE-208-721B) PRSS0004AE-A PRSS0004AE-B 2SK3134L-E 2SK3134STL-E PRSS0004AE-A

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    2SK3134

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    2SK3134

    Abstract: 2SK3134L-E 2SK3134STL-E PRSS0004AE-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    74ls111

    Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00
    Text: INDEX GENERAL General Information Sales Locations Semiconductor Packages FLAT PANEL CONTROLLER / DRIVER Liquid Crystal Display Controller MICROCONTROLLER Microcontroller General Micro. Shortform Micro. Overview Micro. Hardware Manual Micro. Program. Manual


    Original     		PDF Switchin2SC3512 2SC3513 2SC3793 2SC3867 2SC4126 2SC4196 2SC4197 2SC4260 2SC4261 2SC4262 74ls111 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00

    TO220CFM

    Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
    Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D


    Original     		PDF HAT1024R ADE-208-476G pdf\7420e HAT1044M HAT1053M HAT2053M HAT2054M TO220CFM TO220FM 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T

    Untitled

    Abstract: No abstract text available
    Text: 2SK3134 L , 2SK3134(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(o„) = 4 m il typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK ADE-208-721B (Z) 3rd. Edition


    OCR Scan     		PDF 2SK3134 ADE-208-721B 2SK3134Ã 40815HITEC