2SK3043
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2
|
Original
|
PDF
|
2SK3043
100mJ
O-220D
2SK3043
|
2SK3045
Abstract: DSA003714
Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2
|
Original
|
PDF
|
2SK3045
O-220D
2SK3045
DSA003714
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed
|
Original
|
PDF
|
2002/95/EC)
2SK3046
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed
|
Original
|
PDF
|
2002/95/EC)
2SK3045
|
k3047
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed
|
Original
|
PDF
|
2002/95/EC)
2SK3047
k3047
|
5a diode
Abstract: 2SK3042
Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 ■ Applications
|
Original
|
PDF
|
2SK3042
O-220D
5a diode
2SK3042
|
2SK3042
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm 9.9±0.3 3.0±0.5 15.0±0.5
|
Original
|
PDF
|
2SK3042
O-220D-A1
2SK3042
|
k3047
Abstract: 2SK3047
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ
|
Original
|
PDF
|
2002/95/EC)
2SK3047
k3047
2SK3047
|
2SK3045
Abstract: 15a diode
Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C
|
Original
|
PDF
|
2SK3045
O-220D-A1
2SK3045
15a diode
|
2SK3048
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C
|
Original
|
PDF
|
2SK3048
O-220D-A1
2SK3048
|
2SK3042
Abstract: drain
Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C
|
Original
|
PDF
|
2SK3042
O-220D-A1
2SK3042
drain
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed
|
Original
|
PDF
|
2002/95/EC)
2SK3044
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed
|
Original
|
PDF
|
2002/95/EC)
2SK3047
O-220D-A1
K3047
|
2SK304
Abstract: ITR00647 ITR00648
Text: 2SK304 注文コード No. N 0 8 5 0 F 三洋半導体データシート 半導体ニューズ No.N850E をさしかえてください。 2SK304 N チャネル接合型シリコン電界効果トランジスタ 低周波増幅用 用途 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。
|
Original
|
PDF
|
2SK304
N850E
IM/42594HO
ITR00652
ITR00651
ITR00653
ITR00654
ITR00655
2SK304
ITR00647
ITR00648
|
|
|
K3046
Abstract: 2SK3046
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ
|
Original
|
PDF
|
2002/95/EC)
2SK3046
K3046
2SK3046
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed
|
Original
|
PDF
|
2002/95/EC)
2SK3046
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed
|
Original
|
PDF
|
2002/95/EC)
2SK3045
O-220D-A1
K3045
|
2SK3048
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay
|
Original
|
PDF
|
2SK3048
O-220D
2SK3048
|
2SK3047
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2
|
Original
|
PDF
|
2SK3047
O-220D
2SK3047
|
2SK3044
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C
|
Original
|
PDF
|
2SK3044
130mJ
O-220D-A1
2SK3044
|
k3044
Abstract: 2SK3044
Text: Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown
|
Original
|
PDF
|
2SK3044
k3044
2SK3044
|
2SK3049
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C
|
Original
|
PDF
|
2SK3049
O-220D-A1
2SK3049
|
2sk4005
Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321
|
Original
|
PDF
|
2SK301
2SK302
2SK303
2SK304
2SK308
2SK309
2SK310
2SK311
2SK312
2SK313
2sk4005
2SK385
2SK332
2SK339
2SK309
2SK400
2SK336
2SK386
2sk317
2SK354
|
2SK304
Abstract: No abstract text available
Text: Ordering n u m b e r:E N 850E No,850E II 2SK304 N-Channel Junction Silicon FET Low-Frequency Amp Applications Applications • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators. Absolute Maximum Ratings atTa = 25°C
|
OCR Scan
|
PDF
|
EN850E
2SK304
-10HA
2SK304
|
