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Panasonic Electronic Components 2SK303100L MOSFET N-CH 100V 15A U-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK303100L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.88101	Buy Now
	2SK303100L	Cut Tape			1	1 $1.2 10 $1.2 100 $1.2 1000 $1.2 10000 $1.2	Buy Now
	2SK303100L	Digi-Reel			1	1 $1.2 10 $1.2 100 $1.2 1000 $1.2 10000 $1.2	Buy Now
Panasonic Electronic Components 2SK303000L MOSFET N-CH 100V 8A U-G1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK303000L	Digi-Reel			1	1 $1.15 10 $1.15 100 $1.15 1000 $1.15 10000 $1.15	Buy Now
	2SK303000L	Cut Tape			1	1 $1.15 10 $1.15 100 $1.15 1000 $1.15 10000 $1.15	Buy Now
	2SK303000L	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.72779	Buy Now
Rochester Electronics LLC 2SK303-3-TB-E NCH J-FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK303-3-TB-E	Bulk			1,480	1 - 10 - 100 - 1000 - 10000 $0.2	Buy Now
Aptina Imaging 2SK303-3-TB-E 2SK303-3-TB-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK303-3-TB-E		15,000		1,810	1 - 10 - 100 - 1000 - 10000 $0.2073	Buy Now
	2SK303-3-TB-E		3,000		1,810	1 - 10 - 100 - 1000 - 10000 $0.2073	Buy Now
onsemi 2SK303-3-TB-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Farnell	2SK303-3-TB-E	Each			1,500	1 - 10 - 100 - 1000 - 10000 £0.172	Buy Now
Rochester Electronics	2SK303-3-TB-E		18,000		1	1 $0.195 10 $0.195 100 $0.1833 1000 $0.1658 10000 $0.1658	Buy Now

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2SK303 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK303	Kexin	N-Channel Junction Silicon FET	Original	PDF
2SK303	Sanyo Semiconductor	General-purpose amplifiers, impedance converters	Original	PDF
2SK303	TY Semiconductor	N-Channel Junction Silicon FET - SOT-23	Original	PDF
2SK303	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK303	Unknown	General Purpose Transistors	Scan	PDF
2SK303	Unknown		Scan	PDF
2SK303	Unknown	SMD, Silicon N-Channel JFET	Scan	PDF
2SK303	Unknown	FET Data Book	Scan	PDF
2SK303	Sanyo Semiconductor	Sanyo Datasheets, Cross References and Circuit Examples	Scan	PDF
2SK303	Sanyo Semiconductor	Small Signal Junction FETS / MOSFETS	Scan	PDF
2SK303	Sanyo Semiconductor	CP Type Transistors	Scan	PDF
2SK303	Sanyo Semiconductor	Small Signal FETs	Scan	PDF
2SK3030	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3030	Panasonic	N-Channel Power F-MOS FET	Original	PDF

2SK3030	Panasonic	Silicon N-Channel Power MOSFET	Original	PDF
2SK303000L	Panasonic	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 8A UG-1	Original	PDF
2SK3031	Kexin	N-Channel Power F-MOSFET	Original	PDF
2SK3031	Panasonic	N-Channel Power F-MOS FET	Original	PDF
2SK3031	Panasonic	Silicon N-Channel Power F-MOS FET	Original	PDF
2SK3031	Panasonic	Silicon N-Channel Power MOSFET	Original	PDF

2SK303 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK303V4 Abstract: 2SK303V3 2sK303L 2SK303 Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 Preliminary JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion * Halogen Free	Original	PDF	2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303-V2 2SK303-V3 2SK303-V4 2SK303-V5 QW-R206-071 2SK303V4 2SK303V3 2sK303L 2SK303
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3036
2SK3034 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3034 2SK3034
5A diode Abstract: 2SK3037 Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3037 5A diode 2SK3037
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3032
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm	Original	PDF	2SK3035
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3037
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number	Original	PDF	2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-AQ3-R 2SK303G-x-AQ3-R OT-723
2SK3033 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3033 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3033 2SK3033
2SK3030 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3030 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3030 2SK3030
2SK3032 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3032 2SK3032
K3030 Abstract: 2SK3030 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3030 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 1 3 0.75±0.1 2.3±0.1 4.6±0.1 1 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2002/95/EC) 2SK3030 SC-63 K3030 2SK3030
2SK3036 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3036 2SK3036
Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3034

Untitled Abstract: No abstract text available Text: Power F-MOS FETs 2SK3037 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3037
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS  FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion  ORDERING INFORMATION	Original	PDF	2SK303 2SK303G-xx-AE3-R 2SK303G-xx-A3C-R 2SK303G-xx-AQ3-R 2SK303L-xx-T92-B 2SK303G-xx-T92-B 2SK303L-xx-T92-K 2SK303G-xx-T92-K OT-23 OT-113S
2SK303L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number	Original	PDF	2SK303 2SK303L-x-AE3-R 2SK303G-x-AE3-R OT-23 2SK303L-x-A3C-R 2SK303G-x-A3C-R OT-113S 2SK303L-x-T92-B 2SK303G-x-T92-B 2SK303L-x-T92-K 2SK303L
2SK3036 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3036 2SK3036
K3031 Abstract: 2SK3031 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 0.5±0.1 0.8 max. 1.8±0.1 0.75±0.1 2.3±0.1 4.6±0.1 1 ■ Absolute Maximum Ratings TC = 25°C	Original	PDF	2002/95/EC) 2SK3031 SC-63 K3031 2SK3031
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3031 Silicon N-channel power MOSFET • Features Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 Unit V V A A mJ W 2 (5.5) 1 Parameter Symbol Rating Drain-source surrender voltage VDSS 100	Original	PDF	2002/95/EC) 2SK3031 SC-63 K3031
2SK3031 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3031 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3031 2SK3031
2SK3034 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage	Original	PDF	2SK3034 2SK3034
2SK3036 Abstract: No abstract text available Text: Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm	Original	PDF	2SK3036 2SK3036
2SK303 Abstract: No abstract text available Text: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j\|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and	OCR Scan	PDF	EN856F 2SK303 2SK303

2SK303 Search Results

2SK303 Price and Stock

Panasonic Electronic Components 2SK303100L

Panasonic Electronic Components 2SK303000L

Rochester Electronics LLC 2SK303-3-TB-E

Aptina Imaging 2SK303-3-TB-E

onsemi 2SK303-3-TB-E

2SK303 Datasheets (38)

2SK303 Datasheets Context Search

2SK303V4

Untitled

2SK3034

5A diode

Untitled

Untitled

Untitled

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2SK3033

2SK3030

2SK3032

K3030

2SK3036

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Untitled

2SK303L

2SK3036

K3031

Untitled

2SK3031

2SK3034

2SK3036

2SK303