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    Toshiba America Electronic Components 2SK2173

    SILICON N CHANNEL MOS TYPE (L2-PHI-MOSV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    2SK2173 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2173 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2173 Toshiba N-Channel MOSFET Original PDF
    2SK2173 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2173 Toshiba Original PDF
    2SK2173 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2173 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SK2173 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (LL-pi-MOSV) Scan PDF
    2SK2173(F) Toshiba 2SK2173 - MOSFET N-CH 60V 50A 2-16C1B Original PDF

    2SK2173 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2173

    Abstract: K217 2SK2173
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance


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    PDF 2SK2173 K2173 K217 2SK2173

    K2173

    Abstract: 2SK2173
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


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    PDF 2SK2173 K2173 2SK2173

    Untitled

    Abstract: No abstract text available
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


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    PDF 2SK2173

    K2173

    Abstract: 2SK2173
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance


    Original
    PDF 2SK2173 K2173 2SK2173

    K2173

    Abstract: 2SK2173 jeita sc-65 25A1317
    Text: 2SK2173 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2173 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 13mΩ(標準) z オン抵抗が低い。


    Original
    PDF 2SK2173 10VID SC-65 2-16C1B K2173 2002/95/EC) K2173 2SK2173 jeita sc-65 25A1317

    K2173

    Abstract: 2SK2173
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


    Original
    PDF 2SK2173 K2173 2SK2173

    Untitled

    Abstract: No abstract text available
    Text: 2SK2173 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2173 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 13mΩ(標準) z オン抵抗が低い。


    Original
    PDF 2SK2173

    2SK2173

    Abstract: K2173 SC-65
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON−resistance : RDS (ON) = 13 mΩ (typ.) z High forward transfer admittance


    Original
    PDF 2SK2173 2SK2173 K2173 SC-65

    K2173

    Abstract: 2SK2173
    Text: 2SK2173 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2173 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) l High forward transfer admittance


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    PDF 2SK2173 K2173 2SK2173

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    wps1

    Abstract: transistor Sh 550
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SHIBA TECHNICAL 2 S K 2 173 DATA SILICON N CHANNEL MOS TYPE L 2-tt-M O SV (2SK2173) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan
    PDF 2SK2173 2SK2173) 13mil 100/j 2SK2173 wps1 transistor Sh 550

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 2 173 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK2173) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan
    PDF 2SK2173 2SK2173) 100/j 2SK2173

    2SK2173

    Abstract: SC-65
    Text: TOSHIBA 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2 S K 2 1 73 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan
    PDF 2SK2173 -13mO 2SK2173 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K 2 1 73 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5.9M A X.


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    PDF 2SK2173 13mf2 20kil)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2 S K 2 1 73 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5 .9 M A X .


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    PDF 2SK2173 100/jA 20kf2)

    2SK2173

    Abstract: SC-65
    Text: T O S H IB A 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2 S K 2 1 73 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE


    OCR Scan
    PDF 2SK2173 2SK2173 SC-65

    2SK2173

    Abstract: SC-65
    Text: TOSHIBA 2SK2173 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2 S K 2 1 73 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS


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    PDF 2SK2173 2SK2173 SC-65

    transistor Sh 550

    Abstract: No abstract text available
    Text: TO SH IB A 2SK2173 TOSHIBA FIELD EFFECT TRANSISTOR i <v ; k SILICON N CHANNEL MOS TYPE L2-tt-M O SV • m. 1 1 7 3 w HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS


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    PDF 2SK2173 20ki2) --25Q 371/iH transistor Sh 550

    Jab zener

    Abstract: No abstract text available
    Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)


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    PDF T0-220 2SJ334 2SK2312 Packag55 2SK1379 Jab zener