Untitled
Abstract: No abstract text available
Text: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
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2SK1336
REJ03G0933-0200
ADE-208-1273)
PRSS0003ZA-A
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Hitachi DSA002757
Abstract: No abstract text available
Text: 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1336
Hitachi DSA002757
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2SK1336
Abstract: Hitachi DSA00396
Text: 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1336
2SK1336
Hitachi DSA00396
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2SK1336
Abstract: DSA003639
Text: 2SK1336 Silicon N-Channel MOS FET ADE-208-1273 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1336
ADE-208-1273
2SK1336
DSA003639
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2SK1336
Abstract: 2SK1336TZ-E PRSS0003DA-A PRSS0003ZA-A SC-43A
Text: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
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2SK1336
REJ03G0933-0200
ADE-208-1273)
PRSS0003ZA-A
2SK1336
2SK1336TZ-E
PRSS0003DA-A
PRSS0003ZA-A
SC-43A
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SK1336 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1336
Hitachi DSA002713
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Hitachi DSA00279
Abstract: 2SK1336
Text: 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1336
Hitachi DSA00279
2SK1336
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Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1336
D-85622
Hitachi DSA002780
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Untitled
Abstract: No abstract text available
Text: 2SK1336 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC)
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2SK1336
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2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
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HAT2038R/HAT2038RJ
ADE-208-666C
HAT2038R
HAT2038RJ
pdf\7420e
HAT1044M
HAT1053M
2SK3235
2SK3379
Hitachi DSA00276
HAT1040T
2SJ517
2SK1835
TO220CFM
2SK3421
HAT1053
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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2SK1336
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: 2SK1697 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,
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2SK1697
2SK1336.
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive
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2SK1697
Hitachi DSA00279
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Untitled
Abstract: No abstract text available
Text: 2SK1336 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
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2SK1336
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2SK1336
Abstract: No abstract text available
Text: 3 6 3 -0 2 ^ 2SK1336 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES # Low On-Resistance # High Speed Switching • Low Drive Current 4 V Gate Drive Device • Suitable for Motor Drive, DC-DC Converter, Power — Can be driven from 5 V source
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Untitled
Abstract: No abstract text available
Text: 2SK1336 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistarice • H igh speed sw itching • Low drive current • 4 V gate drive device —- Can be driven from 5 V source • Suitable for m otor drive, D C -D C converter, pow er sw itch and solenoid drive
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2SK1336
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2SK1336
Abstract: DIODO
Text: HITACHI 2SK1336 S ILIC O N N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING • FEA TU RES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device — Can be driven from 5 V source • Suitable for Motor Drive, DC-DC Converter, Power
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2SK1336
Ta-25
2SK1336
DIODO
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2SJ235
Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SJ235
2sk1299
2SK1878
2SJ299
2sj2 high voltage p channel mosfet
2SJ214
2sk mosfet
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2SK44
Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30W
0-50W
0-100W
00-200W
2SK579
2SK580
2SK1151
2SK1152
2SK1153
2SK1154
2SK44
2SJ182
2SJ214
2SK513
2SJ235
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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