2SK117 Search Results

2SK117 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK1170		Renesas Electronics Corporation	Nch Single Power Mosfet 500V 20A 270Mohm To-3P
2SK1170-E		Renesas Electronics Corporation	Nch Single Power Mosfet 500V 20A 270Mohm To-3P

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Renesas Electronics Corporation 2SK1170-E Trans MOSFET N-CH Si 500V 20A 3-Pin(3+Tab) TO-3P Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK1170-E		50		4	1 - 10 $7.2 100 $6.7375 1000 $6.7375 10000 $6.7375	Buy Now
Avnet Asia	2SK1170-E			18 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	2SK1170-E			28 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	2SK1170-E	Tube	50			1 $7.72 10 $5.72 100 $5.35 1000 $5.35 10000 $5.35	Buy Now
Others 2SK1178 2SK1178
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK1178		8			1 $12 10 $9 100 $9 1000 $9 10000 $9	Buy Now
Hitachi Ltd 2SK1170 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK1170		80			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK117
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
New Advantage Corporation	2SK117		88		1	1 $12 10 $12 100 $12 1000 $12 10000 $12	Buy Now

2SK117 Datasheets (55)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK117	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK117	Unknown	FET Data Book	Scan	PDF
2SK117	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SK117	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK117	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SK117	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK117	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE	Scan	PDF
2SK117	Toshiba	N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)	Scan	PDF
2SK117	Toshiba	Junction FETs	Scan	PDF
2SK117	Toshiba	N-Channel MOSFET	Scan	PDF
2SK1170	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SK1170	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF
2SK1170	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF
2SK1170	Hitachi Semiconductor	Silicon N-Channel MOS FET	Original	PDF

2SK1170	Renesas Technology	Silicon N Channel MOS FET	Original	PDF
2SK1170	Renesas Technology	Silicon N-Channel MOS FET	Original	PDF
2SK1170	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
2SK1170	Unknown	FET Data Book	Scan	PDF
2SK1170	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK1170	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

2SK117 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK1177 Abstract: FM20 Text: 2SK1177 External dimensions 1.FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±2.5 A I DSS A VTH 2.0 30 (Tc = 25ºC) W Re (yfs) 1.5 ±10 (Tch ID (pulse) PD 150ºC)	Original	PDF	2SK1177 2SK1177 FM20
2SK1177 Abstract: FM20 Text: 2SK1177 External dimensions 1.FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 V Conditions I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA	Original	PDF	2SK1177 2SK1177 FM20
2SK1170 Abstract: 2SK1169 DSA003638 Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET ADE-208-1254 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter	Original	PDF	2SK1169, 2SK1170 ADE-208-1254 2SK1169 2SK1170 2SK1169 DSA003638
2SK117 Abstract: 2SK117 gr TOSHIBA 2SK117 Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High \|Yfs\|: \|Yfs\| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)	Original	PDF	2SK117 2SK117 2SK117 gr TOSHIBA 2SK117
2SK1179 Abstract: FM20 on10m Text: 2SK1179 External dimensions 2 . FM100 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max VDSS 500 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V	Original	PDF	2SK1179 FM100 2SK1179 FM20 on10m
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	PDF	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
2SK1178 Abstract: FM20 Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±4.0 A I DSS A VTH 2.0 35 (Tc = 25ºC) W Re (yfs) 2.4 ±16 (Tch ID (pulse) PD 150ºC)	Original	PDF	2SK1178 2SK1178 FM20
2sk129 Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119	Original	PDF	2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
2SK1169 Abstract: 2SK1170 Hitachi DSA003756 Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P	Original	PDF	2SK1169, 2SK1170 2SK1169 2SK1169 2SK1170 Hitachi DSA003756
2SK117 Abstract: 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117 Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High \|Yfs\|: \|Yfs\| = 15 mS typ. (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.)	Original	PDF	2SK117 SC-43 2SK117 2SK117 gr TOSHIBA 2SK117 2sk1173 TRANSISTOR 2SK117
2SK1178 Abstract: FM20 Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max VDSS 500 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V	Original	PDF	2SK1178 FM100 2SK1178 FM20
Untitled Abstract: No abstract text available Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1	Original	PDF	2SK1169, 2SK1170 2SK1169
2SK1179 Abstract: No abstract text available Text: 2SK1179 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 Conditions V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500	Original	PDF	2SK1179 FM100 2SK1179
Hitachi DSA002780 Abstract: No abstract text available Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P	Original	PDF	2SK1169, 2SK1170 2SK1169 2SK1170 D-85622 Hitachi DSA002780

2sk117 Abstract: 2SK1173 2SK117 gr TOSHIBA 2SK117 Text: 2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High \|Yfs\|: \|Yfs\| = 15 mS typ. (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.)	Original	PDF	2SK117 2sk117 2SK1173 2SK117 gr TOSHIBA 2SK117
2SC1815 Abstract: 2sk117 1D4B42 2SK30ATM 6D4B41 2SC185 k 513 2SC521A 2SD867 3D4B41 Text: [8] 4. 電源回路 4.1 高安定基準電源回路 Vin = 15 V~40 V RD FET の PD 制限 2SK117 RS ↓ Iz ~ − 6 mA → ∆ID ∼ −零 ∆Ta Vout 02CZ5.1-Y 定電圧電源回路 (1) 12 V, 50 mA Vo = 2 V (0~50 mA) 200 µF 2.2 kΩ 1 kΩ 02CZ6.8 Vi = 16 ± 2 V	Original	PDF	2SK117 02CZ5 02CZ6 2SC1815 2SC3419 2SC521A 2SC1815 2sk117 1D4B42 2SK30ATM 6D4B41 2SC185 k 513 2SC521A 2SD867 3D4B41
2sk170 FET Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14 Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch	Original	PDF	2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14
2SK1178 Abstract: FM20 Text: 2SK1178 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS (Ta = 25ºC) Ratings typ min Unit max 500 V Conditions I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500	Original	PDF	2SK1178 2SK1178 FM20
2SK117 Abstract: 2SK117 gr Text: T O S H IB A 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. • High \|Yfe\| : IYfs\| = 15mS Typ. (VDS = 10V, v Gs = o) • High Breakdown Voltage 0-45 : V g d S = - 50V	OCR Scan	PDF	2SK117 2SK117 2SK117 gr
2SK117 Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117 Text: 2SK117 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AMPLIFIER APPLICATIONS U n it in mm 5.1 MAX. • H igh \|Yfc\| : \|Yfs \| = 15mS Typ. (VDS = 10V, V g s = 0) • H igh Breakdown Voltage • VGDS= - 50V	OCR Scan	PDF	2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117
2SK117 Abstract: TOSHIBA 2SK117 TRANSISTOR 2SK117 Text: 2SK117 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS 5.1 MAX. : \|Yfs\| = 15mS Typ. • High \|Yfs\| • • High Breakdown Voltage • VGDS= - 50V : NF = l.OdB (Typ.) (VDg = 10V,	OCR Scan	PDF	2SK117 2SK117 TOSHIBA 2SK117 TRANSISTOR 2SK117
2SK241 Equivalent FET Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo	OCR Scan	PDF	OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Untitled Abstract: No abstract text available Text: TO S H IBA 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS . 5.1 MAX. : \|Yfs\| = 15mS Typ. (VDS = 10V, VGS = 0) • High \|Yfs\| • • High Breakdown Voltage : V g d S = - 50V	OCR Scan	PDF	2SK117
Untitled Abstract: No abstract text available Text: 2SK1169, 2SK1170 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter	OCR Scan	PDF	2SK1169, 2SK1170

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2SK117 Search Results

2SK117 Result Highlights (2)

2SK117 Price and Stock

Renesas Electronics Corporation 2SK1170-E

Others 2SK1178

Hitachi Ltd 2SK1170

Toshiba America Electronic Components 2SK117

2SK117 Datasheets (55)

2SK117 Datasheets Context Search

2SK1177

2SK1177

2SK1170

2SK117

2SK1179

std2n52

2SK1178

2sk129

2SK1169

2SK117

2SK1178

Untitled

2SK1179

Hitachi DSA002780

2sk117

2SC1815

2sk170 FET

2SK1178

2SK117

2SK117

2SK117

2SK241 Equivalent FET

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