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    2SK1123-A Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
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    Toshiba America Electronic Components 2SK1124

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    Toshiba America Electronic Components 2SK1120

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    2SK112 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK112 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK112 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK112 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK112 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK112 Unknown FET Data Book Scan PDF
    2SK112 Toshiba (2SK11x) N-CHANNEL JFET TRANSISTOR Scan PDF
    2SK1120 Toshiba TRANS MOSFET N-CH 1000V 8A 3(2-16C1B) Original PDF
    2SK1120 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK1120 Toshiba N-Channel MOSFET Original PDF
    2SK1120 Toshiba Original PDF
    2SK1120 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1120 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1120 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1120 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1120 Unknown Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan PDF
    2SK1120 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan PDF
    2SK1120 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(pi-MOSII.5) Scan PDF
    2SK1120(F) Toshiba 2SK1120 - TRANSISTOR 8 A, 1000 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original PDF
    2SK1120(F,T) Toshiba 2SK1120 - Trans MOSFET N-CH 1KV 8A 3-Pin TO-3P(W) T/R Original PDF
    2SK1122 NEC Semiconductor Selection Guide 1995 Original PDF

    2SK112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR k1120

    Abstract: k1120
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.)


    Original     		PDF 2SK1120 2-16C1B TRANSISTOR k1120 k1120

    2SK1123

    Abstract: MP-88
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK1123 N チャネル パワーMOS FET スイッチング用 2SK1123 は，N チャネル縦形パワーMOS FET で，5 V 電源系 IC の出力による直接駆動が可能な高速スイッチング


    Original     		PDF 2SK1123 2SK1123 D18440JJ2V0DS00 TC-7540 D18440JJ2V0DS MP-88

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    k1120

    Abstract: TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA
    Text: 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		PDF 2SK1120 k1120 TRANSISTOR k1120 2SK1120 power device k1120 transistor 2SK1120 power transistor k1120 2SK1120 DATA

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


    Original     		PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131

    2SK1123

    Abstract: MP-88 Nec AC 160
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1123 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1123 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS on 1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A)


    Original     		PDF 2SK1123 2SK1123 MP-88 Nec AC 160

    TRANSISTOR k1120

    Abstract: 2sk1120
    Text: 2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs|= 4.0 S (typ.) Low leakage current


    Original     		PDF 2SK1120 TRANSISTOR k1120 2sk1120

    D1843

    Abstract: 2SK1122 k1995 TC-7539 MP-88
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SK1122 N チャネル パワーMOS FET スイッチング用 2SK1122 は，N チャネル縦形パワーMOS FET で，5 V 電源系 IC の出力による直接駆動が可能な高速スイッチング


    Original     		PDF 2SK1122 2SK1122 D18439JJ2V0DS00 TC-7539 D18439JJ2V0DS D1843 k1995 TC-7539 MP-88

    transistor 2SK1120

    Abstract: CL226 2SK1120
    Text: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK1120 --300nA transistor 2SK1120 CL226 2SK1120

    TH12E

    Abstract: 2SK1123 MEI-1202 TEA-1035 esio Nec AC 160
    Text: DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance


    OCR Scan     		PDF 2SK1123 2SK1123 IEI-1209) TH12E MEI-1202 TEA-1035 esio Nec AC 160

    2SK1122

    Abstract: TEA-1035 MEI-1202 tf155
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET


    OCR Scan     		PDF 2SK1122 2SK1122 IEI-1209) TEA-1035 MEI-1202 tf155

    Untitled

    Abstract: No abstract text available
    Text: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,


    OCR Scan     		PDF 2SK1122

    transistor 2SK1120

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII -5 IN D U S T R IA L A P P L IC A T IO N S U n it in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance


    OCR Scan     		PDF 2SK1120 transistor 2SK1120

    2sk1124

    Abstract: YS 150 003
    Text: 2SK1124 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CH O PPER REGULATOR, DC-DC C O NVERTER AND M OTOR Unit in m m D R I V E APPLICATIONS. • L o w Dra i n - S o u r c e O N R e s i s t a n c e : Rjjg(0N)= -022SÎ( T y p .)


    OCR Scan     		PDF 2SK1124 -022SÎ 300yA 2sk1124 YS 150 003

    2SK1123

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1123 2SK1123 IEI-1209) MEI-1202 TEA-1035

    2SK1120 DATA

    Abstract: 2SK1120
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 120 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1120) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.


    OCR Scan     		PDF 2SK1120 2SK1120) 2SK112Û 2SK1120 DATA 2SK1120

    Untitled

    Abstract: No abstract text available
    Text: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,


    OCR Scan     		PDF 2SK1123

    2SK1120

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII-5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs| = 4.0S (Typ.)


    OCR Scan     		PDF 2SK1120 -l-50 2SK1120

    Nec AC 160

    Abstract: NEC 12E 2SK1123 MEI-1202 TEA-1035 ScansUX882
    Text: DATA SHEET NEC iN-CHANNEL W MOS i FIELD i EFFECT POWER TRANSISTOR r 2SK1123 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance


    OCR Scan     		PDF 2SK1123 IEI-1209) Nec AC 160 NEC 12E MEI-1202 TEA-1035 ScansUX882

    2SK112

    Abstract: pa 0016 equivalent equivalent transistor c 495 ifn112 NJ132H
    Text: E4 9 -9 7 IF N 1 1 2 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


    OCR Scan     		PDF IFN112 2SK112 IFN112 NJ132H 100nA pa 0016 equivalent equivalent transistor c 495 NJ132H

    2sk112

    Abstract: No abstract text available
    Text: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA


    OCR Scan     		PDF IFN112 2SK112 NJ132H 2sk112

    TEA-1035

    Abstract: No abstract text available
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iN-CHANNEL W MOS i FIELD i EFFECT POWER TRANSISTOR r 2SK1123 SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1123 2SK1123 TEA-1035

    Untitled

    Abstract: No abstract text available
    Text: 2SK1120 TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE tt- M O S I I -5 2 S K 1 120 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS : Rd S(ON) 1 5 .9 M A X -


    OCR Scan     		PDF 2SK1120 max300

    pa 0016 equivalent

    Abstract: 2sk112
    Text: E4 8-94 IFN112 N - C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N S IS T O R LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Vottage - 50 V Continuous Forward Gate Current


    OCR Scan     		PDF IFN112 2SK112 IFN112 NJ132H T0-18 pa 0016 equivalent 2sk112