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    2SD2216 Search Results

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    Panasonic Electronic Components 2SD2216J0L

    TRANS NPN 50V 0.1A SSMINI3
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    DigiKey 2SD2216J0L Digi-Reel 1
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    2SD2216J0L Cut Tape
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    2SD2216J0L Reel
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    Bristol Electronics 2SD2216J0L 2,551
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    Panasonic Electronic Components 2SD2216J-R(TX)

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    Win Source Electronics 2SD2216J-R(TX) 13,605
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    2SD2216 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2216 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD2216 Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2216 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2216 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2216 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2216 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2216G0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50VCEO 100MA SSMINI-3 Original PDF
    2SD2216J Panasonic NPN Transistor Original PDF
    2SD2216J Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD2216J0L Panasonic TRANS NPN LF 50VCEO .1A SS-MINI Original PDF
    2SD2216J0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF 50VCEO .1A SS-MINI Original PDF
    2SD2216JY Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2216L Panasonic NPN Transistor Original PDF
    2SD2216LL Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2216YQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2216YR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2216YS Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD2216 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462 • Package • High forward current transfer ratio hFE


    Original     		2002/95/EC) 2SD2216 2SB1462 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .


    Original     		2SD2216J 2SB1462J PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2216 Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Unit: mm 0.2+0.1 –0.05 3 0.75±0.15 5˚ • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original     		2SD2216 2SB1462 PDF

    2SB1462L

    Abstract: 2SD2216L
    Text: Transistors 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of


    Original     		2SD2216L 2SB1462L 2SB1462L 2SD2216L PDF

    2SB1462G

    Abstract: 2SD2216G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD2216G • Features ue pl d in an c se ed lud pl vi an m m es


    Original     		2002/95/EC) 2SB1462G 2SD2216G 2SB1462G 2SD2216G PDF

    2SB1462

    Abstract: 2SD2216 SC-75
    Text: Transistor 2SB1462 Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to 2SD2216 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing


    Original     		2SB1462 2SD2216 2SB1462 2SD2216 SC-75 PDF

    2SB1462J

    Abstract: 2SD2216J SC-89
    Text: Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 0.375 2 0 to 0.02 (0.50)(0.50) (0.80) 1 0.27±0.02 5˚ 0.70+0.05 –0.03 • High forward current transfer ratio hFE


    Original     		2SD2216J 2SB1462J 2SB1462J 2SD2216J SC-89 PDF

    2SB1462L

    Abstract: 2SD2216L
    Text: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm 0.020±0.010 2 0.80±0.05 3 • Features 4 1 1.00±0.05 0.60±0.05 0.30±0.03 Parameter Symbol Rating Unit Collector-base voltage Emitter open


    Original     		2SB1462L 2SD2216L 2SB1462L 2SD2216L PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02


    Original     		2002/95/EC) 2SD2216J 2SB1462J PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm 0.020±0.010 2 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 3 • Features 4 1 Parameter Symbol Rating Unit Collector-base voltage Emitter open


    Original     		2SD2216L 2SB1462L PDF

    2SB1462J

    Abstract: 2SD2216J
    Text: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 VCBO –60 V VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current


    Original     		2SB1462J 2SD2216J 2SB1462J 2SD2216J PDF

    2SB1462L

    Abstract: 2SD2216L
    Text: Transistors 2SB1462L Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 1.00±0.05 Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		2SB1462L 2SD2216L 2SB1462L 2SD2216L PDF

    2SB1462L

    Abstract: 2SD2216L
    Text: Transistors 2SD2216L Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L Unit: mm M Di ain sc te on na tin nc ue e/ d 0.020±0.010 2 4 1 0.20±0.03 1.00±0.05 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open


    Original     		2SD2216L 2SB1462L 2SB1462L 2SD2216L PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Package • High forward current transfer ratio hFE


    Original     		2002/95/EC) 2SD2216J 2SB1462J PDF

    2SB1462J

    Abstract: 2SD2216J
    Text: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .


    Original     		2SD2216J 2SB1462J 2SB1462J 2SD2216J PDF

    IC4800

    Abstract: 2SB1462J 2SD2216J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Features ue pl d in an c se ed lud pl vi an m m es


    Original     		2002/95/EC) 2SD2216J 2SB1462J IC4800 2SB1462J 2SD2216J PDF

    2SB1462J

    Abstract: 2SD2216J SC-89
    Text: Transistor 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit: mm For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 5˚ Symbol Rating Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage


    Original     		2SD2216J 2SB1462J 2SB1462J 2SD2216J SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High forward current transfer ratio hFE • SS-Mini type package allowing downsizing of the equipment and


    Original     		2SB1462 2SD2216 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216G • Features ■ Package • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and


    Original     		2002/95/EC) 2SB1462G 2SD2216G PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2216L Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB1462L 0.035±0.005 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing


    Original     		2SD2216L 2SB1462L PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE


    Original     		2002/95/EC) 2SB1462J 2SD2216J PDF

    2SB1462L

    Abstract: 2SD2216L
    Text: Transistors 2SB1462L Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD2216L 0.020±0.010 2 0.80±0.05 3 1 4 • High foward current transfer ratio hFE • Mold leadless type package, allowing downsizing and thinning of


    Original     		2SB1462L 2SD2216L 2SB1462L 2SD2216L PDF

    2SB1462

    Abstract: 2SD2216 SC-75
    Text: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 • Absolute Maximum Ratings Ta = 25°C 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High forward current transfer ratio hFE


    Original     		2SB1462 2SD2216 2SB1462 2SD2216 SC-75 PDF

    2SB1446

    Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
    Text: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A


    OCR Scan     		2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632 PDF