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    2SD1260A Search Results

    2SD1260A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1260A Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1260A Panasonic NPN Transistor Darlington Original PDF
    2SD1260A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1260A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1260A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1260A Unknown Cross Reference Datasheet Scan PDF
    2SD1260AP Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1260AQ Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1260AR Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD1260A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)


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    PDF 2002/95/EC) 2SD1260, 2SD1260A 2SB0937, 2SB0937A 2SD1260 2SD1260 2SD1260A

    2SB937

    Abstract: 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A Unit: mm VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A dissipation Ta=25°C


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    PDF 2SD1260, 2SD1260A 2SB937 2SB937A 2SD1260 2SB937A 2SD1260 2SD1260A

    2SB0937

    Abstract: 2SB0937A 2SD1260 2SD1260A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 2SD1260 Symbol Rating Unit VCBO 60 V 2SD1260A 80 Collector-emitter voltage 2SD1260


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    PDF 2002/95/EC) 2SD1260, 2SD1260A 2SD1260 2SB0937 2SB0937A 2SD1260 2SD1260A

    TRANSISTOR 10003

    Abstract: 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SB0937, 2SB0937A 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB0937A 10.0±0.3 Unit: mm –60 V –80 Emitter to base voltage


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    PDF 2SB0937, 2SB0937A 2SB937, 2SB937A) 2SD1260 2SD1260A 2SB0937 TRANSISTOR 10003 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260A

    2SB937

    Abstract: 2SB937A 2SD1260 2SD1260A DSA003716
    Text: Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification and switching Complementary to 2SD1260 and 2SD1260A emitter voltage 2SB937A –60 VCEO –80 10.0±0.3 Unit: mm V Emitter to base voltage VEBO –5


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    PDF 2SB937, 2SB937A 2SD1260 2SD1260A 2SB937 2SB937 2SB937A 2SD1260A DSA003716

    2SD1260

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 (7.6)


    Original
    PDF 2002/95/EC) 2SD1260, 2SD1260A 2SB0937, 2SB0937A 2SD1260 2SD1260 2SD1260A

    2SB0937

    Abstract: 2SB0937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1260 2SD1260A 2 3.0+0.4 –0.2 4.4±0.5 7.6 Parameter 1 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1


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    PDF 2SD1260, 2SD1260A 2SB0937, 2SB0937 2SB0937A 2SD1260 2SD1260A

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB0937 2SB937 and 2SB0937A (2SB937A) VCEO 10.0±0.3 V 80 VEBO 5 V Peak collector current ICP 4 A Collector current


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    PDF 2SD1260, 2SD1260A 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: Power Transistors 2SB0937 2SB937 , 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current


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    PDF 2SB0937 2SB937) 2SB0937A 2SB937A) 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


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    PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    2SB0937

    Abstract: 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm 1.0±0.1 2SB0937 Symbol Rating Unit VCBO −60 V −80 2SB0937A −60 Collector-emitter voltage 2SB0937


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    PDF 2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SB0937 2SB0937A 2SB937 2SB937A 2SD1260 2SD1260A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Rating Unit VCBO −60 V −80 2SB0937A Collector-emitter voltage 2SB0937 (Base open)


    Original
    PDF 2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260, 2SD1260A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) Silicon PNP epitaxial planar type Darlington Unit: mm Symbol Rating Unit VCBO −60 V 2SB0937 −80 2SB0937A −60 VCEO Emitter-base voltage (Collector open)


    Original
    PDF 2002/95/EC) 2SB0937 2SB937) 2SB0937A 2SB937A) 2SD1260, 2SD1260A 2SB0937

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1260, 2SD1260A 2SD1260, 2SD1260A Package Dimensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type • High DC current gain 3.7 max 8.7 max. Power Amplifier Complementary Pair with 2SB937, 2SB937A • Features U m ax. 6.5 max.


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    PDF 2SD1260, 2SD1260A 2SB937, 2SB937A 2SD1260 001bb4cJ

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB937

    Abstract: 2SB937A 2SD12 2SD1260 2SD1260A SAL package panasonic 2SB
    Text: Power Transistors 2 S D 1 2 6 0 , 2SD1260, 2SD12Ó0A 2 S D 1 2 6 0 A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max l.lmax. 8.7 max. 6.5max. I* »I Power A m plifier C om plem enta ry Pair with 2SB937, 2SB 937A _n


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    PDF 2SD1260, 2SD1260A 2SD12 2SB937, 2SD1260 2SD1260A 2SB937 2SB937A SAL package panasonic 2SB

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


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    PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


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    PDF 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908

    2SB902

    Abstract: 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099
    Text: PANASONIC INDL/ELEKiSEMI} 75C I> | b*i35flSM h^>S>7/9 6 | * 2SB902 2SB902 '> ij □ y P N P i l f ^ y y \s~7\s— - y i & / Si P N P Epitaxial Planar —iSiiiH iffl/G eneral Amplifier • 1# M /F e a tu r e s • x. I • 3 L- ? ? ■J)L i •■/ i't&fD'ffiffi VCK sat) A 'tlt'.'o/Low V ,h(SBl)


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    PDF flci31 2SB902 2SB902 2SB938 2SB937 2SB937A 2SB938A 2SD1260 2SD1260A 2SD1261 2SD1261A Scans-00138099

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    2SDI80

    Abstract: 2sc2238 2SD1431 2SC3303 2SC212Q 2sd1855 2SD1877 2SC3257 2SD1212 2SD1409
    Text: - m £ Type No. 2SD 1442 / fé T 2SÖ 1442A fé T 2SD fé T fé T tt 1443 2SD 1443A 2SD 1444 € M anuf. ✓ m h SANYO 2SD1235 2SD1409 2SC27Q3 2SC3303 2SD471 2SD 1446 ^ fé T 2SD 1447 ~ h m 2SD400 2SD B Ü n 2SDÎ802 2SD1802 a 2SD 1450 ^ 2SD 1451 a 2SD 1452


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    PDF 2SD1442 2SD1235 2SD1212 2SD1212 2SD400 2SD553 2SD1444 2SD1445 2SD1445A 2SDI80 2sc2238 2SD1431 2SC3303 2SC212Q 2sd1855 2SD1877 2SC3257 2SD1409