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    2SC2869 Search Results

    2SC2869 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2869 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2869 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2869 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2869 NEC Low Noise Amplifier of VHF & UHF band Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: 2SC2869 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)80m Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original
    PDF 2SC2869

    2SC2869

    Abstract: No abstract text available
    Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION The 2SC2869 is designed fo r Low Noise A m plifier of PACKAGE DIMENSIONS VHF & UHF band. in millimeters inches FEATURES • Low Noise and High Gain NF = 1.2 dB TYP. Ga= 10.5 dB TYP. V Ce = 8 V, lc = 5 mA, f = 1.0 GHz


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    PDF 2SC2869

    2SC2869

    Abstract: No abstract text available
    Text: _PRELIMINARY SPECIFICATION NEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTIO N 2SC2869 The 2SC2869 is designed for Low Noise A m plifier of P A C K A G E D IM ENSIONS V H F & U H F band. in m illim e te rs inches FEATURES • Low Noise and High Gain


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    PDF 2SC2869 2SC2869

    NE21936

    Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
    Text: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de­ signed for small signal amplifier and oscillator applications up


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    PDF QG013T3 r-31- NE219 NE21936 NE21935 equivalent 2SC2367 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711