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    Panasonic Electronic Components 2SC25900Q

    TRANS NPN 120V 0.5A TO126B-A1
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    2SC2590 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2590 Panasonic Silicon NPN Transistor Original PDF
    2SC2590 Panasonic NPN Transistor Original PDF
    2SC2590 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SC2590 Various Russian Datasheets Transistor Original PDF
    2SC2590 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC2590 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2590 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2590 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2590 Unknown Cross Reference Datasheet Scan PDF
    2SC2590 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2590 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2590 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2590 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2590 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2590 Panasonic Silicon NPN Epitaxial Planar Power Transistor Scan PDF
    2SC25900Q Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HF 120VCEO .5A TO-126 Original PDF
    2SC2590P Panasonic Silicon NPN Epitaxial Planar Type Transistors Scan PDF
    2SC2590Q Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SC2590R Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF
    2SC2590R Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

    2SC2590 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1110

    Abstract: 2SC2590
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SA1110 -120V 2SC2590 -300mA; -30mA -150mA; -500mA; 2SA1110 2SC2590

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Powor Transistors 2SA2110 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SC2590 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SA2110 2SC2590 O-126B-A1

    2SC2590

    Abstract: 2SA1110
    Text: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


    Original     		PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110

    2SA1110

    Abstract: 2SC2590
    Text: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2590 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


    Original     		PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1110

    Abstract: 2SC2590
    Text: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1110

    Abstract: 2SC2590
    Text: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		PDF 2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590

    2SA1110

    Abstract: 2SC2590
    Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio


    Original     		PDF 2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590

    2SC2590

    Abstract: 2SA1110
    Text: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT


    Original     		PDF 2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110

    2SA1110

    Abstract: 2SC2590
    Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio


    Original     		PDF 2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590

    2SC2590

    Abstract: No abstract text available
    Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • Excellent collector current IC characteristics of forward current transfer ratio hFE • High transition frequency fT


    Original     		PDF 2SC2590 O-126B 2SC2590

    2SC2590

    Abstract: No abstract text available
    Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d 3.8±0.3 • Excellent collector current IC characteristics of forward current


    Original     		PDF 2SC2590 O-126B 2SC2590

    2SC2590

    Abstract: No abstract text available
    Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio


    Original     		PDF 2SC2590 2SA1110 2SA1110, O-126B 2SC2590

    30ma 40v npn

    Abstract: SEM 200 ic driver IC03a 2SA1110 2SC2590
    Text: Inchange Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT


    Original     		PDF 2SC2590 O-126 2SA1110 150mA 200MHz 30ma 40v npn SEM 200 ic driver IC03a 2SA1110 2SC2590

    2SA2110

    Abstract: 2SA1110 2SC2590 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Powor Transistors 2SA2110 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SC2590 • Package  Extremely satisfactory linearity of the forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SA2110 2SC2590 2SC2590, O-126B-A1 2SA2110 2SA1110 2SC2590 2SA21

    2SC2590

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 ue pl d in an c se ed lud pl vi an m m es si


    Original     		PDF 2002/95/EC) 2SC2590 O-126B 2SC2590

    Untitled

    Abstract: No abstract text available
    Text: 2SC2590S Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)0.5 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.185 h(FE) Max. Current gain.330


    Original     		PDF 2SC2590S Freq200MÃ StyleTO-126 Code3-140

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    2SA1110

    Abstract: 2SC2590
    Text: 2SA1110 P ow er T ransistors 2SA1110 Silicon PNP Epitaxial Planar Type Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SC2590 • Features • Good linearity of DC current gain I i f e • High transition frequency (fT) • 40~60W output driver in complementary pair with 2SC2590


    OCR Scan     		PDF 2SA1110 2SC2590 O-126 2SA1110 2SC2590

    2SC2633

    Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
    Text: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with


    OCR Scan     		PDF 2SA111Q 2SA1110 2SC2590 2SC2590 -99-i-l 100MHz 2SC2633 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216

    2SC2625

    Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
    Text: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)


    OCR Scan     		PDF 01l3Tc 2SC2556 2SC2556A 2SC2558-KA 800MHz 2SC2558-MA 2SC2559-KA 2SC2559-MA 2SC2625 2SC2559 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C

    2SC2590

    Abstract: WJ 3 2SA1110 hlk-2
    Text: Power Transistors 2SC 2590 2SC2590 Silicon NPN Epitaxial Plànar Type • P ackage Dim ensions AF Pow er Am plifier C om plem entary Pair with 2 S A 1 1 1 0 ■ Features • V ery good linearity of DC c u rre n t gain I if e • High transition frequency (f-r)


    OCR Scan     		PDF 2SC2590 2SA1110 2SC2590 WJ 3 2SA1110 hlk-2

    2SC2590

    Abstract: hlk2 2SA1110 HLK-2 100w npn
    Text: Power T ransistors 2SÇ2590 2SC2590 Silicon NPN Epitaxial Planar Type • Package Dimensions AF Power Amplifier Complementary Pair with 2SA1110 ■Features • Very good linearity of DC current gain Iife • High transition frequency (f-r) • Optimum for the driver of 40~100W in complementary pair with


    OCR Scan     		PDF 2SC2590 2SA1110 2SC2590 hlk2 2SA1110 HLK-2 100w npn