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Panasonic Electronic Components 2SA11100Q TRANS PNP 120V 0.5A TO126B-A1
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DigiKey	2SA11100Q	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Orion Fans OA172SAP-11-1TBIP55 AC Fans Axial Fan, 150x172x51mm, 115VAC, 226CFM, 31W, 58dBA, Ball, Terminal, IP55
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Mouser Electronics	OA172SAP-11-1TBIP55		8			1 $51.91 10 $46.95 100 $39.86 1000 $39.86 10000 $39.86	Buy Now
Sanken Electric Co Ltd 2SA1116 TRANSISTOR,BJT,PNP,200V V(BR)CEO,15A I(C),TO-3
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Quest Components	2SA1116		80			1 $20.8728 10 $20.8728 100 $16.2344 1000 $16.2344 10000 $16.2344	Buy Now

2SA111 Datasheets (99)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA111	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SA111	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA111	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SA111	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA111	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA111	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA111	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1110	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SA1110	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1110	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SA1110	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1110	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1110	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1110	Unknown	The Japanese Transistor Manual 1981	Scan	PDF

2SA1110	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1110	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SA1110	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1110	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1110	Unknown	Transistor Replacements	Scan	PDF
2SA1110	Panasonic	SI PNP EPITAXIAL PLANAR	Scan	PDF

2SA111 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC2591 Abstract: 2SC2592 Text: Inchange Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1111/1112 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application	Original	PDF	2SC2591 2SC2592 O-220 2SA1111/1112 O-220) 2SC2591 500mA 2SC2592
2SA1112 Abstract: 2Sa1111 Text: Inchange Semiconductor Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application	Original	PDF	2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112
2Sa1111 Abstract: 2SA1112 Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application	Original	PDF	2SA1111 2SA1112 O-220 2SC2591/2592 O-220) 2SA1111 -120V; 2SA1112
2SA1111 Abstract: 2SC2591 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 APPLICATIONS ·Designed for audio frequency drivers and high power	Original	PDF	2SA1111 -150V 2SC2591 -500mA; -50mA -150mA; 2SA1111 2SC2591
2SA1110 Abstract: 2SC2590 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.	Original	PDF	2SA1110 -120V 2SC2590 -300mA; -30mA -150mA; -500mA; 2SA1110 2SC2590
Untitled Abstract: No abstract text available Text: Jei5.su , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1112 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo=-180V(Min) • Good Linearity of MFE	Original	PDF	2SA1112 -180V 2SC2592 O-220C -100u -500mA; -50mA -50rnA
2SC2590 Abstract: 2SA1110 Text: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT	Original	PDF	2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110
2SA1110 Abstract: 2SC2590 Text: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2590 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT	Original	PDF	2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590
2SA1117 Abstract: 2sa111 Text: Inchange Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1	Original	PDF	2SA1117 -50mA -200V; 2SA1117 2sa111
2SA1110 Abstract: 2SC2590 Text: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT	Original	PDF	2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590
2SA1110 Abstract: 2SC2590 Text: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT	Original	PDF	2SA1110 O-126 2SC2590 -30mA -150mA -50mA 2SA1110 2SC2590
2SA1110 Abstract: 2SC2590 Text: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio	Original	PDF	2SC2590 2SA1110 2SA1110, O-126B 2SA1110 2SC2590
2SC2590 Abstract: 2SA1110 Text: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT	Original	PDF	2SC2590 O-126 2SA1110 150mA 200MHz 2SC2590 2SA1110
2SA1117 Abstract: "SILICON GENERAL" PACKAGE OUTLINE Text: SavantIC Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1	Original	PDF	2SA1117 -50mA -200V; 2SA1117 "SILICON GENERAL" PACKAGE OUTLINE

2SC2608 Abstract: 2SA1117 pnp 200v 5a switching times Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 APPLICATIONS ·Designed for general purpose applications.	Original	PDF	2SA1117 -200V 2SC2608 -50mA; -200V; 2SC2608 2SA1117 pnp 200v 5a switching times
2SA1112 Abstract: 2sc2592 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 APPLICATIONS ·Designed for audio frequency drivers and high power	Original	PDF	2SA1112 -180V 2SC2592 -500mA; -50mA -150mA; 2SA1112 2sc2592
2SC2607 Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.	Original	PDF	2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
2SA1111 Abstract: 2SA1112 Text: AOK AOK Semiconductor Product Specification 2SA1111 2SA1112 S ilicon PNP P o w er Transistors D E S C R IP T IO N • W ith T O -2 2 0 package • C o m p lem en t to type 2 S C 2 5 9 1 /2 5 9 2 • G ood linearity of hFE • H igh V ceo A P P L IC A T IO N S	OCR Scan	PDF	2SA1111 2SA1112 T0-220 2SC2591/2592 O-220) 2SA1112
2SA1110 Abstract: 2SC2590 Text: 2SA1110 P ow er T ransistors 2SA1110 Silicon PNP Epitaxial Planar Type Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SC2590 • Features • Good linearity of DC current gain I i f e • High transition frequency (fT) • 40~60W output driver in complementary pair with 2SC2590	OCR Scan	PDF	2SA1110 2SC2590 O-126 2SA1110 2SC2590
2SA1111 Abstract: 2SA1112 2SC2591 2sc2592 fr 3702 Text: Power T ransistors 2SA1111, 2SA1112 2SA1111, 2SA1112 Silicon PNP Epitaxial Planar Type Package Dimensions ÂF Drivers, High Power Amplifiers Complementary Pair with 2SC2591, 2SC2592 •Features Unit ! mm 10.5 ± 0-5 £ 4.8max. 9.8max. 1.5max. Om U ev*’7‘ 7.6m in.	OCR Scan	PDF	2SA1111, 2SA1112 2SC2591, 2SC2592 0-100W 2SA1111 2SA1112 2SC2591 2sc2592 fr 3702
2SC2633 Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216 Text: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D \| bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with	OCR Scan	PDF	2SA111Q 2SA1110 2SC2590 2SC2590 -99-i-l 100MHz 2SC2633 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
2SA1301 TOSHIBA Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782 Text: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207	OCR Scan	PDF	2SA1415 2SA1782 2SA1048 2SA1127 SA1299 2SA933S 2SA104S 2SA1337 SA112 2SA1301 TOSHIBA da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646
2SB1545 Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709 Text: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970	OCR Scan	PDF	2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
2SA1115 Abstract: 2SA1115 F 2SA1115 G 2SA1115 E 2sa1115 transistor Silicon PNP epitaxial Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1115 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1115 is a silicon PNP epitaxial type transistor designed tor low OUTLINE DRAWING Unft:mm 4.3MAX frequency voltage amplify application. Small package for easy mounting.	OCR Scan	PDF	2SA1115 2SA1115 -100mA, -10mA) f-270Hz 270Hz X10-3 2SA1115 F 2SA1115 G 2SA1115 E 2sa1115 transistor Silicon PNP epitaxial

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2SA111 Search Results

2SA111 Price and Stock

Panasonic Electronic Components 2SA11100Q

Orion Fans OA172SAP-11-1TBIP55

Sanken Electric Co Ltd 2SA1116

2SA111 Datasheets (99)

2SA111 Datasheets Context Search

2SC2591

2SA1112

2Sa1111

2SA1111

2SA1110

Untitled

2SC2590

2SA1110

2SA1117

2SA1110

2SA1110

2SA1110

2SC2590

2SA1117

2SC2608

2SA1112

2SC2607

2SA1111

2SA1110

2SA1111

2SC2633

2SA1301 TOSHIBA

2SB1545

2SA1115