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    2SB551 Search Results

    2SB551 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB551 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB551 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB551 Unknown Cross Reference Datasheet Scan PDF
    2SB551 Unknown Silicon PNP Triple Diffuesd Transistor, Low Freq. Power Amp Scan PDF
    2SB551 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB551 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB551 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB551 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB551H Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB551H Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB551H Unknown Silicon PNP Triple Diffuesd Transistor, Low Freq. Power Amp Scan PDF
    2SB551H Unknown Shortform Transistor Datasheet Guide Short Form PDF

    2SB551 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB551

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB551 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2


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    2SB551 -10mA; 2SB551 PDF

    2SB551

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB551 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.2V(Typ.)@IC= -2A ·High Power Dissipation: PC= 25W(Max)@TC=55℃ APPLICATIONS ·Designed for low frequency power amplifier applications.


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    2SB551 2SB551 PDF

    2SB528

    Abstract: 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SB502 -110 -8 -3A 2SB502A -110 -10 -3A 2SB503 -70 -8 -3A 2SB503A -80 -10 -3A 2SB504 2SB504A -80 -100 -10 -2A -10 -2A 2SB505 -80 -10 -2A 2SB506 -150 -7 -5A 2SB506A -150 -7 -5A


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    2SB502 2SB502A 2SB503 2SB503A 2SB504 2SB504A 2SB505 2SB506 2SB506A 2SB507 2SB528 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539 PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 PDF

    2SC834

    Abstract: 2sc879 2SC869 2SC882 2SC871 2SC880 2SC895 2SC897 2SC869 DATASHEET 2SC856
    Text: Electrical characteristics Ta=25ºC DC Current Gain Tj fab/ft* Cob ºñ°í hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Absolutes maximum ratings (Ta=25ºC) PartNumber VCBO VEBO Ic (V) 2SC801 (V) Pc (mA) (mW) 75 5 500 2SC802 2SC803 2SC804 2SC805 2SC805A 60 60 15


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    2SC801 2SC802 2SC803 2SC804 2SC805 2SC805A 2SC806 2SC806A 2SC807 2SC807A 2SC834 2sc879 2SC869 2SC882 2SC871 2SC880 2SC895 2SC897 2SC869 DATASHEET 2SC856 PDF

    2SC830

    Abstract: JE33 2SB551
    Text: 2SB551H y ' - ì> PNP 2SC 830 _ t =1 > 7 U SILIC O N PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER Complementary pair w ith 2 S C 8 3 0 ® * > $ 'J B.Omax. 10.0 ± 0.5 -1.8max. 1.6typ) 1. •< — X : B ase 2 . x î •/9 • E m itte r 3 . 3 1 - ^ : C o lle c to r


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    2SB551H 2SB551 2SC830 Te-25 2SB551® 2SB55K0) 2SC830 JE33 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF