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    2SB370A Search Results

    2SB370A Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB370A Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB370A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB370A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB370A Unknown Cross Reference Datasheet Scan PDF
    2SB370A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB370A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB370A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB370A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB370A Unknown Vintage Transistor Datasheets Scan PDF
    2SB370A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB370A Renesas Technology Ge PNP Alloyed Junction Transistor Scan PDF
    2SB370AAH Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB370AH Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB370AH Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB370AH Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB370AH Unknown Shortform Transistor Datasheet Guide Short Form PDF

    2SB370A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2SB370AH Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)32â V(BR)CBO (V)32 I(C) Max. (A)500 Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.


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    PDF 2SB370AH

    Untitled

    Abstract: No abstract text available
    Text: 2SB370A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)32â V(BR)CBO (V)32 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.


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    PDF 2SB370A

    2SB187

    Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
    Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150


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    PDF 2SD101 2SD102 2SD103 2SD104 2SD105 2SD106 2SD107 2SD108 2SD109 2SD110 2SB187 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105

    2sb341

    Abstract: 2SB331 2SB400 2SB328 2SB337 2SB383 2SB382 2SB381 st6220 programmer 2SB367 2SB324
    Text: Absolutes maximum ratings Electrical characteristics Ta=25ºC (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 35W 2SB301 -60 -1 75 60 -1.5 -5A 10A (Tc=25ºC) 2SB302 -10 -5 -2 40 85


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    PDF 2SB301 2SB302 2SB303 2SB304 2SB304A 2SB306 2SB309 2SB310 2SB311 2SB312 2sb341 2SB331 2SB400 2SB328 2SB337 2SB383 2SB382 2SB381 st6220 programmer 2SB367 2SB324

    2SB77

    Abstract: re 10019 2SB370 hitachi 2SB77 D1E THERMISTOR 2SB77 Hitachi 2sb77 d 2SB77 C PNP power transistors by hitachi 2SB370A
    Text: 2SB37 2SB37 HITACHI TRANSISTORS -FO R AUDIO FREQUENCY OUTPUT AMPLIFIER USE The Hitachi 2SB370 and 2SB370A are germanium PNP alloyed junction type transistors, intended for use as audio frequency output stage ampli­ fiers, with such features as relatively large allowable collector dissipation


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    PDF 2SB370 2SB370A CS-E160 2SB77 re 10019 hitachi 2SB77 D1E THERMISTOR 2SB77 Hitachi 2sb77 d 2SB77 C PNP power transistors by hitachi

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2N25

    Abstract: ge 142 2SB450 GET113 2SA244 AC139/AC142 2SB450A ASY82 SFT121 SFT142
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N25 ge 142 2SB450 GET113 2SA244 AC139/AC142 2SB450A ASY82 SFT121 SFT142

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    ge 142

    Abstract: 2sc180 2G140 2SA244 ASY82 2SB450 2SB450A SFT121 SFT142 SFT151
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 ge 142 2sc180 2G140 2SA244 ASY82 2SB450 2SB450A SFT121 SFT142 SFT151

    2SB618A

    Abstract: TRANSISTOR 2Sb617a 2SD78A TRANSISTOR 318a 2SB617a 2sb618 226B 2SB370A 2SB512A 2SB513A
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2SB539B 2SB617A 2SB618A TRANSISTOR 2Sb617a 2SD78A TRANSISTOR 318a 2sb618 226B 2SB370A 2SB512A 2SB513A

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    GET113

    Abstract: GET102 TK30C 2G402 2SA244 A 14U TK28 transistor 2n110 SF-T123 TK45C
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF AC138H AC142H 2SB330 SFT244 SFT245 GET113 GET102 TK30C 2G402 2SA244 A 14U TK28 transistor 2n110 SF-T123 TK45C

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


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    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


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    PDF 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278