Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB153 Search Results

    SF Impression Pixel

    2SB153 Price and Stock

    Rochester Electronics LLC 2SB1530C-E

    POWER BIPOLAR TRANSISTOR, PNP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1530C-E Bulk 99
    • 1 -
    • 10 -
    • 100 $3.05
    • 1000 $3.05
    • 10000 $3.05
    		Buy Now

    Renesas Electronics Corporation 2SB1530C-E

    2SB1530C-E
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SB1530C-E 2,204 110
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.1125
    • 10000 $3.1125
    		Buy Now
    Rochester Electronics 2SB1530C-E 2,204 1
    • 1 $2.93
    • 10 $2.93
    • 100 $2.75
    • 1000 $2.49
    • 10000 $2.49
    		Buy Now

    Others 2SB1535

    TRANSISTOR,BJT,PNP,100V V(BR)CEO,6A I(C),TO-252VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SB1535 324
    • 1 $7.5
    • 10 $7.5
    • 100 $3.25
    • 1000 $3
    • 10000 $3
    		Buy Now

    2SB153 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB153 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB153 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB153 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB153 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB153 Unknown Cross Reference Datasheet Scan PDF
    2SB153 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB153 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB153 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB153 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB153 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB153 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1530 Hitachi Semiconductor Silicon PNP Transistor Original PDF
    2SB1530 Hitachi Semiconductor Silicon PNP Triple Diffused Original PDF
    2SB1530 Renesas Technology Silicon PNP Triple Diffused Original PDF
    2SB1530 Renesas Technology Silicon PNP Triple Diffused Original PDF
    2SB1530 Renesas Technology Silicon PNP Triple Diffused Original PDF
    2SB1530 Hitachi Semiconductor Power Bipolar Transistors Scan PDF
    2SB1530 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SB1530 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1530 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SB153 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sb1538

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V


    Original     		PDF 2002/95/EC) 2SD2358 2SB1538 2sb1538

    2sb15

    Abstract: 2SB1538 2SD2358
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat): < 0.15 V


    Original     		PDF 2002/95/EC) 2SD2358 2SB1538 2sb15 2SB1538 2SD2358

    2SB1537

    Abstract: 2SD2357 2sb15
    Text: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.4±0.08 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.0–0.20 +0.1 45° 1.0–0.2 ● Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SB1537 2SD2357 2SB1537 2SD2357 2sb15

    2SB1531

    Abstract: 2SD2340 2sb15
    Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm M Di ain sc te on na tin nc ue e/ d 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output


    Original     		PDF 2SB1531 2SD2340 2SB1531 2SD2340 2sb15

    2SB1530

    Abstract: 2SD2337 Hitachi DSA00395
    Text: 2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings Ta = 25°C Item


    Original     		PDF 2SD2337 2SB1530 O-220FM 2SB1530 2SD2337 Hitachi DSA00395

    2SB1537

    Abstract: 2SD2357
    Text: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.


    Original     		PDF 2SB1537 2SD2357 2SB1537 2SD2357

    2SB1531

    Abstract: 2SD2340 1305s
    Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000


    Original     		PDF 2SB1531 2SD2340 2SB1531 2SD2340 1305s

    smd transistor marking 1N

    Abstract: 2SB1539 marking 1N 2sb15
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1539 Features Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


    Original     		PDF 2SB1539 smd transistor marking 1N 2SB1539 marking 1N 2sb15

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings Ta = 25°C Item


    Original     		PDF 2SD2337 2SB1530 O-220FM D-85622 Hitachi DSA00279

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V


    Original     		PDF 2002/95/EC) 2SD2358 2SB1538

    PC120

    Abstract: 2SB1530 2SD2337 2SB153
    Text: 2SD2337 Silicon NPN Triple Diffused Low Frequency High Voltage Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SB1530 Absolute Maximum Ratings Ta = 25°C Item TO-220 FM Symbol Rating Unit ————————————————————–


    Original     		PDF 2SD2337 2SB1530 O-220 PC120 2SB1530 2SD2337 2SB153

    Hitachi DSA001650

    Abstract: No abstract text available
    Text: 2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings Ta = 25°C Item


    Original     		PDF 2SD2337 2SB1530 O-220FM D-85622 Hitachi DSA001650

    2SB1539

    Abstract: 2SD2359
    Text: Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.


    Original     		PDF 2SB1539 2SD2359 2SB1539 2SD2359

    at maga

    Abstract: 2SB1537 2SD2357
    Text: Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC.


    Original     		PDF 2SD2357 2SB1537 200MHz at maga 2SB1537 2SD2357

    2SB1538

    Abstract: 2SD2358
    Text: Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat): < 0.15 V • Allowing supply with the radial taping


    Original     		PDF 2SD2358 2SB1538 2SB1538 2SD2358

    2SB1530

    Abstract: 2SD2337 DSA003645
    Text: 2SD2337 Silicon NPN Triple Diffused ADE-208-929 Z 1st. Edition Sep. 2000 Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SD2337 ADE-208-929 2SB1530 O-220FM 2SB1530 2SD2337 DSA003645

    2SB1531

    Abstract: No abstract text available
    Text: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 10.5±0.5 2.0±0.1 15.0±0.2 20.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000


    Original     		PDF 2SB1531 2SD2340 2SB1531

    Untitled

    Abstract: No abstract text available
    Text: 2SD2337 Silicon NPN Triple Diffused HITACHI Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline T O -2 2 0 F M A In 1 2 1. B a se 2. C o lle c to r 3. E m itte r 2SD2337 Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SD2337 2SB1530 D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SD2337 Silicon NPN Triple Diffused HITACHI Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline T O -2 2 0 F M A 1 2 1. B a s e 2. C o lle c to r 3. E m itte r 2SD2337 Absolute Maximum Ratings Ta = 25 °C


    OCR Scan     		PDF 2SD2337 2SB1530 2SD2337

    2sb1530

    Abstract: No abstract text available
    Text: HITACHI 2SB1530-Silicon PNP Triple Diffused Low Frequency Power Amplifier Color TV Vertical Deflection Output Complementary Pair with 2SD2337 Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO -200 V


    OCR Scan     		PDF 2SB1530--------------Silicon 2SD2337 O-220 2SCI530 2sb1530

    Untitled

    Abstract: No abstract text available
    Text: 2SB1530 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM 1. Base 2. Collector 3. Em itter 2SB1530 Absolute Maximum Ratings Ta = 25 °C Item


    OCR Scan     		PDF 2SB1530 2SD2337 O-220FM 2SB1530

    2sb15

    Abstract: No abstract text available
    Text: 2SB1530 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM 1. Base 2. Collector 3. Em itter 2SB1530 Absolute Maximum Ratings Ta = 25 °C Item


    OCR Scan     		PDF 2SB1530 2SD2337 O-220FM D-85622 2sb15

    Untitled

    Abstract: No abstract text available
    Text: 2SB1530 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM jg | i 1 1 1 2 :3 1. Base 2. Collector 3. Em itter 2SB1530 Absolute Maximum Ratings T a =


    OCR Scan     		PDF 2SB1530 2SD2337 O-220FM

    2SB1535F5

    Abstract: 2SB1535
    Text: h7 > V £ /Transistors 2SB1535F5 Epitaxial Planar PNP Silicon Transistor féüá£S27*0,fÍ/l-o w Freq. Power Amp. • il-JB ^äiS/D im ensions Unit : mm • &J& 1) V ce (sat) 6. 5 + 0. 2 VcE (sat)S—0.6V 5 l + 3- 1 - 00 .- 21 r , i. (lc /lB = -0 .5 5 A /-0 .0 3 A )


    OCR Scan     		PDF 2SB1535FS sc-63 -aoi-ao2-oo6-ai-02 2SB1535F5 2SB1535