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    ROHM Semiconductor 2SB1197KT146Q

    TRANS PNP 32V 0.8A SMT3
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    ROHM Semiconductor 2SB1197KT146R

    TRANS PNP 32V 0.8A SMT3
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    ROHM Semiconductor 2SB1197KFRAT146Q

    Transistor, Aec-Q101, Pnp, -32V, -0.8A; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-32V; Transition Frequency Ft:200Mhz; Power Dissipation Pd:200Mw; Dc Collector Current:-800Ma; Dc Current Gain Hfe:120Hfe; Transistorrohs Compliant: Yes |Rohm 2SB1197KFRAT146Q
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    ROHM Semiconductor 2SB1197K-T146Q

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    2SB1197K Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1197K Kexin Low Frequency Transistor Original PDF
    2SB1197K ROHM Low Frequency Transistor (- 32V, - 0.8A) Original PDF
    2SB1197K Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SB1197K TY Semiconductor Low Frequency Transistor - SOT-23 Original PDF
    2SB1197K Weitron PNP General Purpose Transistors Original PDF
    2SB1197K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1197K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SB1197K ROHM SOT-23, SOT-89 and D-Pak Transistors Scan PDF
    2SB1197KR ROHM Low Frequency Transistor (-32V, -0.8A) Original PDF
    2SB1197KT146Q ROHM TRANSISTOR PNP 32V 0.8A SOT-346 Original PDF
    2SB1197KT146Q ROHM Low Frequency Transistor (-32 V, -0.8 A) Original PDF
    2SB1197KT146R ROHM TRANS PNP 32V 0.8A SOT-346 Original PDF
    2SB1197KT146R ROHM Low Frequency Transistor (-32 V, -0.8 A) Original PDF

    2SB1197K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1197KQ

    Abstract: 2SB1197KR 2SB1197K 2SB1197K-R
    Text: 2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SC-59 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A A L 3 3 MECHANICAL DATA


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    PDF 2SB1197K SC-59 /-50mA) SC-59, 2SB1197K-Q 2SB1197K-R -500mA, -50mA 31-Dec-2010 2SB1197KQ 2SB1197KR 2SB1197K 2SB1197K-R

    2SB1197K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power amplifier z MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


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    PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA -50mA, 100MHz 2SB1197K

    2SB1197K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current


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    PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz

    ahr TRANSISTOR

    Abstract: ahr sot23
    Text: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K


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    PDF 2SB1197K OT-23 A/-50mA) 2SD1781K -100mA -500mA -50mA 100MHZ 062in 300uS ahr TRANSISTOR ahr sot23

    100MHZ

    Abstract: 2SB1197K 2SD1781K VCBO-40V
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


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    PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 2SD1781K= 300uS 100MHZ 2SB1197K 2SD1781K VCBO-40V

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor


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    PDF 2SB1197K 2SD1781K. 96-134-B92)

    Untitled

    Abstract: No abstract text available
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


    Original
    PDF 2SD1781K 500mA 2SB1197K. 96-220-D92)

    2SB1197K

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA


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    PDF OT-23-3L OT-23-3L 2SB1197K -100mA -50mA 100MHz

    2SB1197KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB1197KGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) C (3)


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    PDF 2SB1197KGP -20mA -18mA -16mA -14mA -12mA -10mA 2SB1197KGP

    100MHZ

    Abstract: 2SB1197K 2SD1781K
    Text: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo


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    PDF 2SD1781K 500mA/50mA) 2SB1197K 100mA 500mA -50mA 100MHZ 062in 300uS 2SD1781K= 100MHZ 2SB1197K 2SD1781K

    2SB1197K

    Abstract: No abstract text available
    Text: 2SB1197K PNP 3 2 1 SC-59 V CEO Value -32 -40 -5 -800 200 1.6 625 2SB1197K=AHR -1.0 -50 -50 -20 -4.0 WEITRON http://www.weitron.com.tw -32 -40 -5.0 -0.5 u -0.5 u 2SB1197K ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics


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    PDF 2SB1197K SC-59 2SB1197K -50mAdc) -10Vdc, 100MHz) O197K

    marking 25 SC-59

    Abstract: 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390
    Text: 2SB1197K - 32V, - 0.8A Elektronische Bauelemente Low Frequency Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3. C ollector ƔFEATURES . Low V 2. B as e CE sat . VCE(sat) ” 0.5V (IC / IB = - 0.5A / - 50mA) . I = - 0.8A. . Complements the 2SD1781K.


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    PDF 2SB1197K 2SD1781K. SC-59 SC-59, MIL-STD-202, 100mA 100MHz 01-Jun-2002 marking 25 SC-59 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390

    2SB1197K

    Abstract: 2SD1781K T146
    Text: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2


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    PDF 2SD1781K 2SB1197K. SC-59 2SB1197K 2SD1781K T146

    NPN Transistor 8A

    Abstract: Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor
    Text: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure


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    PDF 2SD1781K 500mA 2SB1197K. 96-220-D92) NPN Transistor 8A Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor

    2SB1197K

    Abstract: 2SD1781K T146
    Text: 2SB1197K Transistors Low Frequency Transistor 32V, 0.8A 2SB1197K zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (3) All terminals have the same dimensions 0.4 +0.1 −0.05 zStructure Epitaxial planar type PNP silicon transistor


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    PDF 2SB1197K SC-59 2SD1781K. 2SB1197K 2SD1781K T146

    Q2SB1197k

    Abstract: 2SB1197K 9962
    Text: SPICE PARAMETER 2SB1197K by ROHM TR Div. * 2SB1197K PNP BJT model * Date: 2006/12/15 .MODEL 2SB1197K PNP + IS=300.00E-15 + BF=238.66 + VAF=100 + IKF=7.9962 + ISE=300.00E-15 + NE=1.8179 + BR=24.969 + VAR=100 + IKR=8.6844 + ISC=20.673E-12 + NC=1.4876 + NK=1.2295


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    PDF 2SB1197K Q2SB1197K 00E-15 673E-12 81E-12 583E-12 21E-12 831E-9 2SB1197K 9962

    Untitled

    Abstract: No abstract text available
    Text: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2


    Original
    PDF 2SD1781K 2SB1197K. SC-59

    Untitled

    Abstract: No abstract text available
    Text: 2SB1197K Transistors Low Frequency Transistor 32V, 0.8A 2SB1197K zExternal dimensions (Unit : mm) 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (3) All terminals have the same dimensions 0.4 +0.1 −0.05 zStructure Epitaxial planar type PNP silicon transistor


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    PDF 2SB1197K SC-59 2SD1781K.

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SB1197K OT-23 -50mA -100mA 100MHz

    marking PB SOT-23

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


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    PDF FM120-M+ 2SB1197KxLT1 OD-123+ FM1200-M+ OD-123H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH marking PB SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor -32V, - 0.8A 2SB1197K •F e a t u r e s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = —0 .5 V (Ic / I b = - 0 . 5 A / - 5 0 m A ) 2) Ic = - 0 . 8 A . 3) C om plem ents the 2 S D 1 7 8 1 K. 0 8 ± 0.1


    OCR Scan
    PDF 2SB1197K 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP.

    Untitled

    Abstract: No abstract text available
    Text: h7 > £ /Transistors 2SB1197K 2 S R 1 1 Q 7 K Epitaxial Planar P N P Silicon Transistor 1£Ji j M ^ lt ilif f l/ L o w Freq. Power Amp. • W fiT f& H / D im e n sio n s U nit: mm 1) VCE (sat) If'Y' cf '-'o VcE (sat)S—0.5V (lc/lB=-0.5A / - 50mA) 2) lc= —800mA T'i>-So


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    PDF 2SB1197K --800mA 800mA

    Untitled

    Abstract: No abstract text available
    Text: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r


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    PDF 2SB1197K SC-59) 2SB1197K; A/-50

    2sb transistor

    Abstract: No abstract text available
    Text: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SB1197K; A H * , where ★ is hFE code • 2SB1197K (SMT3) 1 9 *0 2 0 06 low collector saturation voltage 2 Ic/I b = “ 0.5 A/—50 mA


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    PDF 2SB1197K SC-59) 2SB1197K; 2SB1197K 2sb transistor