2SB0929A Search Results

2SB0929A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SB0929A		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor		Original	PDF
2SB0929A		Panasonic	PNP Transistor		Original	PDF
2SB0929AP		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor		Original	PDF
2SB0929AQ		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor		Original	PDF

2SB0929A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit	Original	2002/95/EC) 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature	Original	2SB0929, 2SB0929A 2SB929, 2SB929A) 2SB0929 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0929 2SB929 and 2SB0929A (2SB929A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage	Original	2SD1252, 2SD1252A 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 1.0±0.1 Parameter Collector-base voltage Emitter open 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win	Original	2SD1252, 2SD1252A 2SB0929, 2SB0929A 2SD1252 2SD1252A	PDF
2SB0929 Abstract: 2SB0929A 2SD1252 2SD1252A Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 3.0+0.4 –0.2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 8.5 (6.0) 1.3 3 Parameter	Original	2SD1252, 2SD1252A 2SB0929, 2SB0929A 2SD1252 2SB0929 2SB0929A 2SD1252 2SD1252A	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SB0929 2SB929 , 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0929A −60 V Collector-emitter voltage 2SB0929 (Base open) 2SB0929A	Original	2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
2SB0929 Abstract: 2SB0929A 2SD1252 2SD1252A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 6.0±0.2 1.0±0.1 10.0±0.3 1.5±0.1 2 3.0+0.4 –0.2	Original	2002/95/EC) 2SD1252, 2SD1252A 2SB0929, 2SB0929A 2SD1252 2SB0929 2SB0929A 2SD1252 2SD1252A	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF