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    2SA179 Search Results

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    2SA179 Price and Stock

    ROHM Semiconductor 2SA1797T100Q

    TRANS PNP 50V 2A MPT3
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    DigiKey 2SA1797T100Q Reel 1,000 1,000
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    2SA1797T100Q Cut Tape 1,000 1
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    2SA1797T100Q Digi-Reel 1,000 1
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    Mouser Electronics 2SA1797T100Q
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    Verical 2SA1797T100Q 900 46
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    Quest Components 2SA1797T100Q 1,772
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    2SA1797T100Q 759
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    Avnet Asia 2SA1797T100Q 24 Weeks 1,000
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    Chip1Stop 2SA1797T100Q Cut Tape 900
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    ROHM Semiconductor 2SA1797T100P

    TRANS PNP 50V 2A MPT3
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    DigiKey 2SA1797T100P Cut Tape 508 1
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    2SA1797T100P Digi-Reel 508 1
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    2SA1797T100P Reel 1,000
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    Mouser Electronics 2SA1797T100P 452
    • 1 $0.74
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    Panasonic Electronic Components 2SA1790JCL

    TRANS PNP 20V 0.03A SSMINI3
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    Panasonic Electronic Components 2SA1790GCL

    RF TRANS PNP 20V 300MHZ SSMINI3
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    Panasonic Electronic Components 2SA1791GRL

    TRANS PNP 50V 0.05A SSMINI3
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    2SA179 Datasheets (101)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1790 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1790 Panasonic PNP Transistor Original PDF
    2SA1790 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1790 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1790 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SA1790 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1790 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1790 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1790 Panasonic Transistor Selection Guide Scan PDF
    2SA1790B Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790B Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790C Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790C Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790GCL Panasonic RF Transistors (BJT), Discrete Semiconductor Products, TRANS PNP 20VCEO 30MA SSMINI-3 Original PDF
    2SA1790J Panasonic Silicon PNP epitaxial planar type Original PDF
    2SA1790JB Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790JC Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790JCL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 20VCEO 30MA SSMINI-3 Original PDF
    2SA1791 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1791 Panasonic PNP Transistor Original PDF

    2SA179 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)


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    PDF 2002/95/EC) 2SA1791J 2SC4656J

    2SA1796

    Abstract: No abstract text available
    Text: SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1796 Case : E-pack TE7T4 Unit : mm -7A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


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    PDF 2SA1796 Satur10-4 2SA1796

    Untitled

    Abstract: No abstract text available
    Text: 2SA1797 / 2SB1443 Transistors Power Transistor −50V, −3A 2SA1797 / 2SB1443 zFeatures 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672.


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    PDF 2SA1797 2SB1443 -50mA. 2SC4672. 2SB1443

    Untitled

    Abstract: No abstract text available
    Text: 2SC4672 Transistors Low Frequency Transistor 50V, 3A 2SC4672 zFeatures 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. zAbsolute maximum ratings (Ta=25°C)


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    PDF 2SC4672 /50mA. 2SA1797. 2SC4672

    2SA179

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G ue pl d in an c se ed lud pl vi an m m es si


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    PDF 2002/95/EC) 2SC4656G 2SA1791G 2SA179

    2sc4672 marking

    Abstract: 2SC4672 MARKING CODE dk 2SA1797 T100 transistor dk 50
    Text: 2SC4672 Transistors Low Frequency Transistor 50V, 2A 2SC4672 zFeatures 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. zAbsolute maximum ratings (Ta=25°C)


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    PDF 2SC4672 /50mA. 2SA1797. A/50mA 100MHz 2sc4672 marking 2SC4672 MARKING CODE dk 2SA1797 T100 transistor dk 50

    2SA1790J

    Abstract: 2SC4626J SC-89
    Text: Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Parameter Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)


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    PDF 2SA1790J 2SC4626J 2SA1790J 2SC4626J SC-89

    2SA1790

    Abstract: 2SC4626 SC-75
    Text: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features Symbol Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)


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    PDF 2SC4626 2SA1790 SC-75 2SA1790 2SC4626 SC-75

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


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    PDF 2SA1790 2SC4626 2SA1790 2SC4626

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


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    PDF 2SA1790 2SC4626 2SA1790 2SC4626

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PRELIMINARY PNP SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * Low saturation voltage. VCE(SAT)=-0.35V(Max) at IC / IB=-1A / -50mA * Excellent DC current gain characteristics *Pb-free plating product number:2SA1797L


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    PDF 2SA1797 -50mA 2SA1797L 2SA1797-x-AA3-R 2SA1797L-x-AA3-R 2SA1797-x-AB3-R 2SA1797L-x-AB3-R 2SA1797-x-TN3-R 2SA1797L-x-TN3-R 2SA1797-x-TN3-T

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob


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    PDF 2002/95/EC) 2SC4656G 2SA1791G

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)


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    PDF 2SC4626 2SA1790

    2SA1791J

    Abstract: 2SC4656J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 5˚ Symbol Rating


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    PDF 2002/95/EC) 2SC4656J 2SA1791J SC-89 2SA1791J 2SC4656J SC-89

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO −30 V Collector-emitter voltage (Base open)


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    PDF 2SA1790 2SC4626

    2sa1793

    Abstract: 2sc4657
    Text: 2SA1793 SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. • • • • Excellent hpE Linearity : hpE 120~400 at V c e = —IV, l£ = —1A Low Collector Saturation Voltage : v CE sat = -0.4V(M ax.) at I c = -3 A , Ib = -0.15A High Power Dissipation : PQ = 1.3W(Ta = 25°C)


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    PDF 2SA1793 2SC4657. --50V, --10mA, 2sa1793 2sc4657

    2SA1792

    Abstract: No abstract text available
    Text: 2SA1792 SILICON PNP EPITAXIAL TYPE U nit in mm STOROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • • 7.2MAX 3.0 £3: Excellent hjrE Linearity : hpE = 100~320 Vç e = —2V, I q = - 1A Low Saturation Voltage : V çE(sat)= —0.5V (Max.) at I q = —8A


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    PDF 2SA1792 2SA1792

    Untitled

    Abstract: No abstract text available
    Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40


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    PDF 2SA1795 2SC4668 STO-220

    Untitled

    Abstract: No abstract text available
    Text: h 7 > V 7. $ / T ransistors 2SA1797 2SA1797 Epitaxial Planer PNP Silicon Transistor f ô ^ J S ^ * iilliffl/L o w Freq. Power Amp. • « il > i0 /D im e n s io n s Unit : mm) 1) VcE (sat) V c e (sat)=—0.35V (Max.) ( lc / lB = - 1 A / - 5 0 m A ) 2) I.6 + 0. I


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    PDF 2SA1797 --50pA 100MHz 07iV3

    e5lc

    Abstract: E3SD
    Text: H S x 7 K 7 . S M D < 7 ) f t : * E I Diagram of the Surface Mounting Devices □n ^ T ype No. / < r7 — h - 7 > ' / Z . $ Application 2SA1795 • DC-DCZ1 > / < - 9 2SA1796 • ? 3 "J — Power T ra n sistor 2SC 4668 2SC 4669 • ï - ÿ K 7 -f 7 • n > 7 - K 7 ' f ?


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    PDF 2SA1795 2SA1796 2SK1194 2SK1195 2SK1672 2SK1533 e5lc E3SD

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    transistor DK ql

    Abstract: TRANSISTOR to92 MARKING CODE DK MARKING HRA
    Text: 2SA1797 / 2SB1443 2SC4672 Transistors P o w er T ra n s is to r — 50V , — 2A 2SA1797 / 2SB1443 I •A b s o lu te maximum ratings (Ta=25t2 ) •F e a tu res 1 ) L o w VcE(sat). (M a x .— 0 .3 5 V a l Ic/ I b= — 1 V /— 5 0 m A ) Parameter Col lector-base voltage


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    PDF 2SA1797 2SB1443 2SC4672 2SB1443 2SC4672. 2SA1797 transistor DK ql TRANSISTOR to92 MARKING CODE DK MARKING HRA

    2SA1794

    Abstract: 2SC4658
    Text: 2SA1794 SILICON PNP EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. • • c.75 -5 -8 -1 1.3 15 150 -5 5 -1 5 0 +{ .25i fi UNIT V V V A A W °C °C 2 .3 ± 0 2 + 0.2 5 0.65-0 15 RATING -1 0 0 -8 0 -7 U 1 MAXIMUM RATINGS Ta = 2 5°C


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    PDF 2SA1794 2SC4658. 2SA1794 2SC4658

    D1F40

    Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
    Text: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A


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    PDF 2SA1796 2SC4668 2SC4669 2SK1194 2SK1672 2SK1533 2SK1195 D1F10 D2F10 D1F20 D1F40 S1ZB40 200v 10A mosfet diode 2f DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68