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    2SA131 Search Results

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    2SA131 Price and Stock

    Toshiba America Electronic Components 2SA1313-Y,LF

    TRANS PNP 50V 0.5A SMINI
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    DigiKey 2SA1313-Y,LF Digi-Reel 7,752 1
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    2SA1313-Y,LF Cut Tape 7,752 1
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    2SA1313-Y,LF Reel 3,000 3,000
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    Avnet Americas 2SA1313-Y,LF Reel 9,000 20 Weeks 3,000
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    Mouser Electronics 2SA1313-Y,LF 12,465
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    Arrow Electronics 2SA1313-Y,LF 5 1
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    Quest Components 2SA1313-Y,LF 1,572
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    Rochester Electronics LLC 2SA1318S-AA

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    DigiKey 2SA1318S-AA Bulk 11,539
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    Rochester Electronics LLC 2SA1319S-AA

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    DigiKey 2SA1319S-AA Bulk 2,664
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    Toshiba America Electronic Components 2SA1312GRTE85LF

    TRANS PNP 120V 0.1A SMINI
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    DigiKey 2SA1312GRTE85LF Cut Tape 1
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    2SA1312GRTE85LF Digi-Reel 1
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    2SA1312GRTE85LF Reel 3,000
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    Toshiba America Electronic Components 2SA1315-Y,HOF(M

    TRANS PNP 80V 2A TO92MOD
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    2SA131 Datasheets (196)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA131 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA131 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA131 Unknown Cross Reference Datasheet Scan PDF
    2SA131 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA131 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA131 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA131 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA131 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1310 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1310 Panasonic PNP Transistor Original PDF
    2SA1310 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1310 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1310 Unknown Cross Reference Datasheet Scan PDF
    2SA1310 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1310 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1310 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1310 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1310 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1310R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1310R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    ...

    2SA131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = -1 V, IC = −4 A)


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    PDF 2SA1314 2SC2982

    smd transistor 2A

    Abstract: smd transistor MARKING 2A 2SA1314 2SC2982
    Text: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter


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    PDF 2SA1314 -50mA) 2SC2982 -10mA -50mA smd transistor 2A smd transistor MARKING 2A 2SA1314 2SC2982

    Untitled

    Abstract: No abstract text available
    Text: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •


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    PDF 2SA1312 2SC3324

    2SC3312

    Abstract: 2SA1310 IC1006
    Text: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


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    PDF 2SC3312 2SA1310 2SC3312 2SA1310 IC1006

    marking ACY

    Abstract: marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1313 SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. z High Voltage :VCEO=-50V(Min) z Complements the 2SC3325.


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    PDF OT-23-3L 2SA1313 OT-23-3L 400mA. 2SC3325. -100A -100mA -400mA -100mA -10mA marking ACY marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5


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    PDF 2002/95/EC) 2SA1310 2SC3312 15nteed

    2SA1314

    Abstract: 2SC2982
    Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = −1 V, IC = −4 A)


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    PDF 2SA1314 2SC2982 2SA1314 2SC2982

    2SC3312

    Abstract: 2SC331 2SA1310
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Optimum for high-density mounting


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    PDF 2002/95/EC) 2SC3312 2SA1310 2SC3312 2SC331 2SA1310

    2SA1313

    Abstract: 2SC3325 2sA13133
    Text: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


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    PDF 2SA1313 2SC3325 2SA1313 2SC3325 2sA13133

    2SA1315

    Abstract: 2SC3328 A1315
    Text: 2SA1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


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    PDF 2SA1315 2SC3328 O-92MOD 2SA1315 2SC3328 A1315

    Untitled

    Abstract: No abstract text available
    Text: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = -1 V, IC = −4 A)


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    PDF 2SA1314 2SC2982

    Untitled

    Abstract: No abstract text available
    Text: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original
    PDF 2SA1313 2SC3325 O-236MOD SC-59

    2SA1313

    Abstract: 2SC3325
    Text: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original
    PDF 2SA1313 2SC3325 2SA1313 2SC3325

    2SA1310

    Abstract: 2SC3312
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5


    Original
    PDF 2002/95/EC) 2SC3312 2SA1310 2SA1310 2SC3312

    Untitled

    Abstract: No abstract text available
    Text: 2SA1318S Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.140 h(FE) Max. Current gain.280


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    PDF 2SA1318S Freq200M

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1317 TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z Large Current Capacity and Wide ASO 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


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    PDF O-92S 2SA1317 -100mA -10mA

    u560100

    Abstract: 2SA1318 2sc3331 transistor 2SC3331 2sa131
    Text: Ordering number: EN 16 00A 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors A F Am p Applications M, ,ár%& Use . Capable of being used in the low frequenoy to high frequency range. Features ♦ Large current oapaeity and wide ASO. : 2SA1318


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    PDF 2SA1318/2SC3331 2SA1318 u560100 2sc3331 transistor 2SC3331 2sa131

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1314 2 S A 1 314 TO S H IB A TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER APPLICATIONS 1.6M AX. 4.6MAX. — J- - 1.7M AX. • High DC Current Gain and Excellent Linearity • Low Saturation Voltage


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    PDF 2SA1314

    2sc3331 transistor

    Abstract: 2SA1318 2SC3331 PJ 431
    Text: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318


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    PDF 2SA1318/2SC3331 2SA1318 2034/2034A SC-43 7tlt17D7b 2sc3331 transistor 2SC3331 PJ 431

    2SA1317

    Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
    Text: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60


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    PDF 2SA1313 2SA1314 2SA1315 2SA1316 SA1317 SA1318 46K/23K 2SC3401 2SA1347 10K/10K 2SA1317 2SA1348 2SC3331 2sc3345 2SC3398 2SA1319

    2SC3330

    Abstract: 2SA1317 2SA131 Sanyo CV
    Text: Ordering number : EN 1 5 9 9 A 2SA1317/2SC3330 N0.1599A i PNP/ NPN Epitaxial Planar SiliconTransistors SA \YO i AF Amp Applications Use . Capable of being used in the low frequency to high freqency range. Features . Large current capacity and wide ASO. : 2SA1317


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    PDF 2SA1317/2SC3330 2SA1317 2034/2034A SC-43 7tlt17D7b 2SC3330 2SA131 Sanyo CV

    2SA1314

    Abstract: A1314 J-21
    Text: 2SA1314 TO SH IBA 2 S A 1 314 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO PO W ER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. 0.4 +0.05 High DC Current Gain and Excellent Linearity • V i t /-•X = 1 A O - R O O ( \ T n - n = _ 1 V


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    PDF 2SA1314 2SA1314 A1314 J-21

    2SA1316

    Abstract: 2SC3329 X10-5
    Text: 2SA1316 TO SHIBA 2 S A 1 316 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS AND RECOM M ENDED FOR THE FIRST STAGES OF MC HEAD AM PLIFIERS . 5.1 M AX. • Very Low Noise in the Region of Low Signal Source Impedance


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    PDF 2SA1316 2SC3329 100MHz 2SA1316 2SC3329 X10-5

    2SA1316

    Abstract: 2SC3329 A131 X10-5
    Text: 2SA1316 TOSHIBA 2 S A 1 316 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS . 5.1 MAX. • • • • Very Low Noise in the Region of Low Signal Source Impedance


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    PDF 2SA1316 2SC3329 2SA1316 2SC3329 A131 X10-5