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    2SA124 Search Results

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    2SA1247-T2B-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
    2SA1247-T1B-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SA124 Price and Stock

    Toshiba America Electronic Components 2SA1244-Y(T6L1,NQ)

    PB-F POWER TRANSISTOR; PW-MOLD;
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    DigiKey 2SA1244-Y(T6L1,NQ) Cut Tape 1,623 1
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    Mouser Electronics 2SA1244-Y(T6L1,NQ) 1,930
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    Verical 2SA1244-Y(T6L1,NQ) 1,605 26
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    Rochester Electronics LLC 2SA1248S

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    Rochester Electronics LLC 2SA1249S

    2SA1249 - TRANSISTOR
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    Rochester Electronics LLC 2SA1246T-AA

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    Toshiba America Electronic Components 2SA1242-Y(Q)

    TRANS PNP 20V 5A PW-MOLD
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    Find more 2SA124 price and stock on Findchips.com

    2SA124 Datasheets (217)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA124 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA124 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA124 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA124 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA124 Unknown Vintage Transistor Datasheets Scan PDF
    2SA124 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA124 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA124 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA124 Unknown Cross Reference Datasheet Scan PDF
    2SA1240 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1240 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1240 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1240 Sanyo Semiconductor DIFFERENTIAL AMP APPLICATIONS Scan PDF
    2SA1240 Sanyo Semiconductor Silicon PNP Epitaxial Planar Composite Transistor Scan PDF
    2SA1240 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SA1240DP6A Sanyo Semiconductor TRANS GP BJT PNP 120V 0.05A 3DP6A Scan PDF
    2SA1240DP6B Sanyo Semiconductor TRANS GP BJT PNP 120V 0.05A 3DP6B Scan PDF
    2SA1240F Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1240F Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    ...

    2SA124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1249

    Abstract: 2SC3117
    Text: JMnic Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SC3117 ・High breakdown voltage ・Large current capacity APPLICATIONS ・For color TV sound output,converters, Inverters applications


    Original     		PDF 2SA1249 O-126 2SC3117 pow500mA; -50mA -120V; -100mA -10mA 2SA1249 2SC3117

    MARKING MD

    Abstract: 2SA1245
    Text: Transistors IC SMD Type Silicon Pnp Epitaxial Planar Type 2SA1245 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


    Original     		PDF 2SA1245 OT-23 -10mA -10mA 500MHz MARKING MD 2SA1245

    2SA1249

    Abstract: 2SA124 500ma 40v pnp *a1249 2SC3117 2sc311
    Text: Inchange Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications


    Original     		PDF 2SA1249 O-126 2SC3117 -120V; -100mA -10mA -50mA 2SA1249 2SA124 500ma 40v pnp *a1249 2SC3117 2sc311

    2SA1242

    Abstract: A1242
    Text: 2SA1242 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 20070701-JA 2SA1242 A1242

    A1242

    Abstract: 2SA1242 transistor A1242
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 A1242 2SA1242 transistor A1242

    2SA1249

    Abstract: 2SC3117
    Text: SavantIC Semiconductor Product Specification 2SA1249 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC3117 ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output,converters, Inverters applications


    Original     		PDF 2SA1249 O-126 2SC3117 -120V; -100mA -10mA -50mA 2SA1249 2SC3117

    c3074

    Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y
    Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244


    Original     		PDF 2SC3074 2SA1244 c3074 Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y

    Untitled

    Abstract: No abstract text available
    Text: Jeiizu ioducti, One, C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1249 DESCRIPTION • High Collector-Emitter Breakdown Voltage: V (B R)CEo=-160V(Min) • Large Current Capacity


    Original     		PDF 2SA1249 -160V 2SC3117 O-126 -50mA -120V; -10mA -50mA;

    2SA124

    Abstract: 2SA1248 2SC3116 ITR03053
    Text: Ordering number:ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009B Features [2SA1248/2SC3116] · High breakdown voltage.


    Original     		PDF ENN1032B 2SA1248/2SC3116 60V/700mA 2009B 2SA1248/2SC3116] 2SA1248 O-126 2SA124 2SA1248 2SC3116 ITR03053

    2N4872

    Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837


    Original     		PDF ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 2N4872 10N60N 2N3304 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258

    transistor A1242

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft
    Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)


    Original     		PDF 2SA1242 transistor A1242 TOSHIBA Transistor Silicon PNP Epitaxial Type Ft

    2SA1248

    Abstract: 2SC3116
    Text: Ordering number:EN1032A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009A Features [2SA1248/2SC3116] · High breakdown voltage.


    Original     		PDF EN1032A 2SA1248/2SC3116 60V/700mA 2SA1248/2SC3116] 20IB1= 20IB2 300mA O-126 2SA1248 2SA1248 2SC3116

    Untitled

    Abstract: No abstract text available
    Text: i TOSHIBA 2SA124A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. &811AX. FEATURES: . Low Collector Saturation Voltage : vCE(sat)*“0.4V(Max.) at Ic*-3A . High Speed Switching Time : tstg=1.0/<s(Typ.)


    OCR Scan     		PDF 2SA124A 811AX. 2SC3074 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SA1244 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process * High Current Switching Applications s rJ- Features CM Ö •H • Low Collector Saturation Voltage " V ce (Sat) = -0.4 V (Max.) at lc = -3A • High Speed Switching Time


    OCR Scan     		PDF 2SA1244 2SC3074

    width10ms

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1242 STROBO FLASH APPLICATIONS. Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX. FEATURES: . hFE=100~ 320 VCe =-2V, Ic =-0.5A . hFE=70(Min.) (Vc e =-2V, Ic=-4A) . Low Collector Saturation Voltage : VcE(sat)=~l-OV(Max.) (Ic=-4A, Ib =-0.1A)


    OCR Scan     		PDF 2SA1242 -10mA, A1242 width10ms

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 TOSHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = -2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = -2 V , IC = -4 A ) Low Collector Saturation Voltage


    OCR Scan     		PDF 2SA1242

    2SA1241

    Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
    Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )


    OCR Scan     		PDF 2SA1241) 2SA1241 2SC3076 2SA1241 V10Urns a1241 A 1241 transistor 2sa1241 1241 transistor

    2SA1244

    Abstract: No abstract text available
    Text: 2SA1244 TO SHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1244 HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = - 0 .4 V (Max.) at I q = - 3 A • High Speed Switching Time : tstg = 1.0 /¿s (Typ.)


    OCR Scan     		PDF 2SA1244 2SC3074 961001EAA2 2SA1244

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN1060B I s a m y o i 2SA1249/2SC3117 NO.1060B P N P /N P N E p ita x ial P la n a r Silicon T ran sisto rs 160V/1.5A Switching Applications I U ses • Color TV sound ou tput, converters, in v e rters F e a tu r e s - H igh breakdow n voltage


    OCR Scan     		PDF EN1060B 2SA1249/2SC3117 1060B 60V/1 2SA1249 O-126 4078TA/3187AT/D222KI

    2SA1247

    Abstract: 2SC3115 Gv-80
    Text: NEC Y S ilico n T ra n s is to r '> ‘J =3 > m = F = r i\ r x 2SA1247 P # N P b i + ! mm « OiB, ISffiXr 1 / i « 3 y h n —; u r >*7— T v-?<r> m ìa i t lT s a -c -fo o aitl±, /J'#!:, B hFEt£<T)X’MiàfS?â*5c#14io t <"ti tz r -i -f-1 •v9u> : -120


    OCR Scan     		PDF 2SA1247 2SC31151 2SA1247 2SC3115 Gv-80

    transistor a1241

    Abstract: a1241 transistor 2sa1241 2SA1241 2SC3076 IC 1029
    Text: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan     		PDF 2SA1241 2SC3076 2SA124transportation transistor a1241 a1241 transistor 2sa1241 2SA1241 IC 1029

    A1244

    Abstract: 2SA1244 2SC3074
    Text: 2SA1244 TO SH IBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at I q = - 3 A High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SA1244 2SC3074 A1244 2SA1244

    transistor a1241

    Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076
    Text: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan     		PDF 2SA1241 2SC3076 transistor a1241 a1241 a1241 semiconductor 2SA1241

    2SA1241

    Abstract: 2SC3076
    Text: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)


    OCR Scan     		PDF 2SA1241 2SC3076 961001EAA1 2SA1241