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    2SA1015 TRANSISTOR Search Results

    2SA1015 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1015 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1815

    Abstract: 2sa1015 toshiba
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) •


    Original     		PDF 2SA1015 2SC1815. 2SC1815 2sa1015 toshiba

    2sa1015

    Abstract: 2SC1815 ma2580 toshiba 2sa1015
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) •


    Original     		PDF 2SA1015 2SC1815. 2sa1015 2SC1815 ma2580 toshiba 2sa1015

    2sa1015

    Abstract: 2sa1015 datasheet 2sa1015 equivalent 2SC1815 2Sa1015 toshiba
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) ·


    Original     		PDF 2SA1015 2SC1815. 2sa1015 2sa1015 datasheet 2sa1015 equivalent 2SC1815 2Sa1015 toshiba

    transistor 2sa1015y

    Abstract: 2sa1015 2SA1015Y 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR A1015 GR
    Text: MCC TM Micro Commercial Components 2SA1015 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 100uAdc, 50Vdc, transistor 2sa1015y 2SA1015Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR A1015 GR

    2SA1015

    Abstract: 2SC1815 data 2sa1015
    Text: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


    Original     		PDF 2SA1015 2SC1815. 2SA1015 2SC1815 data 2sa1015

    2sa1015

    Abstract: 2sa1015 datasheet 2sa1015 equivalent 2sa1015 transistor 2SA1015L transistor 2sa1015 2SC1815 2SA1015 Toshiba
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


    Original     		PDF 2SA1015 2SC1815 2sa1015 datasheet 2sa1015 equivalent 2sa1015 transistor 2SA1015L transistor 2sa1015 2SC1815 2SA1015 Toshiba

    2sa1015

    Abstract: 2SA1015L 2SC1815 2sa1015 transistor
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


    Original     		PDF 2SA1015 2SC1815 2SA1015L 2SC1815 2sa1015 transistor

    2SC1815

    Abstract: 2SA1015L 2SA1015
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


    Original     		PDF 2SA1015 2SC1815 2SC1815 2SA1015L

    25F1B

    Abstract: 2SC1815 2SA1015L 2SC1815 2SA1015
    Text: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA


    Original     		PDF 2SA1015 2SC1815 25F1B 2SC1815 2SA1015L 2SC1815 2SA1015

    2SA1015

    Abstract: 2sa1015gr 2SA1015 GR 2SA1015-Y A1015 y
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 -100uAdc, 2SA1015 2sa1015gr 2SA1015 GR A1015 y

    2sa1015

    Abstract: 2SA1015-Y 2SA1015 GR 2SA1015 Y 2SA1015GR transistor 2sa1015y 2SA1015Y
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 100uAdc, 2sa1015 2SA1015 GR 2SA1015 Y 2SA1015GR transistor 2sa1015y 2SA1015Y

    A1015 gr

    Abstract: 2sa1015 a1015 transistor 2SA1015 GR transistor 2sa1015y 2SA1015-Y 2SA1015 G 2SA1015 Y 2SA1015GR A1015 TO92
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 A1015 gr 2sa1015 a1015 transistor 2SA1015 GR transistor 2sa1015y 2SA1015 G 2SA1015 Y 2SA1015GR A1015 TO92

    2SA1015

    Abstract: 2SA1015 GR 2SA1015GR A1015
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 100uAdc, 2SA1015 2SA1015 GR 2SA1015GR A1015

    2SA1015

    Abstract: transistor A1015 GR 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 2SA1015 transistor A1015 GR 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR

    transistor 2sa1015y

    Abstract: 2SA1015Y transistor A1015 2sa1015 transistor a1015 transistor A1015 A1015 gr 2sa1015 2sa1015 datasheet PNP 2SA1015GR
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC A1015 transistor 2sa1015y 2SA1015Y transistor A1015 2sa1015 transistor a1015 transistor A1015 A1015 gr 2sa1015 2sa1015 datasheet PNP 2SA1015GR

    2SA1015

    Abstract: 2SA1015 GR 2SA1015GR 2sa1015y
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 -100uAdc, 2SA1015 2SA1015 GR 2SA1015GR 2sa1015y

    2SA1015

    Abstract: 2SA1015 GR 2SA1015GR transistor 2sa1015y transistor 2SA1015
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 2SA1015 2SA1015 GR 2SA1015GR transistor 2sa1015y transistor 2SA1015

    A1015

    Abstract: 2SA1015 2SA1015 GR 2SA1015GR transistor A1015
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015 -100uAdc, 2SA1015 2SA1015 GR 2SA1015GR transistor A1015

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SA1015-O 2SA1015-Y 2SA1015-GR -55OC 125OC A1015

    NF807

    Abstract: 2SA1015
    Text: 2SA1015 PNP SILICON TRANSISTOR TO-92B 2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage


    OCR Scan     		PDF 2SA1015 O-92B 150mA 400mW l00mA 100nA 300ns, 3-430181-fr, NF807 2SA1015

    Untitled

    Abstract: No abstract text available
    Text: 2SA1015 TOSHIBA 2SA1015© TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS LO W NOISE AM PLIFIER APPLICATIONS • High Voltage and High Current : V q E q = _ 50V (Min.), Iq = - 150mA (Max.) Excellent hFE Linearity


    OCR Scan     		PDF 2SA1015Â 150mA 2SC1815Ã Temperatu00 961001EAA2'

    2SA1015

    Abstract: pnp transistor 6V transistor amplifier 5v to 6v 2sa1015 transistor
    Text: Í K . 2SA1015 PNP SILICON '• A Si 1», '^ÊÊRS IS TRANSISTOR TO-92B 2SA1015 is PNP silicon planar transistor designed for 4 audio frequency general purpose amplifier applications and driver stage amplifier applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage


    OCR Scan     		PDF 2SA1015 O-92B 150mA 400mW 100mA Ici100mA 300ns, pnp transistor 6V transistor amplifier 5v to 6v 2sa1015 transistor

    2SA1015

    Abstract: toshiba 2sa1015 2sc1815a 2SC1815
    Text: 2SA1015 TO SH IBA 2SA1015© TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS LOW NOISE AMPLIFIER APPLICATIONS • • • • High Voltage and High Current : V çjeO = - 50V (Min.), 10 = - 150mA (Max.)


    OCR Scan     		PDF 2SA1015Â 150mA 2SC1815Â 2SA1015 toshiba 2sa1015 2sc1815a 2SC1815

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr