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    2N676 Search Results

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    2N676 Price and Stock

    Microchip Technology Inc 2N6768

    MOSFET N-CH 400V 14A TO3
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    Microchip Technology Inc 2N6762

    MOSFET N-CH 500V 4.5A TO204AA
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    Microchip Technology Inc 2N6760

    MOSFET N-CH 400V 5.5A TO204AA
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    Microchip Technology Inc 2N6764T1

    MOSFET N-CH 100V 38A TO3
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    Microchip Technology Inc JAN2N6764

    MOSFET N-CH 100V 38A TO204AE
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    2N676 Datasheets (221)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N676 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N676 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N676 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N676 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6760 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6760 Microsemi N Channel MOSFET; Package: TO-204AA; Original PDF
    2N6760 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V TO-3 Original PDF
    2N6760 Fairchild Semiconductor N-Channel Power MOSFETs, 5.5A, 350V/400V Scan PDF
    2N6760 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. Scan PDF
    2N6760 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6760 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    2N6760 IXYS High Voltage Power MOSFETs Scan PDF
    2N6760 IXYS High Voltage Power MOSFETs Scan PDF
    2N6760 Motorola Switchmode Datasheet Scan PDF
    2N6760 Motorola European Master Selection Guide 1986 Scan PDF
    2N6760 Motorola Power Transistor Selection Guide Scan PDF
    2N6760 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    2N6760 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6760 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6760 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    2N676 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
    Text: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers


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    PDF 2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465

    switching circuit

    Abstract: No abstract text available
    Text:        The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS                     


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    PDF 2N6764 switching circuit

    mosfet to3

    Abstract: irf33 2N6760 IRF330 LE17
    Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available


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    PDF IRF330 2N6760 O-204AA) mosfet to3 irf33 2N6760 LE17

    Untitled

    Abstract: No abstract text available
    Text: IRF350 2N6768 MECHANICAL DATA Dimensions in mm inches 39.95 (1.573) N-CHANNEL POWER MOSFET max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont)


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    PDF IRF350 2N6768 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    PDF MIL-PRF-19500/542 2N6760 O-204AA) T4-LDS-0152

    2N6760

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6760 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    PDF MIL-PRF-19500/542 2N6760 O-204AA) T4-LDS-0152 2N6760

    Untitled

    Abstract: No abstract text available
    Text: 2N676 Transistors Complementary Multi-Chip Composite Trans Pair Number of Devices V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)3.0 P(D) Max. (W)10 h(FE) Min. Current gain.15k h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq


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    PDF 2N676

    Untitled

    Abstract: No abstract text available
    Text: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are


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    PDF 2N6764T1, 2N6766T1, 2N6768T1 2N6770T1 MIL-PRF-19500/543 2N6770T1 O-204AE

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available


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    PDF IRF330 2N6760 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N6764+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)38 I(DM) Max. (A) Pulsed I(D)24 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ


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    PDF 2N6764

    Untitled

    Abstract: No abstract text available
    Text: 2N6762+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D)3.0 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


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    PDF 2N6762

    2N6764

    Abstract: 2N6763 27812
    Text: FAIRCHILD SEMICONDUCTOR A4 DË 3 4 ^ 7 4 3469674 F AIRCHILD SEMICONDUCTOR □□27Û1D 1 J - 84D 2 7 8 1 0 D 2N6763/2N6764 T - *7-/3' N-Channel Power M O SFETs, 38 A, 60 V/100 V' F A IR C H IL D A Schlumberger Company Power And Discrete Division TO-2Q4AE


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    PDF 2N6763/2N6764 2N6764 2N670 2N6763/2N6764 T-39-13 2N6763 27812

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


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    PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    NX DIODE SM

    Abstract: 2N6164 2N6764 q2N6764 MOSF6
    Text: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E


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    PDF 2N6764 2N6764 NX DIODE SM 2N6164 q2N6764 MOSF6

    2N6761

    Abstract: No abstract text available
    Text: 2N 6761 2N6762 23 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Pa ckage T O -2 0 4 A A * 4.0A and 4.5A, 450V - 500V B O T T O M V IE W * rDS on = 1-5fî and 2.o n DRAIN f (FLANGE) SO U R C E * S O A is Power-Dissipation Limited


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    PDF 2N6762 2N6761 2N6761.

    Untitled

    Abstract: No abstract text available
    Text: m 2N6764 \ \ N-CHANNEL POWER MOSFET DESCRIPTION: The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS Id 38 A @ Tc = 25 °C 24 A @ T C= 100 °C V ds 100 V PACKAGE STYLE TO -204A E 1.550 - 39.37 — MAX


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    PDF 2N6764 2N6764 -204A

    Untitled

    Abstract: No abstract text available
    Text: 37E SEMELAB LTD D Ö1331Ö7 dec* «1Q 87 SEMELAB \b 2N 6763 2N6764 /,tao MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I*-1.6 1 i 39.5 APPLICATIONS 20.3 • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS 9.0 12.0 PIN 1-G a te


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    PDF 2N6764 2N6763 LE174JB

    2N6770

    Abstract: 13002 l 2N6769 W10t
    Text: A4 FAIRCHILD SEMICONDUCTOR I 'ÏÜ’I 3 4 ^ 7 4 0DE7Ö25 3 | ~ . . - 2N6769/2N6770 N-Channel Power MOSFETs, 12 A, 450 V /500 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description T-39-13


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    PDF 2N6769/2N6770 T-39-13 2N6769 2N6770 2N6770 2N6769/2N6770 W10TH- 13002 l W10t

    2N6770

    Abstract: 2N6769
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


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    PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


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    PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770 2N6796 O-2I35AF O-205AF 2N6800 2N6770 JANTXV 2N6770 JANTX

    2N6760

    Abstract: 2N6898 2N67 2N6759
    Text: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


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    PDF 2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N6796 O-2I35AF O-205AF 2N6800 2N6898 2N67

    2N6760

    Abstract: MF2400 2N6759 E7A04
    Text: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power


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    PDF 34tTb74 2N6759/2N6760 T-39-11 2N6759 2N6760 2N6760 E7A04 MF2400

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


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    PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    2N6761

    Abstract: 2N6762 2N6767 2nc762
    Text: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi


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    PDF T-39-11 2N6761, 2N6762 2N6761 2N6762 3fi75Dfll 2N6767 2nc762