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    2N5543

    Abstract: 2N5544
    Text: 2flE D TELEDYNE COMPONENTS • ÖWbQa HIGH VOLTAGE OQObSSl 7 2N5S43 2N5544 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 559 FEATURES • HIGH BVDGO> 300V 2N5S43 • LOW CAPACITANCE APPLICATIONS • HIGH VOLTAGE CURRENT SOURCE


    OCR Scan     		PDF 2N5S43 2N5544 2N5S43) 2N5543 2N5544

    TRANSISTOR BC 545

    Abstract: NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643
    Text: MM m tm F?F- Products m M ic m s e m i 140 Commerce Drive Montgomery ville, PÂ 18936' Tel: ,215 631-9840 2N5641 2N5642/2N5643 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS 175MHz • FREQUENCY ■ VOLTAGE 28V TO 40 W • HIGH POWER OUT . HIGH POWER GA!N


    OCR Scan     		PDF 2N5641 2N5642/2N5643 230MHz 175MHz SD120O SDT224 2NS641 SD1222-10 2N5642 2N564 TRANSISTOR BC 545 NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643