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    Microchip Technology Inc 2N5968

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    Microchip Technology Inc 2N5967

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    Microchip Technology Inc 2N5960

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    Microchip Technology Inc 2N5969

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    onsemi 2N5962

    TRANS NPN 45V 0.1A TO92-3
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    2N596 Datasheets (141)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N596 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N596 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N596 Unknown GE Transistor Specifications Scan PDF
    2N596 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N596 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N596 Unknown Vintage Transistor Datasheets Scan PDF
    2N596 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N596 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5960 API Electronics Short form transistor data Short Form PDF
    2N5960 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5960 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5960 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5960 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5960 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5960 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5960 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5960 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N5960 PPC Products Transistor Short Form Data Scan PDF
    2N5960 Semico PNP Silicon Power Transistors / Low Level Amplifiers Scan PDF
    2N5960 Silicon Transistor Industrial Grade Power Transistors Scan PDF
    ...

    2N596 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5744

    Abstract: TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102
    Text: Device Type 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 SDT3104 SDT3850 SDT3851 SDT3852 SDT3875 SDT3876 SDT3877 VCEO V 100 60 100 60 100 100 100 40 60 80 100 40 80 40 40 80 40 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 25/75


    Original     		PDF 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 2N5744 TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102

    2N5967

    Abstract: SDT6436 SDT6437 SDT6438 DSASW0036862
    Text: Device Type 2N5967 SDT6436 SDT6437 SDT6438 VCEO hFE V Min/Max @ IC (A) 100 80 100 120 30/100 40/120 40/120 40/120 15.0 20.0 20.0 20.0 VCE @ IC (A) (sat) Max (V) 1.20 15.0 1.00 20.0 1.00 20.0 1.00 20.0 fT MIN (MHz) PT MAX (W) 10.0 20.0 20.0 20.0 125.0 200.0


    Original     		PDF 2N5967 SDT6436 SDT6437 SDT6438 2N5967 SDT6436 SDT6437 SDT6438 DSASW0036862

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE


    Original     		PDF BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961

    2N5961

    Abstract: 2N5088
    Text: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5961 2N5088 Val60ue 2N5961

    2N5330

    Abstract: 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 SDT6338 SDT6339 SDT6340 SDT6341 SDT8151 SDT8152 SDT8153 SDT8154 SDT8155 SDT8156 SDT8157 SDT8158 SDT8159 SDT8301 SDT8302 SDT8303 SDT8304 SDT44301


    Original     		PDF 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 2N5330 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966

    p20n60

    Abstract: CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 2N1948 2SC733BL PTC139 BC183K BC183KC BC183 BC183C BCl84 ZTX384 2N5963 2N5963 2N5963 PMBT5088 2N718A UPI718A 2SC482


    Original     		PDF BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 p20n60 CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75

    Untitled

    Abstract: No abstract text available
    Text: 2N5962 MMBT5962 C E C TO-92 BE B SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    Original     		PDF 2N5962 MMBT5962 OT-23 2N5088

    Untitled

    Abstract: No abstract text available
    Text: 2N5963 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N5963 Freq150M

    2N5962

    Abstract: MMBT5962 2N5088
    Text: 2N5962 MMBT5962 C E C TO-92 BE B SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    Original     		PDF 2N5962 MMBT5962 OT-23 2N5088 2N5962/ 2N5962 MMBT5962

    2SC1844P

    Abstract: PA6014b SO80G 2SC2784F 2SC100 LOW-POWER SILICON NPN 2sc1844-f 2sc1844 2SC1844F
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 BFR16 MPS2484 2N5961 2N6224 TP5961 TP6224 2S0763 2S0974 BC141-25 BC141-25 t"AbU;J4-10 2N2462 2N2466 BC431-1S 2SC1008 2SC1008 2SC1008 BC487B BC487B18 BC487B5 ~¥~J~lU 25 30 BSX63-1S BSX63-1S EN870 MMCM2484


    Original     		PDF BFR16 MPS2484 2N5961 2N6224 TP5961 TP6224 2S0763 2S0974 BC141-25 2SC1844P PA6014b SO80G 2SC2784F 2SC100 LOW-POWER SILICON NPN 2sc1844-f 2sc1844 2SC1844F

    2N5961

    Abstract: 2N5088 CBVK741B019 F63TNR PN2222N
    Text: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5961 2N5088 Val60ue 2N5961 CBVK741B019 F63TNR PN2222N

    2n60n

    Abstract: 2N6235 2N6078 2N5968 2N5970 2N6032 2N6033 2N6046 2N6215 2N6060
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN SAT . VO LTA GES M ax. h F: E V OLTAGE S NPN 'c 'c CASE VCB V CE V EB V CE (V) (A) M in. Max. (A) !b (A) V CE (V) V BE (V) 2N5968 TO-63/I 100 100 10 10 10 30 120 10 1.5 1.2 2 2N5970 TO-3 80 80


    OCR Scan     		PDF 2N5968 O-63/I 2N5970 2N6032 2N6033 2N6046 2N6047 2N6060 2N6062 2n60n 2N6235 2N6078 2N6215

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR • 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS


    OCR Scan     		PDF 2N5961 2N5088 al60u

    2N5962

    Abstract: 2N5963 2N59 2N5961
    Text: 2N5961 2N5962 2N5963 Central semiconductor Corp. ♦I NPN SILICON TRANSISTOR JEDEC TO-92 CASE EBC 1 4 5 Adam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5961 Series types are Epoxy Molded Silicon NPN Transistors manu­


    OCR Scan     		PDF 2N5961 2N5962 11OOVA 400Hz 100yA 2N5962 2N5963 2N59

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R • 2N5962 MMBT5962 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose am plifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		PDF 2N5962 MMBT5962 2N5088 2N5962/

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ¡m 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. AbSOlUtG Maximum RâtinÇjS


    OCR Scan     		PDF 2N5961 2N5088 Val60ue

    MA550

    Abstract: 2N5088 2N5962 MMBT5962
    Text: S E M IC O N D U C T O R 2N5962 MMBT5962 M a rk : 1 1 7 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general p u rp o se a m p lifie rs re q u irin g c o lle c to r cu rre n ts to 50 mA. Sourced from Process 07. See 2N 5088 for characteristics.


    OCR Scan     		PDF 2N5962 MMBT5962 OT-23 2N5088 MA550 MMBT5962

    2N5968

    Abstract: 2N5967 Solidev Semiconductors Scans-0012430 Solidev
    Text: Sem iconductors Solidev Silicon Power Transistors M A X IM U M O P E R A T IN G A R E A S Silicon N P N /P N P Power Transistors—40 Amp A B S O L U T E M A X IM U M R A T IN G S 2N5967 2N5968 V 100 100 B V CEo (V) 100 100 BV c b o B V ebo (V) 8 10 lc M a x (A )


    OCR Scan     		PDF N5967 2N5968 2N5967 35076D 2N5968 Solidev Semiconductors Scans-0012430 Solidev

    2n5962

    Abstract: 2n596
    Text: SEMICONDUCTOR 2N5962 MMBT5962 SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general p u rp o se a m p lifie rs re q u irin g c o lle c to r c u rre n ts to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		PDF 2N5962/ MMBT5962 2N5962 OT-23 2N5088 2n5962 2n596

    2N5088

    Abstract: 2N5961
    Text: S S E fv llG O fs lO L J C îT Q R 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Màximum RStinQS


    OCR Scan     		PDF 2N5961 2N5088 Val60ue 2N5961

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


    OCR Scan     		PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    bc856 to 92

    Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
    Text: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ


    OCR Scan     		PDF BC546 BC846 O-236* 2N4036 8C556 T0-92 BC856 TN4036 bc856 to 92 bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 2N3859A NATIONAL SEMICONDUCTOR T0-237