Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N5579 Search Results

    2N5579 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5579 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5579 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N5579 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2N5579 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RT3062

    Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 RT3062 BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685

    DTS108

    Abstract: 2n2585 DTS103 DTS106 BUY27
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 DTS108 2n2585 DTS103 DTS106 BUY27

    2N5576

    Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
    Text: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12


    OCR Scan     		PDF diff15 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N5576 MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A

    MHT1810

    Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534

    MP2143

    Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235

    AD166

    Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT


    OCR Scan     		PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    B170008

    Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 B170008 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005

    KL8503

    Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 KL8503 CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package

    2N2128

    Abstract: T4 0660 2N5577 2N5579 MD38
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2N2128 T4 0660 2N5577 2N5579 MD38

    TI3028

    Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 TI3028 TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A

    A400M

    Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 A400M ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438

    2SC102 transistor

    Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2SC102 transistor 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558

    ZT2015

    Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 ZT2015 SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T

    2n3054

    Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
    Text: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include


    OCR Scan     		PDF edi358 TA7557 TA7611 TA7612 TA7639 TA7640 TA7719 TA7739 TA7740 TA7741 2n3054 RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756