2N5302 DATA SHEET Search Results

2N5302 DATA SHEET Result Highlights (5)

Part	Manufacturer	Description	Download
NFMJMPC226R0G3D	Murata Manufacturing Co Ltd	Data Line Filter,
NFM15PC755R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC435R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC915R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
MP-52RJ11SNNE-100	Amphenol Cables on Demand	Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft	Datasheet

2N5302 DATA SHEET Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BU108 Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —	Original	PDF	2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N5301 2N5302 BU108 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent
2N5302 Abstract: 2N5303 MIL-PRF19500 2n5302 transistor Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 October 1999. MIL-PRF-19500/456D 29 July 1999 SUPERSEDING MIL-S-19500/456C 18 November 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER	Original	PDF	MIL-PRF-19500/456D MIL-S-19500/456C 2N5302 2N5303, MIL-PRF-19500. 2N5303 MIL-PRF19500 2n5302 transistor
2N5302 Abstract: 2N5303 jantx 2n5302 Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 June 2009. * MIL-PRF-19500/456E 6 March 2009 SUPERSEDING MIL-PRF-19500/456D 29 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,	Original	PDF	MIL-PRF-19500/456E MIL-PRF-19500/456D 2N5302 2N5303, MIL-PRF-19500. 2N5303 jantx 2n5302
2N5301 Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745 Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS	Original	PDF	2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745
TRANSISTOR 2n5302 Abstract: 2N5302 Text: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc	Original	PDF	2N5302 r14525 2N5302/D TRANSISTOR 2n5302 2N5302
Untitled Abstract: No abstract text available Text: 2N5302 High−Power NPN Silicon Transistor • . . . for use in power amplifier and switching circuits applications. Low Collector−Emitter Saturation Voltage − VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ	Original	PDF	2N5302 2N5302/D
2n5302 transistor Abstract: 2N5302 2N5302G MS5302 Text: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc	Original	PDF	2N5302 2N5302/D 2n5302 transistor 2N5302 2N5302G MS5302
Untitled Abstract: No abstract text available Text: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc	Original	PDF	2N5302 2N5302/D
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	PDF	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
tip122 tip127 audio amp Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power	Original	PDF	MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
2SA1046 Abstract: TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6547  Data Sheet Designer's Switchmode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and	Original	PDF	2N6547 CASE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA1046 TIP147 pwm BU108 TO218 20A Darlington BU326 BU100 MJ423 motorola transistor 2N6547
BD139 time Abstract: ST BDW83C 2n5298 2SC495 BU108 2 N MJE3055 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 transistor MJL21194 2SD382 L Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH150  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers.	Original	PDF	BUH150 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BD139 time ST BDW83C 2n5298 2SC495 BU108 2 N MJE3055 bd135 TRANSISTOR REPLACEMENT GUIDE 2N6022 transistor MJL21194 2SD382 L
BU108 Abstract: 2SA1046 BDX54 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH50  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state–of–art die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications.	Original	PDF	BUH50 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 2SA1046 BDX54 2SB56 BU326 BU100
MJ802 EQUIVALENT Abstract: bd139 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje521 equivalent equivalent buv18a MJL21193 equivalent 2sd880 equivalent mje340 equivalent MJE350 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836  Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors Designer's These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for	Original	PDF	2N6836 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ802 EQUIVALENT bd139 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje521 equivalent equivalent buv18a MJL21193 equivalent 2sd880 equivalent mje340 equivalent MJE350 equivalent

2sd880 equivalent Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852*  Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They	Original	PDF	MJE5850, MJE5851 MJE5852 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sd880 equivalent tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
2SD418 Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,	Original	PDF	MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
bd139 3v Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V	Original	PDF	MJE13009* MJE13009 SILI32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd139 3v transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
motorola 415 D2PAK Abstract: 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2  Data Sheet Designer's High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network	Original	PDF	BUL44D2 BUL44D2 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C motorola 415 D2PAK 2N3055 transistor cross reference BU108 2N5686 726 MOTOROLA TRANSISTORS 2sc15 DIODE 2N4002 transistor 2SC1061 transistor bdx54c
BD127 Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to	Original	PDF	MJE/MJF18206 MJE18206 MJF18206 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD127 transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
EQUIVALENT FOR mjf18004 Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed	Original	PDF	MJE/MJF18004 MJF1832 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C EQUIVALENT FOR mjf18004 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits
2SD436 Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed	Original	PDF	MJE18006 MJF18006 MJE/MJF18006 MJF18006, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2SD436 mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
mje340 equivalent Abstract: 2sd358 equivalent bd139 equivalent transistor BD139 fall time BU108 2SA794 equivalent transistor mj11028 equivalent MJ15025* equivalent NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 c 3198 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16010  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for	Original	PDF	MJ16010 MJ16012 MJW16012 MJW16010 Loa32 TIP73B TIP74 TIP74A TIP74B mje340 equivalent 2sd358 equivalent bd139 equivalent transistor BD139 fall time BU108 2SA794 equivalent transistor mj11028 equivalent MJ15025* equivalent NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 c 3198 transistor
k 3563 Abstract: 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE BUL147* BUL147F* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state–of–the–art die designed	Original	PDF	BUL147/BUL147F BUL147F, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B k 3563 2N6133 equivalent BU108 of ic BD140 2N6407 replacement for TIP147 RCA29 RCA1C03 BUS47AP BD 440 PNP transistors
Untitled Abstract: No abstract text available Text: Microsemi NPN Transistors Part Number JAN2N633S JANS2N6338 JANTX2N6338 JANTXV2N6338 JAN2N6339 JANS2N6339 JANTX2N6339 JANTXV2N6339 JAN2N6340 JANS2N6340 JANTX2N6340 JANTXV2N6340 JAN2N6341 JANS2N6341 JANTX2N6341 JANTXV2N6341 2N6686 2N6687 2N5301 2N5302 2N6326	OCR Scan	PDF	O-120 NPN-21

2N5302 DATA SHEET Search Results

2N5302 DATA SHEET Result Highlights (5)

2N5302 DATA SHEET Datasheets Context Search

BU108

2N5302

2N5302

2N5301

TRANSISTOR 2n5302

Untitled

2n5302 transistor

Untitled

sec tip41c

tip122 tip127 audio amp

2SA1046

BD139 time

BU108

MJ802 EQUIVALENT

2sd880 equivalent

2SD418

bd139 3v

motorola 415 D2PAK

BD127

EQUIVALENT FOR mjf18004

2SD436

mje340 equivalent

k 3563

Untitled