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    2N3919 Search Results

    2N3919 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3919 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
    2N3919 API Electronics NPN Transistors Scan PDF
    2N3919 API Electronics Short form transistor data Short Form PDF
    2N3919 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3919 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3919 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3919 Unknown Vintage Transistor Datasheets Scan PDF
    2N3919 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3919 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3919 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3919 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3919 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3919 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3919 Semico NPN Silicon Power Transistor Selection Guide Scan PDF
    2N3919 Semitronics Silicon Power Transistors Scan PDF
    2N3919 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF

    2N3919 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3919

    Abstract: 2N3919 application notes
    Text: 2N3919 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N3919 O204AA) 31-Jul-02 2N3919 2N3919 application notes

    Untitled

    Abstract: No abstract text available
    Text: 2N3919 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N3919 O204AA) 18-Jun-02

    2N3919

    Abstract: No abstract text available
    Text: 2N3919 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N3919 O204AA) 16-Jul-02 2N3919

    2N3919

    Abstract: No abstract text available
    Text: 2N3919 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)10


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    PDF 2N3919 Freq80M

    D1192

    Abstract: 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66
    Text: POWER SILICON NPN Ie Item Number Part Number I C 5 10 15 20 25 30 40 2S0369Y SOT701S SOT701S SOT701S 2N3920 2N50S4 2SC3255R 2SC3593 2SC3255S Solitron PPC Product PPC Product Sid St Dvcs See Index See Index See Index Mallory Indust Mexi See Index :sanyo Elect


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    PDF OT7A02 OT7B01 OT7602 2N3919 2N3715 PTC116 2S03690 2N5622 D1192 2SC3593 BOT93 diode GG 71 RCA1C07 acrian inc diode 2U 66

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


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    PDF A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907

    2N3920

    Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
    Text: 8134693 S E M ICOA 40 dF | G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658


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    PDF 2N5049 2N3919 2N3920 2N5083 2N5084 2N2812 2H5317 2N5313 2K5552 2N6340 TO61 2N5330 2N5542

    2N3920

    Abstract: 2N5330 TO61 2N2811 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
    Text: 8134693 SEMICOA 4Q dF | ä l B 4 b c13 QQ001S7 S | _ ' P <27-C>» NPN SILICON POWER TRANSISTORS C ont’d Electrical Characteristics @ 2 5 °C Maximum Ratings Device Type N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2811 2N2812 2N5317 2N5313 2N5552 2N561C


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    PDF Q0Q01E7 2N5049 2N3919 2K3920 2N5083 2N5084 2N2811 2N2812 2N5317 2N5313 2N3920 2N5330 TO61

    2N1724A

    Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
    Text: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE


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    PDF 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 2N3488 2N3489 2N3490 2N1724A TO61 2N3442 2N1724 2N1725 2N3773 2N3446

    2N3919c

    Abstract: 2N3445
    Text: COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No C ase 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 TO-66 TO 1 U /I TO111/1 TO lii A TO111/1 2N5346 2N5348 2N5349 VCBO Volts V cEO «“ s Volts VEBO Volts Min Max VCE ic Vc e (sat) Vb e (sat) 1b •QjC "C/W ft


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    PDF 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 O111/1 2N3919c 2N3445

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


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    PDF O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


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    PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2814 JAN

    Abstract: 2n3442 2N1724A 2N2812 TO61 2N1724 2N1725 2N3773 2N3878 2N3879
    Text: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE


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    PDF 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 2N3488 2N3489 2N3490 2N2814 JAN 2n3442 2N1724A 2N2812 TO61 2N1724 2N1725 2N3773

    2N3919c

    Abstract: No abstract text available
    Text: _ 14 EmI M I E L E C T R O N I C S , IN C . COLLECTOR CURRENT = D evice No C ase 2N3878 2N3879 2N5202 2N5326 T O -66 T O -66 T O -66 TOU l/I TO111/1 TO111/1 TO111/1 2N5346 2N5348 2NS349 v CBO Volt8 v CEO <8U8 V olts VEBO Volts Min Max VC E 200 100 100 150


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    PDF 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2NS349 O111/1 2N3919c

    7182N

    Abstract: 2N2856 2n3920 n4877 2N567
    Text: 3 E ìlìilE L E C T R O N IC S . IHC. DEVICE NUMBER INDEX DEVICE NO. 2N1252 2N 1253 2N1506 2N1506A 2 N 17 14 2N1715 2N 1 71 6 2 N 1717 2N 1 71 8 2N 1 71 9 2N 1 7 2 0 2N1721 2N 1724 2N 1 7 2 4 A 2N1725 2N 1 8 8 9 2N1890 2N1974 2 N 1975 2N 2 1 5 0 2N2151 2N 2 6 5 7


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    PDF 2N1252 2N1506 2N1506A 2N1715 2N1721 2N1725 2N1890 2N1974 2N2151 2N2811 7182N 2N2856 2n3920 n4877 2N567

    Untitled

    Abstract: No abstract text available
    Text: _14 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE


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    PDF 2N3878 2N3879 2N5202 2N5326 O111/1 2N5346 2N5348

    Untitled

    Abstract: No abstract text available
    Text: 14 u u u iiELEC TR O N IC S, INC. COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 VCBO VcEO sus Case Volts Volts 50 TO-66 120 75 TO-88 120 SO TO-68 100 80 100 TO111/1 80 TO100 111/1 100 100 TO111/1 100 100


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    PDF 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 O111/1 O111/1