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    2N3715

    Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791
    Text: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715AND2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec


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    PDF 2N3715 2N3716 2N3791/2N3792 2N3715AND2N3792 2N3791 2N3792 2n 3950 2N3792, 3715

    transistor s71

    Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 [email protected]/4 [email protected]/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4


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    PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 transistor s71 2N5671

    2N1489

    Abstract: 2N5686A 2N5929 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 sus VOLTS Ic (max) AMPS VcEO PACKAGE DEVICE TYPE ^FE@ I C/ V ce (min/max @ A/V) VcE(jat) @ (V @ A/A) pr D* WATTS fT (MHz) NPN 2N1487 40 6 [email protected]/4 [email protected]/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4 [email protected]/.3


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    PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 2N5686A 2N5929