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2N06L05 Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS Text: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1	Original	PDF	SPP80N06S2L-05 SPB80N06S2L-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4246 2N06L05 P-TO263-3-2 2N06L05 INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
2N06L05 Abstract: 2N06L SPB80N06S2L-05 SPP80N06S2L-05 SMD MARKING CODE M 4 Diode Text: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P-TO263-3-2 •=175°C operating temperature 55 V 4.5 mΩ 80 A P-TO220-3-1	Original	PDF	SPP80N06S2L-05 SPB80N06S2L-05 P-TO263-3-2 P-TO220-3-1 SPP80N06S2L-05 P-TO220-3-1 Q67040-S4246 2N06L05 SPB80N06S2L-05 P-TO263-3-2 2N06L05 2N06L SMD MARKING CODE M 4 Diode
2n06l05 Abstract: 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 SPP80N06S2L-05 Text: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.5 mΩ ID 80 A • Logic Level • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1	Original	PDF	SPI80N06S2L-05 SPP80N06S2L-05 SPB80N06S2L-05 SPP80N06S2L-05 Q67040-S4246 Q67040-S4256 2N06L05 Q67060-S7422 2n06l05 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05
2n06l05 Abstract: Q67060-S7422 200nC Text: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel RDS on Enhancement mode ID Logic Level P- TO262 -3-1 Avalanche rated max. SMD version P- TO263 -3-2 V 4.5 m 80 A P- TO220 -3-1 dv/dt rated	Original	PDF	SPI80N06S2L-05 SPP80N06S2L-05 SPB80N06S2L-05 SPB80N06S2L-05 Q67040-S4246 Q67040-S4256 Q67060-S7422 2N06L05 Q67060-S7422 200nC
2n06l05 Abstract: SMD CODE G13 IPP80N06S2L-05 2N06 IPB80N06S2L-05 IPI80N06S2L-05 PG-TO263-3-2 Text: IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow	Original	PDF	IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-19004 2N06L05 2n06l05 SMD CODE G13 IPP80N06S2L-05 2N06 IPB80N06S2L-05 IPI80N06S2L-05 PG-TO263-3-2
2N06L05 Abstract: SPB80N06S2L-05 SPP80N06S2L-05 Text: Preliminary data SPP80N06S2L-05 SPB80N06S2L-05 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 4.8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated	Original	PDF	SPP80N06S2L-05 SPB80N06S2L-05 SPP80N06S2L-05 P-TO220-3-1 Q67040-S4246 2N06L05 SPB80N06S2L-05 P-TO263-3-2 Q67040-S4256 2N06L05
2n06l05 Abstract: ANPS071E SPB80N06S2L-05 SPI80N06S2L-05 SPP80N06S2L-05 Text: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated P- TO262 -3-1 VDS 55 RDS on max. SMD version 4.5 m ID 80 A P- TO263 -3-2 Type Package	Original	PDF	SPI80N06S2L-05 SPP80N06S2L-05 SPB80N06S2L-05 SPP80N06S2L-05 Q67040-S4246 2N06L05 Q67040-S4256 2n06l05 ANPS071E SPB80N06S2L-05 SPI80N06S2L-05