CMS3216LAF
Abstract: CMS3216LAG CMS3216LAH
Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3216LAx-75xx
2Mx16)
CMS3216LAF
CMS3216LAG
CMS3216LAH
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K7A323600M
Abstract: K7B321825M-QC65 K7A321800M
Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM Document Title 1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial draft May. 10. 2001 Advance 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary
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K7A323600M
K7A321800M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
K7A3236
165FBGA
K7A323600M
K7B321825M-QC65
K7A321800M
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K7M321825M
Abstract: K7M321825M-QC75 K7M323625M K7M323625M-QC75
Text: K7M323625M K7M321825M 1Mx36 & 2Mx18 Flow-Through NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Preliminary 0.1 1. Add 165FBGA package Aug. 29. 2001 Preliminary
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K7M323625M
K7M321825M
1Mx36
2Mx18
2Mx18-Bit
165FBGA
165FBGA
x18/x36
K7M321825M
K7M321825M-QC75
K7M323625M
K7M323625M-QC75
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K1S3216B1C-FI70
Abstract: K1S3216B1C K1S3216B1C-I
Text: Preliminary K1S3216B1C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0
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K1S3216B1C
2Mx16
100uA
55/Typ.
35/Typ.
K1S3216B1C-FI70
K1S3216B1C
K1S3216B1C-I
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K7M321825M
Abstract: K7M323625M
Text: K7M323625M K7M321825M Preliminary 1Mx36 & 2Mx18 Flow-Through NtRAM TM 1Mx36 & 2Mx18-Bit Flow Through NtRAMTM FEATURES GENERAL DESCRIPTION • 3.3V+0.165V/-0.165V Power Supply. • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O
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K7M323625M
K7M321825M
1Mx36
2Mx18
2Mx18-Bit
65V/-0
100-TQFP-1420A
/119BGA
K7M321825M
K7M323625M
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WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
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MASK ROM 32M PROGRAM
Abstract: K3N6C4000E-DC mask rom A2034
Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)
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K3N6C4000E-DC
32M-Bit
2Mx16)
152x16
100ns
120ns
100pF
42-DIP-600
K3N6C4000E-DC
MASK ROM 32M PROGRAM
mask rom
A2034
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A94-10
Abstract: 4000E
Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V
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4000E-DC
32M-Bit
2Mx16)
152x16
100ns
120ns
100pF
A94-10
4000E
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Untitled
Abstract: No abstract text available
Text: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7P323674C
K7P321874C
1Mx36
2Mx18
119BGA
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Untitled
Abstract: No abstract text available
Text: Advance K1S321615C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark April 18, 2003 Advanced The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K1S321615C
2Mx16
K1S321615C
55/Typ.
35/Typ.
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Untitled
Abstract: No abstract text available
Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O0-31
A0-18
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SAMSUNG MCP
Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
512tRDR
69-Ball
08MAX
SAMSUNG MCP
samsung K5 MCP
BA35
BA4110
ba4410
BA651
Flash Memory SAMSUNG k5
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CMS3216LAF
Abstract: CMS3216LAG CMS3216LAH
Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions
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CMS3216LAx-75Ex
2Mx16)
CMS3216LAF
CMS3216LAG
CMS3216LAH
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Untitled
Abstract: No abstract text available
Text: IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 36Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES • 1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid
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IS61DDP2B22M18A
IS61DDP2B21M36A
2Mx18,
1Mx36
2Mx18
400MHz
333MHz
300MHz
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WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
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WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
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Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323682M
K7Q321882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
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WEDF1M32B-XXX5
Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
Text: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature
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WEDF1M32B-XXX5
1Mx32
120ns
1Mx32,
2Mx16
16KByte
WEDF1M32B-XG2TX5
WEDF1M32B-XHX5
32KByte
WEDF1M32B-XXX5
1m 0880
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jedec ms-024
Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows
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WED416S8030A-SI
2Mx16x
WED416S8030AxxSI
100MHz)
83MHz)
jedec ms-024
MS-024-FA
ms024
WED416S8030A-S
2Mx16bit
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Untitled
Abstract: No abstract text available
Text: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R323684C
K7R321884C
K7R320984C
1Mx36,
2Mx18
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mask rom
Abstract: No abstract text available
Text: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)
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KM23V32005D
TY/KM23S32005D
32M-Bit
/2Mx16)
304x8
152x16
100/30ns
150/50ns
KM23S32005D
mask rom
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Untitled
Abstract: No abstract text available
Text: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)
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KM23V32000D
TY/KM23S32000D
32M-Bit
/2Mx16)
304x8
152x16
100ns
150ns
KM23S32000D
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Untitled
Abstract: No abstract text available
Text: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption
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KM23C32000C
32M-Bit
/2Mx16)
304x8
152x16
100ns
44-TSOP2-400
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F2M1
Abstract: No abstract text available
Text: !. es 2Mx16 5V FLASH MODULE W F 2 M 1 6 -X X X 5 ADVANCED1 FEATURES • Access Time of 9 0 ,1 2 0 ,150ns Low Po w er C M O S ■ Packaging: Data Polling and Toggle Bit feature for detection of program or erase cycle completion. • 66-pin, PGA Type, 1.185 inch square, Herm etic Ceramic
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2Mx16
150ns
66-pin,
F2M1
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Untitled
Abstract: No abstract text available
Text: a WF1M 32B-XXX5 WHITE /MICROELECTRONICS 1Mx325V/12V FLASH MODULE PRELIMINAR/* FEATURES • Access Times of 100,120ns Organized as 1Mx32, user configurable as 2Mx16 or4Mx8. ■ Commercial, Industrial and Military Temperature Ranges Packaging: • 66-pin, PGA Type, 1.185 inch square, Hermetic
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32B-XXX5
1Mx325V/12V
120ns
1Mx32,
2Mx16
V/12V
32B-XG2TX5
32B-XHX5
66-pin,
5/12V)
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