Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)
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V58C2128
DDR400
DDR333
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intel 80196 microcontroller
Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Text: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform
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PSD913F2
PSD934F2
PSD954F2
256Kbit
PQFP52
PLCC52
intel 80196 microcontroller
68HC11
68HC12
68HC16
80C251
J1850
PLCC52
PQFP52
PSD913F2
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Untitled
Abstract: No abstract text available
Text: Preliminary W28F321BT/TT 2MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide
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W28F321BT/TT
32MBIT
W28F321,
W28F321
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W39L020
Abstract: No abstract text available
Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.
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W39L020
W39L020
12-volt
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A25L05PT
Abstract: A25L05PU 25L05P A25L05P A25L10P A25L20P 25L10P
Text: A25L20P/A25L10P/A25L05P Series 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Document Title 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface Revision History History Issue Date
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A25L20P/A25L10P/A25L05P
512Kbit,
85MHz
512Kbit
203mm
A25L05PT
A25L05PU
25L05P
A25L05P
A25L10P
A25L20P
25L10P
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LH28F320BFHE-PBTLF1
Abstract: Flash Memory 32Mbit DQ15DQ0
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 2Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F320BFHE-PBTLF1
32Mbit
2Mbitx16)
LHF32FF1
EL16X114
LH28F320BFHE-PBTLF1
Flash Memory 32Mbit
DQ15DQ0
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V54C3128164VAT
Abstract: No abstract text available
Text: V54C3128164VAT HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 7PC 7 8PC System Frequency fCK 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3128164VAT
143/133/125MHz
V54C3128164VAT
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)
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V58C2128
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)
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V58C2128
DDR400
DDR333
DDR266
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns
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V58C2128
DDR500
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns
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V58C2128
DDR500
DDR400
DDR333
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Untitled
Abstract: No abstract text available
Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash
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LE28DW8163T-80T
xxxx-19/20
xxxx-20/20
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IMCS 700
Abstract: PLCC52 PQFP52 PSD813F2 PSD813F3 PSD813F4 PSD813F5 PSD833F2 PSD834F2 PSD853F2
Text: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5 V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■
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PSD813F2/3/4/5,
PSD833F2
PSD834F2,
PSD853F2,
PSD854F2
256Kbit
PQFP52
PLCC52
IMCS 700
PLCC52
PQFP52
PSD813F2
PSD813F3
PSD813F4
PSD813F5
PSD833F2
PSD834F2
PSD853F2
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V54C3128164VAT
Abstract: V54C3128164 AAY3
Text: V54C3128164VAT HIGH PERFORMANCE 166/143/133/125MHz 3.3 VOLT 8M X 16 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 16 MOSEL VITELIC PRELIMINARY 6 7 75 8PC System Frequency fCK 166 MHz 143 MHz 133 MHz 125 MHz Clock Cycle Time (tCK3 ) 6 7 ns 7.5 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3128164VAT
166/143/133/125MHz
V54C3128164VAT
V54C3128164
AAY3
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DS3077
Abstract: MV1441 MV1442 AMI Semiconductor encoder Digital Alarm Clock 40 pin AMI HDB3 APPLICATION
Text: MV1442 HDB3 Encoder/Decoder/Clock Regenerator DS3077 The MV1442, along with other devices in the Zarlink 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection functions for a 2.048Mbit PCM transmission link operating in
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MV1442
DS3077
MV1442,
048Mbit
MV1442
DS3077
MV1441
AMI Semiconductor encoder
Digital Alarm Clock 40 pin
AMI HDB3 APPLICATION
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V54C365804VC
Abstract: No abstract text available
Text: MOSEL VITELIC V54C365804VC HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8 PRELIMINARY 7 75 8PC 8 System Frequency fCK 143MHz 133MHz 125 MHz 125 MHz Clock Cycle Time (tCK3) 7 ns 7.5 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C365804VC
143MHz
133MHz
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V58C2128 804/404/164 SAT HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (404) 4 BANKS X 8Mbit X 4 (164) MOSEL VITELIC Clock Cycle Time (tCK2) 7 75 8 DDR266A DDR266B DDR200 7.5 ns 10 ns 10 ns 7 ns 7.5 ns
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V58C2128
DDR266A
DDR266B
DDR200
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39LV010
Abstract: 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
Text: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification
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Pm39LV512
Pm39LV010
Pm39LV020
Pm39LV040
Pm39LV512:
Pm39LV010:
Pm39LV020:
Pm39LV040:
Pm39LV512)
39LV010
39lv512
PM39LV010-70VCE
39LV020
pm39lv512-70vce
PM39LV512-70JCE
PM39LV040-70JCE
PM39LV040-70VC
S5580
PM39LV010-70JCE
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M45PE20
Abstract: ST10
Text: M45PE20 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)
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M45PE20
25MHz
4012h)
M45PEthout
M45PE20
ST10
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Untitled
Abstract: No abstract text available
Text: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)
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IS25CD512/010
IS25LD020
512Kbit/1
512Kbit
IS25CD512:
IS25CD010:
IS25LD020:
512Kb
32KByte
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ISC PSD834F2
Abstract: PSDSOFT EXPRESS
Text: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■
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PSD813F2/3/4/5,
PSD833F2
PSD834F2,
PSD853F2,
PSD854F2
52-pin,
256Kbit
PLCC52
PQFP52
ISC PSD834F2
PSDSOFT EXPRESS
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free motion DETECTOR CIRCUIT DIAGRAM
Abstract: motion DETECTOR CIRCUIT DIAGRAM pst5 sine wave pv inverter circuit diagram digital video signal processor IR motion detector MSM518221 QFP100-P-1420-0 TC90A11F toshiba "motion compensation"
Text: TC90A11F TO SHIBA TENTATIVE TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC90A11F MULTI SYSTEM 3DIM . DNR IC FOR VCR TC90A11F is the digital video signal processor, which reduces the noise on the playback video signal of VCR, with the external video memory IC (2Mbit FIFO type).
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TC90A11F
TC90A11F
QFP100-P-1420-0
58MHz,
43MHz)
free motion DETECTOR CIRCUIT DIAGRAM
motion DETECTOR CIRCUIT DIAGRAM
pst5
sine wave pv inverter circuit diagram
digital video signal processor
IR motion detector
MSM518221
toshiba "motion compensation"
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Untitled
Abstract: No abstract text available
Text: w GEC PLE SS EY OCTOBER 1993 S E M I C O N D U C T O R S MV1442 HDB3 ENCODER/DECODER/CLOCK REGENERATOR Supersedes June 1993 edition The MV1442, along with other devices in the GPS 2Mbit PCM signalling series comprise a group of circuits which will perform the common channel signalling and error detection
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MV1442
MV1442,
048Mbit
MV1442
37bfl522
37bfl5EÂ
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PQFP44
Abstract: STLC5432 STLC5432Q PQFP4410X10 8192KB
Text: / = T S G S -TH O M S O N ^ 7 # . [* ^ Â g T ÏÏ!M STLC5432 []© S 2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE PRODUCT PREVIEW ONE CHIP SOLUTION FROM PCM BUS TO TRANSFORMER(CEPT STANDARD ISDN PRIMARY ACCESS CONTROLLER (COMPATIBLE WITH ETSI, OPTION 1 AND 2)
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STLC5432
ST5451/MK50H25/MK5027
372fl
16384KHz
PQFP44
STLC5432
STLC5432Q
PQFP4410X10
8192KB
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