Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2218 Search Results

    2SK2218 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2sk2218 Sanyo Semiconductor N-channel junction silicon FET, high-frequency, low-noise amp application Original PDF
    2SK2218 Sanyo Semiconductor High-Frequency Low-Noise Amplifier Applications Original PDF
    2SK2218 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2218 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SK2218 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK22183 Sanyo Semiconductor TRANS JFET N-CH 15V 52A 3PCP Original PDF
    2SK22184 Sanyo Semiconductor TRANS JFET N-CH 15V 63A 3PCP Original PDF
    2SK22185 Sanyo Semiconductor TRANS JFET N-CH 15V 75A 3PCP Original PDF

    2SK2218 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    grg 250

    Abstract: 2SK2218 ITR02610 ITR02611 ITR02612 ITR02613 ITR02614 ITR02615 ITR02616 ITR02617
    Text: 注文コード No. N 5 2 0 2 2SK2218 No. N5202 70999 2SK2218 特長 N チャネル接合形シリコン電界効果トランジスタ 高周波低雑音増幅用 ・FBET プロセス採用。 ・アマチュア無線機用。 ・UHF 帯増幅 , 混合 , 発振用 , アナログスイッチ用。


    Original     		2SK2218 N5202 250mm2 700MHz --j50 ITR02633 ITR02634 grg 250 2SK2218 ITR02610 ITR02611 ITR02612 ITR02613 ITR02614 ITR02615 ITR02616 ITR02617 PDF

    2SK2218

    Abstract: KT 0038 2SK22
    Text: Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches.


    Original     		ENN5202 2SK2218 2SK2218] 25max 2SK2218 KT 0038 2SK22 PDF

    2SK2218

    Abstract: enn5202
    Text: Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |.


    Original     		ENN5202 2SK2218 2SK2218] 25max 2SK2218 enn5202 PDF

    TT2192

    Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
    Text: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.


    Original     		2SK1886 2SK4043LS SB100-09K TIG004SS TIG030TS 2SC4493 2SK1887 SB10-18 TIG004T TT2192 sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF PDF

    2SK2218

    Abstract: No abstract text available
    Text: Ordering num ber: E N 5202 _ 2SK2218 N-Channel Junction Silicon FET No.5202 High-Frequency Low-Noise Amp Applications Features • Adoption of FBET process. • Amateur radio equipment. • UHF amplifiers, MIX, OSC, analog switches. • Large I y f8 I .


    OCR Scan     		EN5202 2SK2218 PDF

    2sk77

    Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
    Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications


    OCR Scan     		250mm 2SK212, 2SK315, 2SK544, 2SK669, 2SK1841 2SK2270. 2SK304, 2SK404, 2SK427, 2sk77 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j PDF

    k669 transistor

    Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
    Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r


    OCR Scan     		250mm Ratings/Ta-25 2SK2170UA) 2SK1069 2SK1332CV) 2SK209KH) 2SK2219CD) T0-126LP T0-220CI T0-220ML k669 transistor k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546 PDF

    SK968

    Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
    Text: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications


    OCR Scan     		250mm ics/Ta-25 2SK212 2SK315 2SK544 2SK669, 2SK1841 2SK2270. 2SK304, 2SK427, SK968 2SK937 2SK669 2SJ286 2SK5 2SK543 2SK436 2SK715 PDF

    2sk303

    Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
    Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4


    OCR Scan     		2SA1256 2SA1343 2SA1655 2SK2167 2SK2168 2SK2170 2SK2171 2SK2260 2SK2218 2SK2219 2sk303 2SK283 sk184 SK174 2SK436 2SK848 P/N146071 2sd22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta - 25 O RDSfon ID •VGS Applications Voss CV> V(tff ID (A) PD m Teh CC) VGSS(off) (V> RDS (on) m ax(Q) |Yls| @ VDS - ID ID <A) VGS (V) VDS a ID (A)


    OCR Scan     		2SK1424 2SK1425 2SK212 2SK2395 2SK304 17Q7ti PDF