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ROHM Semiconductor 2SD1664T100P TRANS NPN 32V 1A MPT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1664T100P	Digi-Reel			1	1 $0.68 10 $0.422 100 $0.68 1000 $0.20566 10000 $0.20566	Buy Now
	2SD1664T100P	Cut Tape			1	1 $0.68 10 $0.422 100 $0.68 1000 $0.20566 10000 $0.20566	Buy Now
	2SD1664T100P	Reel			1,000	1 - 10 - 100 - 1000 $0.18458 10000 $0.13574	Buy Now
Mouser Electronics	2SD1664T100P					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micro Commercial Components 2SD1664-P-TP TRANS NPN 32V 1A SOT89
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DigiKey	2SD1664-P-TP	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components 2SD1664-R-TP Interface
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DigiKey	2SD1664-R-TP	Bulk			20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	2SD1664-R-TP					1 - 10 - 100 - 1000 - 10000 -	Get Quote
ROHM Semiconductor 2SD1664T100Q TRANS NPN 32V 1A MPT3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1664T100Q	Cut Tape			1	1 $0.68 10 $0.68 100 $0.68 1000 $0.68 10000 $0.68	Buy Now
	2SD1664T100Q	Digi-Reel			1	1 $0.68 10 $0.68 100 $0.68 1000 $0.68 10000 $0.68	Buy Now
	2SD1664T100Q	Reel			1,000	1 - 10 - 100 - 1000 $0.18458 10000 $0.13574	Buy Now
Mouser Electronics	2SD1664T100Q					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	2SD1664T100Q			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components 2SD1664-Q-TP TRANS NPN 32V 1A SOT89
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1664-Q-TP	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SD1664 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1664	Kexin	Medium Power Transistor	Original	PDF
2SD1664	ROHM	Medium Power Transistor (32V, 1A)	Original	PDF
2SD1664	ROHM	Medium Power Transistor (32V, 1A)	Original	PDF
2SD1664	TY Semiconductor	Medium Power Transistor - SOT-89	Original	PDF
2SD1664	Unisonic Technologies	MEDIUM POWER NPN TRANSISTOR	Original	PDF
2SD1664	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1664	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1664	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1664	ROHM	SOT-23, SOT-89 and D-Pak Transistors	Scan	PDF
2SD1664	ROHM	Transistor Selection Guide	Scan	PDF
2SD1664-P-TP	Micro Commercial Components	TRANSISTOR TO-92 MOD	Original	PDF
2SD1664Q	ROHM	Medium Power Transistor (32V, 1A)	Original	PDF
2SD1664-Q-TP	Micro Commercial Components	TRANSISTOR TO-92 MOD	Original	PDF
2SD1664T100P	ROHM	TRANSISTOR NPN 32V 1A SOT-89 TR	Original	PDF

2SD1664T100P	ROHM	Medium Power Transistor (32 V, 1 A)	Original	PDF
2SD1664T100Q	ROHM	TRANS NPN 32V 1A SOT-89	Original	PDF
2SD1664T100Q	ROHM	Medium Power Transistor (32 V, 1 A)	Original	PDF
2SD1664T100R	ROHM	TRANS NPN 32V 1A SOT-89	Original	PDF
2SD1664T100R	ROHM	Medium Power Transistor (32 V, 1 A)	Original	PDF

2SD1664 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
smd transistor marking br Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664 Text: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5	Original	2SD1664 2SB1132 40x40x0 500mA -50mA 100MHz smd transistor marking br smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664	PDF
Untitled Abstract: No abstract text available Text: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current	Original	2SB1132 2SD1664 100ms 40x40x0 -50uA 30MHz	PDF
2SD1664 Abstract: 4250 transistor Text: 2SD1664 NPN Silicon General Purpose Transistor Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 Features A E E1 SOT-89 b1 1 2 b 3 C e L Power dissipation o PCM : 0.5 W Tamb= 25 C e1 1.BASE Collector current 2.COLLECTOR ICM : 1 A 3.EMITTER	Original	2SD1664 OT-89 01-Jun-2002 2SD1664 4250 transistor	PDF
2SD1858 Abstract: 2SB1132 2SB1237 2SD1664 T100 rohm 2sd1664 Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗	Original	2SD1664 2SD1858 2SD1664 65Max. SC-62 500mA 2SB1132 2SB1237 R0039A 2SD1858 2SB1237 T100 rohm 2sd1664	PDF
p64 transistor Abstract: 2SD1664PT 2SD1664P Text: CHENMKO ENTERPRISE CO.,LTD 2SD1664PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.	Original	2SD1664PT SC-62/SOT-89 p64 transistor 2SD1664PT 2SD1664P	PDF
transistor Ic 1A datasheet NPN Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor	Original	2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) transistor Ic 1A datasheet NPN 2SD1858 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor	PDF
2SD1664 Abstract: No abstract text available Text: 2SD1664 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃	Original	2SD1664 OT-89 500mA, 2SD1664	PDF
Untitled Abstract: No abstract text available Text: 2SD1664 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)	Original	2SD1664 Freq150M	PDF
Untitled Abstract: No abstract text available Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) Complement the 2SB1132. SOT-89 1:EMITTER	Original	2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025	PDF
Untitled Abstract: No abstract text available Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗	Original	2SD1664 2SD1858 2SD1664 65Max. SC-62 500mA R1102A	PDF
Untitled Abstract: No abstract text available Text: 2SD1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage	Original	2SD1664 500mA/50mA) OT-89 100MHz 11-Dec-08	PDF
2SB1132 Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor Text: Transistors Medium Power Transistor 32V, 1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type	Original	2SB1132 2SA1515S 2SB1237 500mA 2SD1664 2SD1858. 96-120-B12) 2SB1237 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SB1132 transistor	PDF
2SD1664 Abstract: 2SB1132 Text: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) Complement the 2SB1132. SOT-89 1:EMITTER	Original	2SD1664 2SD1664 500mA/50mA) 2SB1132. OT-89 QW-R208-025 2SB1132	PDF
2SD1664 Abstract: 3933 Text: SPICE PARAMETER 2SD1664 by ROHM TR Div. * 2SD1664 NPN BJT model * Date: 2006/11/15 .MODEL 2SD1664 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1	Original	2SD1664 Q2SD1664 625E-15 30E-15 28E-12 576E-12 55E-12 801E-9 2SD1664 3933	PDF

Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1664 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER	Original	OT-89-3L 2SD1664 OT-89-3L 500mA/50mA) 2SB1132 100mA 100MHz	PDF
2sd1664 Abstract: No abstract text available Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components 2SD1664 Features • • • • • • Complements to 2SB1132 Low collector-to-emitter saturation voltage.	Original	2SD1664 2SB1132 2sd1664	PDF
2SD1664 Abstract: sot89 DAQ DAQ Electronics 2SB1132 transistor 2SD1664 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-89 2SD1664 OT-89 500mA/50mA) 2SB1132 100mA 100MHz 2SD1664 sot89 DAQ DAQ Electronics 2SB1132 transistor 2SD1664	PDF
2SB1132 Abstract: 2SD1664 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA z Compliments 2SD1664 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-89 2SB1132 OT-89 -500mA/-50mA 2SD1664 -100mA -500mA -50mA -50mA 30MHz 2SB1132 2SD1664	PDF
marking 2sd1664 Abstract: No abstract text available Text: Transistors Diodes SMD Type Product specification 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO	Original	2SD1664 2SB1132 40x40x0 500mA -50mA 100MHz marking 2sd1664	PDF
2SD1858 Abstract: 2SB1132 2SB1237 2SD1664 Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor	Original	2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) 2SD1858 2SB1237	PDF
Untitled Abstract: No abstract text available Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC /IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.	Original	-500mA -50mA) 2SD1664-die 2SB1132-die	PDF
SC-62 Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669 Text: - 260 - Ta=25<C , EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)	OCR Scan	2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1692 2SB1150 O-126) SC-62 2SD1666 2SD1667 2SD1668 2SD1669	PDF
2SD1664 Abstract: No abstract text available Text: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low	OCR Scan	2SD1664 500mA/50mA) /50mA) 2SB1132. 2SD1664	PDF
2SD1664 Abstract: Marking TRANSISTOR 232 Text: 2SD1664 Transistor, NPN Features Dimensions U n its : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SD1664; DA-*, where ★ is hFE code • PC = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage,	OCR Scan	2SD1664 SC-62) 2SD1664; 2SB1132 2SD1664 Marking TRANSISTOR 232	PDF

2SD1664 Search Results

2SD1664 Price and Stock

ROHM Semiconductor 2SD1664T100P

Micro Commercial Components 2SD1664-P-TP

Micro Commercial Components 2SD1664-R-TP

ROHM Semiconductor 2SD1664T100Q

Micro Commercial Components 2SD1664-Q-TP

2SD1664 Datasheets (19)

2SD1664 Datasheets Context Search

smd transistor marking br

Untitled

2SD1664

2SD1858

p64 transistor

transistor Ic 1A datasheet NPN

2SD1664

Untitled

Untitled

Untitled

Untitled

2SB1132

2SD1664

2SD1664

Untitled

2sd1664

2SD1664

2SB1132

marking 2sd1664

2SD1858

Untitled

SC-62

2SD1664

2SD1664