2SD1616A Search Results

2SD1616A Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SD1616A-AZ		Renesas Electronics Corporation	Bipolar Power Transistors, , /
2SD1616A-T-AZ		Renesas Electronics Corporation	Bipolar Power Transistors

2SD1616A Price and Stock

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Rochester Electronics LLC 2SD1616A-T-AZ NPN TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD1616A-T-AZ	Bulk			1,015	1 - 10 - 100 - 1000 - 10000 $0.3	Buy Now
Renesas Electronics Corporation 2SD1616A-T-AZ Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SD1616A-T-AZ		709,500		1,242	1 - 10 - 100 - 1000 - 10000 $0.3021	Buy Now
	2SD1616A-T-AZ		39,700		1,242	1 - 10 - 100 - 1000 - 10000 $0.3021	Buy Now
Rochester Electronics	2SD1616A-T-AZ		749,200		1	1 $0.2844 10 $0.2844 100 $0.2673 1000 $0.2417 10000 $0.2417	Buy Now
Luguang Electronic Technology Co Ltd 2SD1616A Transistor: NPN; bipolar; 60V; 1A; TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	2SD1616A				10	1 - 10 $0.08 100 $0.034 1000 $0.0271 10000 $0.0243	Get Quote

2SD1616A Datasheets (23)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1616A	Micro Electronics	NPN SILICON TRANSISTOR	Original	PDF
2SD1616A	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SD1616A	NEC	Semiconductor Selection Guide	Original	PDF
2SD1616A	NEC	NPN SILICON EPITAXIAL TRANSISTOR	Original	PDF
2SD1616A	Unisonic Technologies	NPN EPITAXIAL SILICON TRANSISTOR	Original	PDF
2SD1616A	Weitron	NPN Transistors	Original	PDF
2SD1616A	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1616A	Unknown		Scan	PDF
2SD1616A	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1616A	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1616A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD1616A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1616A	NEC	NPN SILICON TRANSISTORS	Scan	PDF
2SD1616A	USHA	Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A.	Scan	PDF

2SD1616A/JD	NEC	Silicon Transistor	Original	PDF
2SD1616A/JM	NEC	Silicon Transistor	Original	PDF
2SD1616AK	NEC	NPN Silicon Transistor	Scan	PDF
2SD1616AL	Sanyo Semiconductor	Low-Voltage High-Current Amplifier, Muting Applications	Original	PDF
2SD1616AL	NEC	NPN Silicon Transistor	Scan	PDF
2SD1616A-T	NEC	Silicon Transistor	Original	PDF

2SD1616A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
cross reference ic Abstract: 2SD1616A Text: DC COMPONENTS CO., LTD. 2SD1616A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter	Original	2SD1616A 100mA, cross reference ic 2SD1616A	PDF
utc d1616a Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616 Text: UNISONIC TECHNOLOGIES CO., 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: 2SD1616L/2SD1616AL PIN CONFIGURATION PIN NO.	Original	2SD1616/A 2SD1616L/2SD1616AL 2SD1616-T92-B 2SD1616L-T92-B 2SD1616-T92-K 2SD1616L-T92-K 2SD1616A-T92-B 2SD1616AL-T92-B 2SD1616A-T92-K 2SD1616AL-T92-K utc d1616a D1616A d1616 transistor d1616a TRANSISTOR D1616	PDF
2SB1116A Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG Text: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base	Original	2SB1116A 2SD1616A 2SB1116A-L 2SB1116A-K 2SB1116A-U 21-Jan-2011 2SB1116A 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG	PDF
2SD1616A Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TO-92 TRANSISTOR NPN FEATURE Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BSAE Symbol Parameter Value Units	Original	2SD1616A to150 100mA 100mA, PW350 2SD1616A	PDF
2SD1616 Abstract: 2SD16116 2SD1616A 2sd1616 datasheet Text: 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2SD16116 50 60 2SD1616A	Original	2SD1616 2SD1616A 2SD16116 2SD1616 2SD16116 2SD1616A 2sd1616 datasheet	PDF
2SD1616A Abstract: transistor 468 Text: ELECTRONICS MICRO DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. 2SD1616A NPN SILICON TRANSISTOR 4.68 0.18 TO-92B 4.6 (0.18) 12.7 (0.5) min. 3.58 B CE (0.14)	Original	2SD1616A 2SD1616A O-92B 150oC 100mA transistor 468	PDF
2SD1616 Abstract: 2SD1616A Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be	Original	2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TO-92 TRANSISTOR PNP 1. EMITTER FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A -50mA	PDF
2SD1616A Abstract: 2SD1616AL B200A 2SD1616 2sd1616l-x-t9s-k B300A 2SD1616AL TO-92 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 1 SIP-3 1 TO-92SP *Pb-free plating product number: 2SD1616L/2SD1616AL ORDERING INFORMATION	Original	2SD1616/A OT-89 O-92SP 2SD1616L/2SD1616AL 2SD1616-x-AB3-R 2SD1616L-x-AB3-R 2SD1616-x-G03-K 2SD1616L-x-G03-K 2SD1616-x-T92-B 2SD1616L-x-T92-B 2SD1616A 2SD1616AL B200A 2SD1616 2sd1616l-x-t9s-k B300A 2SD1616AL TO-92	PDF
2SD1616 Abstract: 2SD1616A Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be	Original	2SD1616 2SD1616A 2SD1616A 2SD1616 0V/120V -100mA	PDF
2SD1616A Abstract: No abstract text available Text: 2SD1616A 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	2SD1616A 100mA 100mA, PW350 2SD1616A	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility	Original	2SD1616, 2SD1616A 2SB1116 2SD1616	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM： 0.75 W（Tamb=25℃） Collector current ICM： 1 A Collector-base voltage V BR CBO： 120 V Operating and storage junction temperature range	Original	2SD1616A 270TYP 050TYP	PDF
1116a Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility	Original	2SD1616, 2SD1616A 2SB1116 2SD1616 1116a	PDF

2SB1116 Abstract: 2SB1116A Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR PNP TO-92 FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A -50mA 2SB1116/2SB1116A 2SB1116 2SB1116A	PDF
2sb1116 Abstract: 1116a Text: 2SB1116/1116A PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value VEBO Emitter-Base Voltage	Original	2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A 1116a	PDF
2SD1616 Abstract: 2sd1616 datasheet 2sd1616a Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be	Original	2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V 2sd1616 datasheet	PDF
2SD1616 Abstract: No abstract text available Text: 2SD1616 2SD1616A NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC	Original	2SD1616 2SD1616A 2SD16116 2SD1616	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 1 A ICM: Collector-base voltage 120 V V(BR)CBO:	Original	2SD1616A 100mA 100mA,	PDF
Untitled Abstract: No abstract text available Text: 2SD1616A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO	Original	2SD1616A to150 PW350 100mA, 100mA 100mA	PDF
2SD1616 Abstract: 2SD1616A Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be	Original	2SD1616 2SD1616A 2SD1616A 2SD1616 0V/120V -100mA	PDF
2SD1616AG Abstract: 2SD1616AL 2SD1616 2SD1616A 2SD1616-X-AB3-R 2SD161 2SD1616-G 2SD1616A-G XG03 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching Lead-free: 2SD1616L/2SD1616AL Halogen-free: 2SD1616G/2SD1616AG ORDERING INFORMATION	Original	2SD1616/A 2SD1616L/2SD1616AL 2SD1616G/2SD1616AG 2SD1616-x-AB3-R 2SD1616-x-G03-K 2SD1616-x-T92-B 2SD1616-x-T92-K 2SD1616-x-T9S-K 2SD1616A-x-AB3-R 2SD1616A-x-G03-K 2SD1616AG 2SD1616AL 2SD1616 2SD1616A 2SD1616-X-AB3-R 2SD161 2SD1616-G 2SD1616A-G XG03	PDF
SD1616A Abstract: SD-1616 2SD1616 2SD1616A SD1616 Text: NPN SILICON TRANSISTORS 2SD1616, 2SD 1616A DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of A F amplifier, general purpose application. PACKAGE DIMENSIONS in millimeters • Low Collector Saturation Voltage. FEATURES V c E sa t	OCR Scan	2SD1616, 2SD1616A 2SD1616/2SD1616A 2SD1616/2SD1616A) 2SB1116/2SB1116A SD1616A SD-1616 2SD1616 2SD1616A SD1616	PDF
TRANSISTORS 640 JS Abstract: LC-1 2SD1616A Text: Transistors 2SD1616A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse)	OCR Scan	2SD1616A 100mA 100mA TRANSISTORS 640 JS LC-1 2SD1616A	PDF

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2SD1616A Search Results

2SD1616A Result Highlights (2)

2SD1616A Price and Stock

Rochester Electronics LLC 2SD1616A-T-AZ

Renesas Electronics Corporation 2SD1616A-T-AZ

Luguang Electronic Technology Co Ltd 2SD1616A

2SD1616A Datasheets (23)

2SD1616A Datasheets Context Search

cross reference ic

utc d1616a

2SB1116A

2SD1616A

2SD1616

2SD1616A

2SD1616

Untitled

2SD1616A

2SD1616

2SD1616A

Untitled

Untitled

1116a

2SB1116

2sb1116

2SD1616

2SD1616

Untitled

Untitled

2SD1616

2SD1616AG

SD1616A

TRANSISTORS 640 JS