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    D1616 Search Results

    D1616 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SD1616A-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SD1616A-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    D1616 Price and Stock

    onsemi KSD1616AGTA

    TRANS NPN 60V 1A TO92-3
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    DigiKey KSD1616AGTA Ammo Pack 16,000 2,000
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    Mouser Electronics KSD1616AGTA 9,510
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    Rochester Electronics KSD1616AGTA 8,278 1
    • 1 $0.0978
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    TME KSD1616AGTA 1
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    Avnet Silica KSD1616AGTA 11 Weeks 2,000
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    Chip1Stop KSD1616AGTA Cut Tape 634
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    Master Electronics KSD1616AGTA 6,000
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    onsemi KSD1616AYTA

    TRANS NPN 60V 1A TO92-3
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    DigiKey KSD1616AYTA Ammo Pack 10,000 2,000
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    Mouser Electronics KSD1616AYTA 5,469
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    Rochester Electronics KSD1616AYTA 414 1
    • 1 $0.0981
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    TME KSD1616AYTA 1
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    Avnet Asia KSD1616AYTA 10 Weeks 8,000
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    Avnet Silica KSD1616AYTA 11 Weeks 2,000
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    Chip1Stop KSD1616AYTA Cut Tape 2,344
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    EBV Elektronik KSD1616AYTA 11 Weeks 2,000
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    Flip Electronics KSD1616AYTA 1,805
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    Master Electronics KSD1616AYTA 8,000
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    TAIYO YUDEN LSDND1616KKT1R5MM

    FIXED IND 1.5UH 1.33A 185MOHM SM
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    DigiKey LSDND1616KKT1R5MM Digi-Reel 7,500 1
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    LSDND1616KKT1R5MM Cut Tape 7,500 1
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    LSDND1616KKT1R5MM Reel 7,500 2,500
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    Mouser Electronics LSDND1616KKT1R5MM 2,494
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    Newark LSDND1616KKT1R5MM Cut Tape 5,000 1
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    Integrated Silicon Solution Inc IS43LD16160B-25BLI

    IC DRAM 256MBIT PAR 134TFBGA
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    DigiKey IS43LD16160B-25BLI Tray 134 1
    • 1 $6.38
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    Avnet Silica IS43LD16160B-25BLI 14 Weeks 171
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    Hammond Manufacturing EN4SD16166GY

    BOX STEEL GRAY 16"L X 16"W
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    DigiKey EN4SD16166GY Box 10 1
    • 1 $259.62
    • 10 $230.05
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    Mouser Electronics EN4SD16166GY
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    Newark EN4SD16166GY Bulk 50 1
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    D1616 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D16/16 USHA Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes. Vrrm = 1600V, Vrsm = 1700V. Original PDF

    D1616 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-2-326-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-426-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 180 A 180 200 A 140 220 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-1-426-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-2-326-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308

    Untitled

    Abstract: No abstract text available
    Text: IGGD6-1-328-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 170 A 160 180 A 130 200 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGGD6-1-328-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-426-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 180 A 180 200 A 140 220 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-1-426-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min

    b6u b6ci

    Abstract: No abstract text available
    Text: IGDD6-2-426-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 330 A 320 360 A 260 390 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-2-426-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308 b6u b6ci

    SKC4M7-40A1

    Abstract: No abstract text available
    Text: IGDD6-2-426-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 330 A 320 360 A 260 390 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-2-426-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308 SKC4M7-40A1

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-428-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 200 A 200 220 A 160 240 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-1-428-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min

    23/IGDD6-2-428-D1616-E1F12-DH-FA

    Abstract: No abstract text available
    Text: IGDD6-2-428-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 360 A 360 390 A 290 430 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-2-428-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min 6-2-428-D1616-E1F12-DH-FA Px308/308 23/IGDD6-2-428-D1616-E1F12-DH-FA

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-2-328-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 310 A 300 330 A 240 360 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-2-328-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min 6-2-328-D1616-E1F12-DH-FA Px308/308

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-326-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 150 A 150 160 A 120 180 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    PDF IGDD6-1-326-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original
    PDF

    D1616A

    Abstract: d1616 transistor d1616a utc d1616a UTC d1616
    Text: UTC D1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150


    Original
    PDF 2SD1616/A OT-89 D1616 D1616A width10ms, QW-R208-015 transistor d1616a utc d1616a UTC d1616

    utc d1616a

    Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
    Text: UNISONIC TECHNOLOGIES CO., D1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: D1616L/D1616AL PIN CONFIGURATION PIN NO.


    Original
    PDF 2SD1616/A 2SD1616L/2SD1616AL 2SD1616-T92-B 2SD1616L-T92-B 2SD1616-T92-K 2SD1616L-T92-K 2SD1616A-T92-B 2SD1616AL-T92-B 2SD1616A-T92-K 2SD1616AL-T92-K utc d1616a D1616A d1616 transistor d1616a TRANSISTOR D1616

    TRANSISTOR D1616

    Abstract: transistor d1616a D1616A d1616 a KSD1 d1616
    Text: D1616/1616A D1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original
    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A KSD1616A PW10ms, KSD1616 TRANSISTOR D1616 transistor d1616a D1616A d1616 a KSD1 d1616

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original
    PDF

    D1616A

    Abstract: transistor d1616a 1616a TRANSISTOR D1616 D1616 KSD1616 KSD1616A
    Text: D1616/1616A D1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original
    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A PW10ms, D1616A transistor d1616a 1616a TRANSISTOR D1616 D1616 KSD1616 KSD1616A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original
    PDF

    transistor d1616a

    Abstract: D1616A TRANSISTOR D1616 d1616 d1616 transistor 1616A KSD1616 KSD1616A D1616A g
    Text: D1616/1616A D1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original
    PDF KSD1616/1616A KSB1116/1116A KSD1616 KSD1616A PW10ms, transistor d1616a D1616A TRANSISTOR D1616 d1616 d1616 transistor 1616A KSD1616 KSD1616A D1616A g