Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC5376 Search Results

    SF Impression Pixel

    2SC5376 Price and Stock

    Toshiba America Electronic Components 2SC5376-B,LF(B

    2SC5376-B,LF(B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5376-B,LF(B 93,000 10,170
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    2SC5376-B,LF(B 30,000 10,170
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics 2SC5376-B,LF(B 123,000 1
    • 1 $0.0347
    • 10 $0.0347
    • 100 $0.0326
    • 1000 $0.0295
    • 10000 $0.0295
    		Buy Now

    Toshiba America Electronic Components 2SC5376-A,LF(B

    2SC5376-A,LF(B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5376-A,LF(B 69,000 10,170
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics 2SC5376-A,LF(B 69,000 1
    • 1 $0.0347
    • 10 $0.0347
    • 100 $0.0326
    • 1000 $0.0295
    • 10000 $0.0295
    		Buy Now

    Toshiba America Electronic Components 2SC5376-B(TE85L,F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5376-B(TE85L,F) 1,456
    • 1 $3.16
    • 10 $3.16
    • 100 $3.16
    • 1000 $1.185
    • 10000 $1.185
    		Buy Now

    Toshiba America Electronic Components 2SC5376FV-A,L3F(B

    2SC5376FV - Transistor Silicon NPN Epitaxial Type
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SC5376FV-A,L3F(B 8,000 1
    • 1 $0.0232
    • 10 $0.0232
    • 100 $0.0218
    • 1000 $0.0197
    • 10000 $0.0197
    		Buy Now

    Toshiba America Electronic Components 2SC5376BTE85LF

    SILICON NPN EPITAXIAL TYPE TRANSISTOR Small Signal Bipolar Transistor, 0.4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SC5376BTE85LF 51,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    2SC5376 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5376 Unknown NPN Transistor Scan PDF
    2SC5376 Toshiba SILICON NPN EPITAXIAL TYPE TRANSISTOR Scan PDF
    2SC5376 Toshiba NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING APPLICATIONS) Scan PDF
    2SC5376F Toshiba Original PDF
    2SC5376FV Toshiba Silicon NPN Epitaxial Transistor Original PDF
    2SC5376FV-A Toshiba 2SC5376 - TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC5376FV-B Toshiba 2SC5376 - TRANSISTOR 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal Original PDF

    2SC5376 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5376

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •


    Original     		PDF 2SC5376 2SC5376

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) · High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •


    Original     		PDF 2SC5376

    2SC5376FV

    Abstract: sat 1205
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •


    Original     		PDF 2SC5376FV 2SC5376FV sat 1205

    2SC5376

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ·


    Original     		PDF 2SC5376 2SC5376

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •


    Original     		PDF 2SC5376

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA 0.4 1 2 3 Rating Unit Collector-base voltage


    Original     		PDF 2SC5376FV

    1005 7J

    Abstract: 2SC5376CT BK500
    Text: 2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5376CT General Purpose Amplifier Applications Switching and Muting Switch Applications Unit: mm 0.6±0.05 @IC = 10 mA/IB = 0.5 mA ３ 1.0±0.05 • Large collector current: IC = 400 mA (max)


    Original     		PDF 2SC5376CT 1005 7J 2SC5376CT BK500

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376F ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い: VCE sat (1) = 15 mV (標準) •


    Original     		PDF 2SC5376F 2SC5376F

    BK500

    Abstract: 1005 7J
    Text: 2SC5376CT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376CT ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm 0.6±0.05 • コレクタ電流が大きい ３ 0.65±0.02 コレクタ飽和電圧が低い: VCE sat (1) = 15 mV (標準)


    Original     		PDF 2SC5376CT BK500 1005 7J

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV

    2SC5376FV

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV 2SC5376FV

    2SC5376

    Abstract: No abstract text available
    Text: 2SC5376 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376 ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE sat (1) = 15 mV (標準)


    Original     		PDF 2SC5376 2SC5376

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5376 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original     		PDF 2SC5376

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)


    OCR Scan     		PDF 2SC5376 400mA OL44IUSYMBOL

    2SC5376

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V ce sat (l) = 15mV (Typ.) @ Iq = 10mA /Ig = 0.5mA


    OCR Scan     		PDF 2SC5376 400mA 2SC5376

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS Low Collector Saturation Voltage : Vc e sat (l) = 15mV (Typ.) @ l£ = 10mA / 1]3 = 0.5mA


    OCR Scan     		PDF 2SC5376 400mA 10//S

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AN D SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE sat W = 15mV (Typ.) @ 1(3 = 10mA / Ig —0.5mA


    OCR Scan     		PDF 2SC5376 400mA