2SB929A Search Results

2SB929A Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SB929A		Kexin	Silicon PNP Epitaxial Planar Type		Original	PDF
2SB929A		Panasonic	Silicon PNP epitaxial planar type		Original	PDF
2SB929A)		Panasonic	PNP Transistor		Original	PDF
2SB929A		TY Semiconductor	Silicon PNP Epitaxial Planar Type - TO-252		Original	PDF
2SB929A		Unknown	Cross Reference Datasheet		Scan	PDF
2SB929A		Unknown	The Transistor Manual (Japanese) 1993		Scan	PDF
2SB929A		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2SB929A		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
2SB929A		Panasonic	Silicon Medium Power Transistors		Scan	PDF

2SB929A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SB929 Abstract: 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature	Original	2SB929, 2SB929A 2SB929 2SB929 2SB929A 2SD1252 2SD1252A	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit	Original	2002/95/EC) 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature	Original	2SB0929, 2SB0929A 2SB929, 2SB929A) 2SB0929 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
Untitled Abstract: No abstract text available Text: Product specification 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .	Original	2SB929A O-252	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0929 2SB929 and 2SB0929A (2SB929A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage	Original	2SD1252, 2SD1252A 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
2SB929A Abstract: No abstract text available Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB929A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1	Original	2SB929A O-252 2SB929A	PDF
2SB0929 Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SB0929 2SB929 , 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0929A −60 V Collector-emitter voltage 2SB0929 (Base open) 2SB0929A	Original	2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A	PDF
2SB929 Abstract: 2SB929A 2SD1252 2SD1252A Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB929 and 2SB929A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 6 V Peak collector current ICP	Original	2SD1252, 2SD1252A 2SB929 2SB929A 2SD1252 2SD1252 10MHz 2SB929A 2SD1252A	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
2SD1039 Abstract: to-53 BUW64A Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220	Original	2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A	PDF
2SB909 Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902 Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125	Original	2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1252, 2SD1252A Unit : mm 8.7 • Features • High DC current gain hre and good linearity • Low collector-emitter saturation voltage (V c el . u)	OCR Scan	2SB929, 2SB929A 2SD1252A 2SB929 2SB929A	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SD1252, 2SD1252A 2SD1252, 2SD1252A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB929, 2SB929A • Features • H igh D C c u r re n t gain Iiff U n it : 3.7max. 8.7 n t— <1 l.l,max	OCR Scan	2SD1252, 2SD1252A 2SB929, 2SB929A 2SD1252 bR32flS2	PDF
2SB929 Abstract: 2SB929A 2SD1252 2SD1252A Text: Power T ransistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1252, 2SD1252A • Features . • High DC current gain lire and good linearity ' • Low collector-emitter saturation voltage ( V Cec« .o )	OCR Scan	2SB929, 2SB929A 2SD1252, 2SD1252A 2SB929 2SB929A 2SD1252 2SD1252A	PDF

PA8080 Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251 Text: - 240 * mXÊfâ Ta=250, 0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)	OCR Scan	2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251	PDF
D1276A Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463	OCR Scan	2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A	PDF
2SB927 Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M Text: - 66 - T a = 2 5 cC , EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O	OCR Scan	2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908	PDF
D1274A Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398 Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691	OCR Scan	2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398	PDF