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    2N514A Search Results

    2N514A Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N514A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N514A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N514A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N514A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N514A Unknown Vintage Transistor Datasheets Scan PDF
    2N514A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N514A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N514A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N514A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N514A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N514A Unknown GE Transistor Specifications Scan PDF
    2N514A Semitron Germanium Power Transistors Scan PDF
    2N514A Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N514A Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF

    2N514A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp germanium to36

    Abstract: MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 2N2728 TO36 package germanium
    Text: POWER GERMANIUM PNP Item Number Part Number I C - -10 6~~~ - MP110B 2N1166 2N1167 SDG606 MP1077 2N1166A 2N1167A 2N575 15 20 - ~~:gA 25 30 2N575A 2N514A NKT501 NKT503 2N1519 ADY26 ADY26 COTt076 ~~~g~~ -35 40 2N2638 CTP3545 MP2100A MP2100A MP2100B SOO607 2N1652


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    PDF 2N2728 MP2357 2N2357 2N1522 2N1523 MP2358 pnp germanium to36 MP2400B 2N575A 2N5694 2N2156 2N575 2N1518 TO36 package germanium

    Untitled

    Abstract: No abstract text available
    Text: 2N514A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60º V(BR)CBO (V)60 I(C) Max. (A)25 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.25 @I(C) (A) (Test Condition)25


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    PDF 2N514A StyleTO-41var

    2N1143

    Abstract: 2N1142 TI3030 TI3028 2N1141 TI3027 TI3031 2N458A germanium transistors PNP 2N455A
    Text: Germanium Transistors Type Case C o Maxim um R atings at 25°C amb. C haracteristics S P E C IA L 11 No. « a> o » O FE A TU R ES A - > ,- V CB V CE V EB V V V •c A Ptot W fc A h FE a Min. fT Max. V C E (S A T A -1 r 1-


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    PDF 2N524 2N525 2N526 2N527 2N1141 2N1142 2N1143 2N456A TI3030 TI3031 TI3028 TI3027 2N458A germanium transistors PNP 2N455A

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    2N65s

    Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
    Text: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z


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    PDF 204EbD7 2N497AI 2N539 2N696A 2N728 2N871 2N922 2N498 2N539A 2N697 2N65s 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    TO36

    Abstract: 2N511 TO41 2N1560 2N2075 2N1556A 2N1554 2N1519 2N1558 2n1980
    Text: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type VcBO y ^CEO y ^EBO V Y ce . V hFE VcES y Min. Vçe Max. @ y h A SA TU R A TIO N VOLTAGES Vc£lai ¡ e @ lg y y A A 8 / .c ° c /w 15 AMP GERMANIUM PNP Cont. 20.0 30.0 30.0 40.0 40.0 30 45 45


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    PDF 2N1553A 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1556A 2N1557 MT-36 8-32NC-2A TO36 2N511 TO41 2N1560 2N2075 2N1519 2N1558 2n1980

    3N50

    Abstract: 2N1167A 2N2081 SDG603 2N2078 2N2286 2N2285 2N2287 2N2636 2N511
    Text: 57 GERMANIUM POWER TRANSISTORS SA T U R A T IO r vl V O L T A G E S CURREIV IT G A IN @ T Y PE N U M B ER C ASE TYPE V CBO V V CEO V V EBO v V C ER V V C ES V hl:E MIN. M AX. V CE V I *C A V CE s V BE(s) V I V 'C A I >B A 15 AMP GE 3MAIM UM PIMP Observe (—) Negative Polarity


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    PDF 2N2077 2N2078 2N2079 2N2080 2N2082 2N2612 2N2077 2N2078 2N2079 2N2080 3N50 2N1167A 2N2081 SDG603 2N2286 2N2285 2N2287 2N2636 2N511

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N1560

    Abstract: 2N1982 2N2075 2N2081 2N511 TO41 2N511B TO36 3N50 2N1557
    Text: GERMANIUM POWER TRANSISTORS Type Number Case | Type Vcao y yceo y ytuo y VCES VCE, y V CURRENT GAIN Min. Max. V h FE V CE @ SATURATION VOLTAGES .] Ic @ Iß y y A A A Yctti Iç Bj.c °c/w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45 45 60 60


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    PDF 2N1553A 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1556A 2N1557 NS257 T0-18 2N1560 2N1982 2N2075 2N2081 2N511 TO41 2N511B TO36 3N50

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    TO41

    Abstract: TO36 Germanium Power Transistors Germanium Power Devices 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1557
    Text: GERMANIUM POWER TRANSISTORS Type Number | Case Type Vcao y y ceo y y tuo y VCES y VCE, V CURRENT G A IN hFE VCE @ Iç Min. Max. V A SA TU R A TIO N VOLTAGES Yctti .] / c @ Ib y y A A Bj.c ° c /w 15 AMP GERMANIUM PNP (Cont.) 20.0 30.0 30.0 40.0 40.0 30 45


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    PDF 2N1553A 2N1554 2N1554A 2N1555 2N1555A 2N1556 2N1556A 2N1557 2N1557A 40rmanium TO41 TO36 Germanium Power Transistors Germanium Power Devices