Untitled
Abstract: No abstract text available
Text: Si4776DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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PDF
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Si4776DY
AN609,
2708u
8749m
7206m
3269u
6989m
7808m
9944m
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C
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Original
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PDF
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VS-UFB250FA60
OT-227
2002/95/EC
VS-UFB250FA60
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
VS-UFB250FA60
Abstract: No abstract text available
Text: VS-UFB250FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 250 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C
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Original
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PDF
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VS-UFB250FA60
OT-227
2002/95/EC
VS-UFB250FA60
OT-227
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS332DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiS332DN
11-Mar-11
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1.0213
Abstract: No abstract text available
Text: Si8472DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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Si8472DB
AN609,
6509u
6083u
3644m
2717u
9253u
2500m
1182m
27-Jun-11
1.0213
|
Untitled
Abstract: No abstract text available
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
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Original
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PDF
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VSMY7850X01
VSMY7850X01
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
LCD-016O002F
Abstract: No abstract text available
Text: LCD-016O002F www.vishay.com Vishay 16 x 2 Character LCD FEATURES • Type: Character • Display format: 16 x 2 characters • Built-in controller: ST7032 • Duty cycle: 1/16 • Bias cycle: 1/5 ST7032 • + 5 V power supply • Compliant to RoHS Directive 2002/95/EC
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PDF
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LCD-016O002F
ST7032
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
LCD-016O002F
|
Untitled
Abstract: No abstract text available
Text: JK1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902
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Original
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PDF
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2002/95/EC
2002/96/EC
TSOP34.
TSOP32.
TSOP34838JK1
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: SQM40P10-40L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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SQM40P10-40L
AN609,
3391m
7367m
6174m
0266m
27-Jun-11
|
VSMY7850X01
Abstract: VSMY7850X01-GS08
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
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Original
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PDF
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VSMY7850X01
VSMY7850X01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VSMY7850X01-GS08
|
Untitled
Abstract: No abstract text available
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
|
Original
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PDF
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VSMY7850X01
VSMY7850X01
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
37931
Abstract: si88
Text: Si8809EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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Si8809EDB
AN609,
7275u
0825m
3194m
1940u
7629u
7977m
0898m
27-Jun-11
37931
si88
|
Untitled
Abstract: No abstract text available
Text: SQM50P04-09L_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
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PDF
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SQM50P04-09L
AN609,
3391m
7367m
6174m
0266m
27-Jun-11
|
63210
Abstract: No abstract text available
Text: SPICE Device Model Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si3424CDV
11-Mar-11
63210
|
|
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Untitled
Abstract: No abstract text available
Text: JL1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902
|
Original
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PDF
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2002/95/EC
2002/96/EC
TSOP34.
TSOP32.
TSOP32238JL1
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: SQS462EN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
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PDF
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SQS462EN
AN609,
0740m
2890u
3408m
7561u
8681m
4959m
2858u
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
|
Original
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PDF
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VSMY7850X01
VSMY7850X01
11-Mar-11
|
si23
Abstract: No abstract text available
Text: SPICE Device Model Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si2324DS
11-Mar-11
si23
|
Untitled
Abstract: No abstract text available
Text: Si1023CX-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
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PDF
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Si1023CX-GE3
AN609,
1307u
4602u
1949m
1221m
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: Si2342DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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Si2342DS
AN609,
7591u
5804m
8813m
6905u
6317m
4989m
7173m
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 60 MHz 10.0 VDC Lower Frequency: Upper Frequency: 110 Tuning Voltage: 0.5 MHz Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +5.0 +8.5 +12.0 dBm 25 mA Pushing: 0.5 MHz/V
|
Original
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PDF
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10kHz
100kHz
CVCO55CL-0060-0110
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: JH1 www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note * Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902
|
Original
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PDF
|
2002/95/EC
2002/96/EC
TSOP34.
TSOP32.
TSOP14838JH1
27-Jun-11
|
Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL 2 P U B L IC A T IO N LOC D IS T R IG H TS AD 00 RESERVED. C O P Y R IG H T REVISIO N S D E S C R IP T IO N G2 1. OPERATING TEMPERATURE: 2. STORAGE 3. CONTACT TIMING: NON-SHORTING. 4. CONTACT
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OCR Scan
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PDF
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27JUN11
20VDC.
DEC01
DEC01
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