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    2743021446 Search Results

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    2743021446 Price and Stock

    Fair-Rite Products Corp 2743021446

    FERRITE BEAD 105 OHM 2SMD 1LN
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    DigiKey 2743021446 Bulk 1,322 1
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    Mouser Electronics 2743021446 26,039
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    Verical 2743021446 1,284 173
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    Newark 2743021446 Bulk 5,000
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    Onlinecomponents.com 2743021446
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    Bristol Electronics 2743021446 361
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    Quest Components 2743021446 639
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    2743021446 395
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    Master Electronics 2743021446
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    Fair-Rite Products Corp 2743021447

    Ferrite Beads 43 SM BEAD Z=95 OHM @100MHz
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    Mouser Electronics 2743021447 94,379
    • 1 $0.24
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    PSC Electronics 2743021446

    1 FUNCTIONS, 5 A, FERRITE BEAD
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    Quest Components 2743021446 225
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    2743021446 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2743021446 Fair-Rite Products Inductor: Bead: 95: 100M Original PDF

    2743021446 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743021446 Printed: 2013-07-03 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743021446 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743021446 Printed: 2014-06-11 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743021446 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


    Original
    PDF

    sm 4500

    Abstract: 2743021446
    Text: Fair-Rite Product's Catalog Part Data Sheet, 2743021446 Printed: 2010-11-09 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743021446 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)


    Original
    PDF

    AN1294

    Abstract: PD55008 PD55008S 11 0741
    Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION


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    PDF PD55008 PD55008S PD55008 PowerSO-10RF. AN1294 PD55008S 11 0741

    R36W

    Abstract: lnk303 samsung ltn LD3130 CRC10 MXT3010 R44-R47 M 8012 R54-R55 t9354
    Text: MXT3010 Reference Manual Version 4.1 Order Number: 100108-05 October 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the


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    PDF MXT3010 16-bit MXT3010 R36W lnk303 samsung ltn LD3130 CRC10 R44-R47 M 8012 R54-R55 t9354

    AN1294

    Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
    Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package


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    PDF PD57006-E PD57006S-E 945MHz PowerSO-10RF PD57006 PowerSO-10RF. PD570and AN1294 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E

    transistor smd po3

    Abstract: PD55003 AN1294 PD55003S
    Text: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


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    PDF PD55003 PD55003S PD55003 PowerSO-10RF. transistor smd po3 AN1294 PD55003S

    MRF1513 equivalent

    Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
    Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband


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    PDF MRF1513/D MRF1513T1 MRF1513T1 MRF1513 equivalent 2743021446 MRF1513 AN721 J524 AN211A AN215A Transistor J438 J182 transistor

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


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    PDF MRF186/D MRF186

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device


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    PDF MRF1517N MRF1517NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    PDF MRF1513 MRF1513NT1. MRF1513T1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    PDF MRF1518/D MRF1518T1

    MRF186

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


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    PDF MRF186/D MRF186 DEVICEMRF186/D

    PD55003TR

    Abstract: transistor smd po3 901 704 16 08 55 AN1294 PD55003 PD55003-E PD55003S Z1033
    Text: PD55003-E PD55003S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package PowerSO-10RF


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    PDF PD55003-E PD55003S-E 500MHz PowerSO-10RF PD55003 PowerSO-10RF. PD55003TR transistor smd po3 901 704 16 08 55 AN1294 PD55003-E PD55003S Z1033

    MRF186

    Abstract: No abstract text available
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


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    PDF MRF186/D MRF186 MRF186

    AN721

    Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial


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    PDF MRF1518/D MRF1518T1 MRF1518T1 AN721 J361 AN211A AN215A transistor j334 j327 transistor

    MRF186

    Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
    Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


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    PDF MRF186/D 31JAN05 MRF186 31JUL04 MRF186 C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent

    J-031

    Abstract: AN211A AN215A AN721 MRF1511T1
    Text: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband


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    PDF MRF1511/D MRF1511T1 MRF1511T1 DEVICEMRF1511/D J-031 AN211A AN215A AN721

    0.5 W silicon zener diode

    Abstract: TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF1518T1 MRF-151
    Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


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    PDF MRF1518/D MRF1518T1 MRF1518T1 DEVICEMRF1518/D 0.5 W silicon zener diode TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF-151

    2743021446

    Abstract: j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N
    Text: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 10, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device


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    PDF MRF1513N MRF1513NT1 2743021446 j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N

    transistor smd 6z

    Abstract: smd transistor 6Z SMD Transistor 9z transistor smd 4z SMD Transistor 7z smd 93 3Z 901 704 16 08 55 PD55003TR AN1294 PD55003
    Text: PD55003-E PD55003S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package


    Original
    PDF PD55003-E PD55003S-E 500MHz PowerSO-10RF PD55003 PowerSO-10RF. PD55and transistor smd 6z smd transistor 6Z SMD Transistor 9z transistor smd 4z SMD Transistor 7z smd 93 3Z 901 704 16 08 55 PD55003TR AN1294

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan
    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    F5003

    Abstract: 1N4734
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan
    PDF F5003 MRF5003 MRFS003 AN215A, F5003 1N4734

    MRF5003

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5003 MRF5003R1 N-Channel Enhancement-Mode The MRF5003 is designed for broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband


    OCR Scan
    PDF MRF5003 AN215A, MRF5003R1