Untitled
Abstract: No abstract text available
Text: Fair-Rite Product's Catalog Part Data Sheet, 2743021446 Printed: 2013-07-03 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743021446 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)
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Untitled
Abstract: No abstract text available
Text: Fair-Rite Product's Catalog Part Data Sheet, 2743021446 Printed: 2014-06-11 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743021446 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)
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sm 4500
Abstract: 2743021446
Text: Fair-Rite Product's Catalog Part Data Sheet, 2743021446 Printed: 2010-11-09 Fair-Rite Products Corp. PO Box J,One Commercial Row, Wallkill, NY 12589-0288 Phone: 888 324-7748 www.fair-rite.com Part Number: 2743021446 Frequency Range: Broadband Frequencies 25-300 MHz (43 & 44 materials)
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AN1294
Abstract: PD55008 PD55008S 11 0741
Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD55008
PD55008S
PD55008
PowerSO-10RF.
AN1294
PD55008S
11 0741
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R36W
Abstract: lnk303 samsung ltn LD3130 CRC10 MXT3010 R44-R47 M 8012 R54-R55 t9354
Text: MXT3010 Reference Manual Version 4.1 Order Number: 100108-05 October 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the
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MXT3010
16-bit
MXT3010
R36W
lnk303
samsung ltn
LD3130
CRC10
R44-R47
M 8012
R54-R55
t9354
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AN1294
Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package
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PD57006-E
PD57006S-E
945MHz
PowerSO-10RF
PD57006
PowerSO-10RF.
PD570and
AN1294
PD57006-E
PD57006S
PD57006S-E
PD57006STR-E
PD57006TR-E
PD57006E
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transistor smd po3
Abstract: PD55003 AN1294 PD55003S
Text: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55003
PD55003S
PD55003
PowerSO-10RF.
transistor smd po3
AN1294
PD55003S
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MRF1513 equivalent
Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor
Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband
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MRF1513/D
MRF1513T1
MRF1513T1
MRF1513 equivalent
2743021446
MRF1513
AN721
J524
AN211A
AN215A
Transistor J438
J182 transistor
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Untitled
Abstract: No abstract text available
Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
MRF186
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF1517N Rev. 7, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1517N
MRF1517NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF1513 Rev. 7, 5/2006 Replaced by MRF1513NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF1513
MRF1513NT1.
MRF1513T1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1518/D
MRF1518T1
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MRF186
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
MRF186
DEVICEMRF186/D
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PD55003TR
Abstract: transistor smd po3 901 704 16 08 55 AN1294 PD55003 PD55003-E PD55003S Z1033
Text: PD55003-E PD55003S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package PowerSO-10RF
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PD55003-E
PD55003S-E
500MHz
PowerSO-10RF
PD55003
PowerSO-10RF.
PD55003TR
transistor smd po3
901 704 16 08 55
AN1294
PD55003-E
PD55003S
Z1033
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MRF186
Abstract: No abstract text available
Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
MRF186
MRF186
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AN721
Abstract: J361 AN211A AN215A MRF1518T1 transistor j334 j327 transistor
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial
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MRF1518/D
MRF1518T1
MRF1518T1
AN721
J361
AN211A
AN215A
transistor j334
j327 transistor
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MRF186
Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Text: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
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MRF186/D
31JAN05
MRF186
31JUL04
MRF186
C10B4
motorola MOSFET 935
Z11-Z16
RF power amplifier MHz
MRF186 equivalent
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J-031
Abstract: AN211A AN215A AN721 MRF1511T1
Text: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband
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MRF1511/D
MRF1511T1
MRF1511T1
DEVICEMRF1511/D
J-031
AN211A
AN215A
AN721
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0.5 W silicon zener diode
Abstract: TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF1518T1 MRF-151
Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF1518/D
MRF1518T1
MRF1518T1
DEVICEMRF1518/D
0.5 W silicon zener diode
TRIMMER capacitor 82 pF
MRF151
mosfet 440 mhz
MRF1518
AN211A
AN215A
AN721
MRF-151
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2743021446
Abstract: j494 AN215A AN721 FM LDMOS freescale transistor A113 AN211A AN4005 EB212 MRF1513N
Text: Freescale Semiconductor Technical Data Document Number: MRF1513N Rev. 10, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1513NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device
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MRF1513N
MRF1513NT1
2743021446
j494
AN215A
AN721
FM LDMOS freescale transistor
A113
AN211A
AN4005
EB212
MRF1513N
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transistor smd 6z
Abstract: smd transistor 6Z SMD Transistor 9z transistor smd 4z SMD Transistor 7z smd 93 3Z 901 704 16 08 55 PD55003TR AN1294 PD55003
Text: PD55003-E PD55003S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package
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PD55003-E
PD55003S-E
500MHz
PowerSO-10RF
PD55003
PowerSO-10RF.
PD55and
transistor smd 6z
smd transistor 6Z
SMD Transistor 9z
transistor smd 4z
SMD Transistor 7z
smd 93 3Z
901 704 16 08 55
PD55003TR
AN1294
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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F5003
Abstract: 1N4734
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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F5003
MRF5003
MRFS003
AN215A,
F5003
1N4734
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MRF5003
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor MRF5003 MRF5003R1 N-Channel Enhancement-Mode The MRF5003 is designed for broadband com m ercial and industrial applications at frequencies to 520 MHz. The high gain and broadband
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MRF5003
AN215A,
MRF5003R1
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