LD33A
Abstract: YTFP153 uc 600
Text: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - YTFP153 MOSI INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&0M AX . 0S.2ÌO.S V. DRIVE APPLICATIONS. iSL FEATURES:
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YTFP153
500nA
250uA
250ijA
-55M50
ID-20A
IDR-33A
IDR-33A
LD33A
YTFP153
uc 600
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA <DISCRETE/OPTO fä h ih a 99D 16778 D"T:'3>9-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 1 5 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA flV M O SE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS
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100nA
250pA
250iJA
00A/us
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Untitled
Abstract: No abstract text available
Text: IRLW/I630A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* «Operating Temperature Lower Leakage Current : 10pA M ax. @ VDS = 200V ^ D S(o n ) =
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IRLW/I630A
7Tb414E
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transistor c905
Abstract: LE C906 c912 c906 transistor
Text: P D - 9.1107 Iitemational S Rectifier IRGBC30KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ps @125°C, VGE= 15V • Switching-loss rating includes all "tail" losses
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-10ps
IRGBC30KD2
O-22QAB
C-912
transistor c905
LE C906
c912
c906 transistor
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kds 9a
Abstract: No abstract text available
Text: TOSHIBA {DI SC RETE/ OP TO} ' S d Ë T J t DT 72 S O DOlbTTO D 99D 16790 9097250 TOSHIBA OISCRETE/OPTO ¿Toshiha D T13*7-1 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 2 3 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( 7t-MOS I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250uA
250ijA
10Vr-i
00A/us
kds 9a
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Untitled
Abstract: No abstract text available
Text: Ti /TOSHIBA {DISCR ETE /OPTO} 99D 16848 9097250 TOSHIBA <DIS C R E T E / O P T O TOSHIBA SEMICONDUCTOR ¿TüShihtt D eT ^ DT 72 5 O aGlbfiMñ 5 0^3^13 FIELD EFFECT TRANSISTOR Y T F 5 4 2 SILICON TECHNICAL DATA N CHANNEL MOS TYPE 7 T -M 0S I ) INDUSTRIAL APPLICATIONS
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250pA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E TCH7550 D QOlTTflM ? T O S H IB A F IE L D E F F E C T T R A N S IS T O R S I L I C O N N C H A N N E L M O S T Y P E (ir - ITOS*4 YTFP451 M O S I) INDUSTRIAL APPLICATIONS Unit ln mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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TCH7550
YTFP451
-450V
250ijA
VDS-25V,
VGS-10V
Ta-25Â
IDR-13A
00A/us
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Untitled
Abstract: No abstract text available
Text: "ri TOSHIBA O I S C R E T E / O P T O } DE I ^ D ^ E S G GOlbfiSb 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA ^aSììbn SEMICONDUCTOR FIELD EFFECT TRANSISTOR Y T F 6 1 2 S I L I C O N -N C H A N N E L TECHNICAL DATA MOS TYPE (TT-MOSII) INDUSTRIAL APPLICATIONS
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500nA
250uA
00A/us
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sgsp474
Abstract: No abstract text available
Text: SGSP474 SGSP475 Æ 7 SGS-THOMSON ^ 7 # RíflD IS Q IILll©M)RDD©Í N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) •d SGSP474 SGSP475 450 V 400 V 0.7 fl 0.55 fi 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS
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SGSP474
SGSP475
100kHz
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lM41a
Abstract: No abstract text available
Text: IRFW/I624A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ I BV0SS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jj A Max. @ VOS= 250V
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IRFW/I624A
lM41a
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } Ti 99D 16816 9097250 TOSHIBA DISCRETE/OPTO> /Toihibti Ï eT I T D T 7 2 5 D GGlbfllh DT-^-lâ TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 4 2 SILICON N CHANNEL HOS TYPE TECHNICAL DATA (J2VM0SI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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-100nA
250ViA
250iJA
00A/ys
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Untitled
Abstract: No abstract text available
Text: kitemational l HRectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all 'tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGB430U
O-220AB
O-22QAB
C-586
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16AL
Abstract: No abstract text available
Text: bitemational S Rectifier P D - 9 .1 0 3 3 A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve
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IRGP450U
O-247AC
16AL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S D OOlbßMG O f * D 'T S R - il 99D 16840 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOS I) INDUSTRIAL APPLICATIONS Unit in mra
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500nA
250yA
250ijA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } Tí Í e1 c]Gcí75SG □Dlb774 9097250 TOSHIBA DISCRETE/OPTO ¿Toihibn TOSHIBA SEMICONDUCTOR FIELD EFFECT TRANSISTOR Y T F 1 5 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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Dlb774
250pA
250iJA
00A/us
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YTFP250
Abstract: No abstract text available
Text: TO SHIBA DISCRETE/OPTO 45E D • cìOcì725G □ G l T ' m T O S H I B A F I E L D E F F E C T T R A N S I S T O R _ 4 ■ TOS4 Y T C P 9 R IÌ S I L I C O N N C H A N N E L M O S T Y P E ( ir - YTrP250 M O S I)
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YTFP250
10OnA
IDSS-250uA
VDS-200V
Id-250uA
RGS-20kii)
Ta-25
IDR-30A
dlDR/dt-100A/us
YTFP250
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA <DISCRETE/OPTO SEMICONDUCTOR DE I TOTTSSD DDlbflhfl D 99D 16868 D "F39-1 TOSHIBA FIELD EFFECT TRANSISTOR Y T F 6 3 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0S I) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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F39-1
500nA
250uA
250uA
Tc-25Â
00A/us
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transistor 16870
Abstract: 16870 transistor tr/1/16870 transistor
Text: TOSHIBA OISCRETE/OPTO} 9097250 TOSHIBA ¿/oshiht Ti DISCRETE/OPTO 99D 16870 D / TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F-6 3 1 SILICON N CHANNEL.MOS TYPE TECHNICAL DATA ( 71 - M O S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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tCH72SD
500nA
250uA
250yA
Vds-120V
00A/us
transistor 16870
16870 transistor
tr/1/16870 transistor
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