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Catalog Datasheet	MFG & Type	Document Tags	PDF
TMPZ84C015A Abstract: No abstract text available Text: TOSHIBA TM PZ84C015A Difference with Technical Data book means symbol:* 1 The on-chip clock ge n e ra to r and co n tro lle r (CGC) has th e c a p a b ility to co n tro l fo u r op eration modes. However ID LE 2 mode is not guarranteed to the current product with m ask revision	OCR Scan	PZ84C015A PUZ80-754 TMPZ84C015A PUZ80-755 MPUZ80-7 MPUZ80-757 TMPZ84C015A	PDF
VQE 24 Abstract: IRG4PC40UD Text: International IGR Rectifier PD 9.1467C IRG4PC40UD P R B iM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200	OCR Scan	1467C IRG4PC40UD O-247AC VQE 24 IRG4PC40UD	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA O I S C R E T E / O P T O } Ti 99D 16816 9097250 TOSHIBA DISCRETE/OPTO> /Toihibti Ï eT I T D T 7 2 5 D GGlbfllh DT-^-lâ TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 4 2 SILICON N CHANNEL HOS TYPE TECHNICAL DATA (J2VM0SI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.	OCR Scan	-100nA 250ViA 250iJA 00A/ys	PDF
Untitled Abstract: No abstract text available Text: U N Doc #; 1552 h m m I A 1552/3/4/5 Y M I C R O E L E C T R O N I C S T h e I n f i n i t e P o w e r o f I U ltra-L o w S tart- U p C u r r en t , Cu r r e n t -N Io d e P W M n n o v a t i o n P r o d u c t i o n • TRIMMED OSCILLATOR DISCHARGE CURRENT ±2% typ.	OCR Scan	90VAC: 130VAC: 530fl0 90VAC 130VAC 40KHz LX1554	PDF
IRG4PH50U Abstract: eb 2030 *g4ph50u Text: International IQR Rectifier PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter	OCR Scan	IRG4PH50U O-247AC IRG4PH50U eb 2030 *g4ph50u	PDF
Untitled Abstract: No abstract text available Text: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,	OCR Scan	IRG4BC20K SS45S	PDF
transistor lnw smd Abstract: No abstract text available Text: Pulse-load Battery Monitor D escription T h e C S -2 5 1 6 is d e s ig n e d fo r u s e in b a t te ry p o w e re d m e d ic a l, s e c u r ity , o r e n v ir o n m e n ta l s y s te m s w h e r e p r io r n o tific a tio n o f im p e n d in g p o w e r	OCR Scan	CS-2516 CS-2516N8 CS-2516D8 transistor lnw smd	PDF