H40P
Abstract: MARCONI power NN12 P35-5134-000-200
Text: P35-5134-000-200 HEMT MMIC 1W POWER AMPLIFIER, 24GHz Features • • • Gain; 16dB typical @ 24GHz P-1dB; 30.5dBm typical @ 24GHz 0.20 ? m pHEMT technology Description The P35-5134-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers
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P35-5134-000-200
24GHz
P35-5134-000-200
24GHz
463/SM/02577/000
H40P
MARCONI power
NN12
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Ultrasonic cleaner circuit diagram
Abstract: MARCONI power P35-5133-000-200 H40P NN12
Text: P35-5133-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 24GHz Features • • • • Gain; 19dB typical @ 24GHz P-1dB; 29dBm typical @ 24GHz 20% PAE 0.20 um pHEMT technology Description The P35-5133-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers
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P35-5133-000-200
24GHz
29dBm
P35-5133-000-200
24GHz
463/SM/02226/000
Ultrasonic cleaner circuit diagram
MARCONI power
H40P
NN12
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mmic n1
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
mmic n1
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Untitled
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
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24ghz
Abstract: FMM5701X
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
FCSI0598M200
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FMM5701X
Abstract: EUDYNA eudyna an
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
EUDYNA
eudyna an
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FMM5701X
Abstract: 18-28GHz
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the
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FMM5701X
24GHz
24GHz
18-28GHz
FMM5701X
18-28GHz
FCSI0598M200
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FMM5701LG
Abstract: 26GHz LNA nf 931 24ghz FMM5701X mmic n1 diode Free 18-24GHz 584 amplifer 584 MMIC microwave databook
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION
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FMM5701LG
20GHz
24GHz
18-24GHz
FMM5701LG
18-24GHz
26GHz LNA
nf 931
24ghz
FMM5701X
mmic n1
diode Free 18-24GHz
584 amplifer
584 MMIC
microwave databook
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MARCONI power
Abstract: MARCONI amplifier
Text: P35-5115-000-200 HEMT MMIC LNA 17 - 24GHz Features • • Typical 2dB Noise Figure @ 24GHz Small 1.8 x 0.94mm Die Size Description The P35-5115-000-200 is a 17-24GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point microwave systems and satellite communications.
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P35-5115-000-200
24GHz
P35-5115-000-200
17-24GHz
18-24GHz
463/SM/02591/000
MARCONI power
MARCONI amplifier
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diode Free 18-24GHz
Abstract: 84-1LMI NN12 P35-5115-000-200 MARCONI amplifier
Text: P35-5115-000-200 HEMT MMIC LNA 17 - 24GHz Features • • Typical 2dB Noise Figure @ 24GHz Small 1.8 x 0.94mm Die Size Description The P35-5115-000-200 is a 17-24GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point and point to point microwave systems.
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P35-5115-000-200
24GHz
P35-5115-000-200
17-24GHz
18-24GHz
18-24GHry
462/SM/02591/200
diode Free 18-24GHz
84-1LMI
NN12
MARCONI amplifier
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Untitled
Abstract: No abstract text available
Text: RFAM9000 RFAM9000 100MHz to 24GHz, High Reliability Military/Space Amp Connectorized 100MHZ TO 24GHZ, HIGH RELIABILITY MILITARY/SPACE AMP CONNECTORIZED Package: Module, 2 RF Connectors, 2 DC Pins, 21.34mmx7.77mmx4.69mm Features
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RFAM9000
100MHz
24GHz,
34mmx7
77mmx4
10GHz
24dBm
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MIL-STD-883H
Abstract: No abstract text available
Text: RFAM9000 RFAM9000 100MHz to 24GHz, High Reliability Military/Space Amp Connectorized 100MHZ TO 24GHZ, HIGH RELIABILITY MILITARY/SPACE AMP CONNECTORIZED Package: Module, 2 RF Connectors, 2 DC Pins, 21.34mmx7.77mmx4.69mm Features
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RFAM9000
100MHz
24GHz,
RFAM9000
34mmx7
77mmx4
10GHz
24dBm
MIL-STD-883H
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18GHz
Abstract: CHA5293a-99F/00
Text: CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2 Vg3 Vd3 The CHA5293a is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA5293a
17-24GHz
CHA5293a
17-24GHz
30dBm
DSCHA52932123
-03-May-02
18GHz
CHA5293a-99F/00
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bp 1361
Abstract: PS11 PS12 PS22 CHA2090 MS11 MS12 MS21 MS22
Text: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard 0.25µm gate length pHEMT process, via
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CHA2090
17-24GHz
CHA2090
17-24GHz
DSCHA20909347-13
bp 1361
PS11
PS12
PS22
MS11
MS12
MS21
MS22
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A1266
Abstract: transistor a1266 a1266 transistor A-1266
Text: EC4H08C Ordering number : ENA1266 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H08C UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • High cut-off frequency : fT=24GHz typ VCE=3V . Low operating voltage.
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ENA1266
EC4H08C
24GHz
S21e2
A1266-3/3
A1266
transistor a1266
a1266 transistor
A-1266
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pin diagram of ic 7493
Abstract: ic 7493 pin function of ic 7493 7493 IC 7493 pc data sheet IC 7493 TRANSISTOR cBC 415 marking MD 7493 7493 APPLICATION
Text: Ordering number : ENN7493 SBFP450M SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SBFP450M High-Frequency Medium-Output Amplifier, RF Driver / Power Amp Applications Features • • • • Low noise : NF=1.25dB typ f=1.8GHz . High cut-off frequency : fT=24GHz typ
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ENN7493
SBFP450M
24GHz
17GHz
S21e2
pin diagram of ic 7493
ic 7493
pin function of ic 7493
7493 IC
7493 pc
data sheet IC 7493
TRANSISTOR cBC 415
marking MD
7493
7493 APPLICATION
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CHA2090-99F/00
Abstract: bp 1361 CHA2090 MS11 MS12 MS21 MS22 PS11 PS12 PS22
Text: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via
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CHA2090
17-24GHz
CHA2090
17-24GHz
DSCHA20909347
CHA2090-99F/00
bp 1361
MS11
MS12
MS21
MS22
PS11
PS12
PS22
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Untitled
Abstract: No abstract text available
Text: CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard 0.25µm gate length pHEMT process, via
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CHA2090
17-24GHz
CHA2090
17-24GHz
DSCHA20909347-13
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CHA2292
Abstract: No abstract text available
Text: CHA2292 RoHS COMPLIANT 16-24GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication
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CHA2292
16-24GHz
CHA2292
16-24GHz
DSCHA22927150
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24ghz
Abstract: CHA2292
Text: CHA2292 RoHS COMPLIANT 16-24GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2292 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication
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CHA2292
16-24GHz
CHA2292
17-24GHz
DSCHA22927150
24ghz
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Untitled
Abstract: No abstract text available
Text: CHA4863-QGG RoHS COMPLIANT 17-24GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4863-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of applications, typically
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CHA4863-QGG
17-24GHz
CHA4863-QGG
A4863
17-24GHz
28dBm
200mA
28L-QFN5x5
DSCHA4863-QGG1194
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Untitled
Abstract: No abstract text available
Text: CHX2090-QDG RoHS COMPLIANT 12-24GHz Frequency Multiplier GaAs Monolithic Microwave IC in SMD leadless package Description The CHX2090-QDG is a cascadable frequency doubler monolithic circuit, which integrate an output buffer amplifier that produces a constant output power over a
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CHX2090-QDG
12-24GHz
CHX2090-QDG
11-13GHz
13dBm
14dBm
DSCHX2090QDG0211
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Untitled
Abstract: No abstract text available
Text: CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2 Vg3 Vd3 The CHA5293a is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA5293a
17-24GHz
CHA5293a
17-24GHz
31dBm
DSCHA5293A3119
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Untitled
Abstract: No abstract text available
Text: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1,5dB MAX. @ f=20GHz NF=1.8dB (MAX.) @ f=24GHz NF=2.3dB (MAX.) @ f=28GHz • High Associated Gain: Gas=15.0dB (MIN.) @ f=20GHz Gas=12.0dB (MIN.) @ f=24GHz Gas=9.0dB (MIN.) @f=28GHz
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FMM5701X
24GHz
20GHz
24GHz
28GHz
18-28GHz
FMM5701X
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