D16NF06L
Abstract: JESD97 STD16NF06L STD16NF06L-1 STD16NF06LT4
Text: STD16NF06L STD16NF06L-1 N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD16NF06L-1 60V <0.070Ω 24A STD16NF06L 60V <0.070Ω 24A • Logic level device ■ Low threshold drive 3 3 2 1 iPAK 1 DPAK
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STD16NF06L
STD16NF06L-1
D16NF06L
JESD97
STD16NF06L
STD16NF06L-1
STD16NF06LT4
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D20NF06L
Abstract: D20NF06L-1 JESD97 STD20NF06L STD20NF06L-1 D20NF th414
Text: STD20NF06L STD20NF06L-1 N-channel 60V - 0.032Ω - 24A - DPAK - IPAK STripFET II Power MOSFET General features • Type VDSS RDS on ID STD20NF06L 60V <0.040Ω 24A STD20NF06L-1 60V <0.040Ω 24A Exceptional dv/dt capability 3 3 2 1 ■ 100% avalanche tested
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STD20NF06L
STD20NF06L-1
D20NF06L
D20NF06L-1
JESD97
STD20NF06L
STD20NF06L-1
D20NF
th414
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Untitled
Abstract: No abstract text available
Text: STD16NF06L STD16NF06L-1 N-channel 60V - 0.060Ω - 24A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD16NF06L-1 60V <0.070Ω 24A STD16NF06L 60V <0.070Ω 24A • Logic level device ■ Low threshold drive 3 3 2 1 iPAK 1 DPAK
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STD16NF06L
STD16NF06L-1
STD16NF06L-1
STD16NF06L
STD16NF06LT4
D16NF06L
D16NFerein
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D20NF
Abstract: STD20NF06 JESD97 STD20NF06T4
Text: STD20NF06 N-channel 60V - 0.032Ω - 24A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD20NF06 60V <0.040Ω 24A • Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested 3 1 DPAK Description
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STD20NF06
D20NF
STD20NF06
JESD97
STD20NF06T4
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Untitled
Abstract: No abstract text available
Text: Mini European PCB Terminal Blocks CIF-V Series CIM-V 90° Series Specifications: CIF/CIM Series 24A 300V 24A 300V 5 and 5.08mm 5 and 5.08mm Features: !" Series is supplied with the clamp in the open position !" Double captive screws !" Elevator clamp system
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ESA014000110
ESA014001120
ESA014002130
ESA014003140
ESA014004150
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F24NF12
Abstract: dt-600A F24NF stf*24nf12 JESD97 ST 0366
Text: STF24NF12 N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET II MOSFET General features Type VDSS RDS on ID STF24NF12 120V <0.077Ω 24A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization
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STF24NF12
O-220FP
F24NF12
dt-600A
F24NF
stf*24nf12
JESD97
ST 0366
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RS1e240
Abstract: No abstract text available
Text: RS1E240GN Nch 30V 24A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 3.3mW RDS(on) at 4.5V (Max.) 4.4mW ID 24A PD 3.0W lFeatures HSOP8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source
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RS1E240GN
R1102A
RS1e240
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Untitled
Abstract: No abstract text available
Text: R6024ENJ Nch 600V 24A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source
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R6024ENJ
SC-83)
R1102A
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Untitled
Abstract: No abstract text available
Text: R6024ENJ Nch 600V 24A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source
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R6024ENJ
SC-83)
R1102A
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L508
Abstract: 24A marking
Text: EuroPCB Tower Terminal Blocks PSQ PEQ M Series PSQ (PEQ) H Series 5 and 5.08mm 24A 300V 24A 300V 5 and 5.08mm Specifications:PSQ(PEQ) Series Features: *PSQ is green color with clamp in the open position *PEQ is black with clamp in the closed position *Double captive screws
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Untitled
Abstract: No abstract text available
Text: R6024ENZ1 Nch 600V 24A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6024ENZ1
O-247
R1102A
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Untitled
Abstract: No abstract text available
Text: MQFL-28E-05S Single Output H igH R eliability DC-DC C onveRteR 16-70V 16-80V 5.0V 24A 89% @ 12A / 88% @ 24A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-28E-05S
6-70V
6-80V
005-2MQ05ES
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Untitled
Abstract: No abstract text available
Text: R6024ENX Nch 600V 24A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6024ENX
O-220FM
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6024ENZ1 Nch 600V 24A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6024ENZ1
O-247
R1102A
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Untitled
Abstract: No abstract text available
Text: MQFL-28-05S Single Output H igH R eliability DC-DC C onveRteR 16-40V 16-50V 5.0V 24A 89% @ 12A / 88% @ 24A Continuous Input Transient Input Output Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-28-05S
6-40V
6-50V
005-2MQ050S
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PDF
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Untitled
Abstract: No abstract text available
Text: R6024ENX Nch 600V 24A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6024ENX
O-220FM
R1102A
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Untitled
Abstract: No abstract text available
Text: R6024ENZ Nch 600V 24A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6024ENZ
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6024ENZ Nch 600V 24A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6024ENZ
R1102A
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NTC Thermistor 120
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM200DX-24A IC ….……………….……. 200A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant
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CM200DX-24A
UL1557,
E323585
NTC Thermistor 120
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Untitled
Abstract: No abstract text available
Text: MQFL-28E-05D Dual Output H igH R eliability DC-DC C onveRteR 16-70V 16-80V ±5.0V 24A 90% @ 12A / 88% @ 24A Continuous Input Transient Input Output Total Output Efficiency F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters
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MQFL-28E-05D
6-70V
6-80V
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c2e1 marking
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM150DX-24A IC ….……………….……. 150A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant
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CM150DX-24A
UL1557,
E323585
c2e1 marking
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V 28a 13.5 nC
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SiZ900DT
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)
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SiZ900DT
2002/95/EC
SiZ900DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)
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SiZ900DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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