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    2314 MOSFET Search Results

    2314 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2314 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2314 sot-23

    Abstract: 2314 mosfet APM2314A STD-020C T-23 APM2314 m14x
    Text: APM2314A N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/2.8A , D RDS ON =45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)


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    PDF APM2314A OT-23 2314 sot-23 2314 mosfet APM2314A STD-020C T-23 APM2314 m14x

    Mosfet

    Abstract: SSF2314
    Text: SSF2314 20V N-Channel MOSFET D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application.


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    PDF SSF2314 SSF2314 OT-23 950TYP 550REF Mosfet

    2314 sot-23

    Abstract: 2314 mosfet ANPEC A102 APM2314 J-STD-020A
    Text: APM2314 N-Channel Enhancement Mode MOSFET Features • Pin Description D 20V/2.8A , RDS ON =45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G SOT-23 Package S Top View of SOT-23


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    PDF APM2314 OT-23 OT-23 2314 sot-23 2314 mosfet ANPEC A102 APM2314 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


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    PDF CSD17559Q5 SLPS374

    90G001

    Abstract: omap 4460
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


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    PDF CSD17559Q5 SLPS374 CSD17559Q5 13-Inch 90G001 omap 4460

    Untitled

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


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    PDF CSD17559Q5 SLPS374

    CSD17559Q5

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


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    PDF CSD17559Q5 SLPS374 CSD17559Q5

    Untitled

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


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    PDF CSD17559Q5 SLPS374

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


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    593D

    Abstract: HIP6028 HIP6028CB HIP6028EVAL1 ATI 2313 AN9833
    Text: HIP6028 Data Sheet May 1998 Advanced PWM and Dual Linear Power Control with Integrated ACPI Support Interface The HIP6028 provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM


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    PDF HIP6028 HIP6028 593D HIP6028CB HIP6028EVAL1 ATI 2313 AN9833

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET RFM 12U7X RFM12U7X Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds V, 6.0V, 4.8 Vds = 4.8V, 4.8V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~


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    PDF RFM12U7X 150mA, 350mA, 550mA, 750mA, 950mA, 1150mA

    R5F61663N50FPV

    Abstract: R5F61668RN50FPV HD64F2378RVFQ HD64F2378BVFQ R4F2117LP hd64p2128ps 3 phase dc converter afe circuit diagram igbt R5S61651CN50FPV R5F61657CN35FTV H8S/2116
    Text: 2008.03 Renesas MCUs H8S Family H8SX Family www.renesas.com Learn why Renesas MCUs are preferred. Speedy + Standard + Special + Select + Safety Inheriting the world-renowned H8 architecture, and evolving it even further. This 16-bit/32-bit CISC architecture creates


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    PDF 16-bit/32-bit REJ01B0013-0200 R5F61663N50FPV R5F61668RN50FPV HD64F2378RVFQ HD64F2378BVFQ R4F2117LP hd64p2128ps 3 phase dc converter afe circuit diagram igbt R5S61651CN50FPV R5F61657CN35FTV H8S/2116

    RM35JA32

    Abstract: Square D Relay Class 8501 Type X 4 Pole CA2-KN22 PLC Ladder diagram in Soft Drink Vending Machine schneider sr2b121bd CA2KN22 ZELIO RM35JA32MW RE48A RSZE-1S48M CA2KN31
    Text: Table of Contents Section 23 Relays and Timers General Purpose Relays New! RXM, p. 23-6 RSL, p. 23-45 Zelio Plug-in Relays Square D® Plug-in Square D® Alternating Plug-in Square D® Miniature Plug-in Square D® Sockets Square D® Power 23-2 23-9 23-10


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    PDF REG24 REG48 REG96 RM17JC andRM35JA RM17U RM35U RM17T RM35T RM35L RM35JA32 Square D Relay Class 8501 Type X 4 Pole CA2-KN22 PLC Ladder diagram in Soft Drink Vending Machine schneider sr2b121bd CA2KN22 ZELIO RM35JA32MW RE48A RSZE-1S48M CA2KN31

    car Speed Sensor

    Abstract: 3 phase dc converter afe circuit diagram igbt LQFP1414-120 yokogawa 2655 LEARN ELECTRONIC ECU CAR BLOCK HD64F2639F AIRBAG EMULATION RESISTORS HD64F2378RVFQ R5F61663N50FPV 2314F
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF REJ01B0013-0200 car Speed Sensor 3 phase dc converter afe circuit diagram igbt LQFP1414-120 yokogawa 2655 LEARN ELECTRONIC ECU CAR BLOCK HD64F2639F AIRBAG EMULATION RESISTORS HD64F2378RVFQ R5F61663N50FPV 2314F

    Untitled

    Abstract: No abstract text available
    Text: IMPORTANT NOTICE Dear customer, As from June 1st, 2007 NXP Semiconductors has acquired the LH7xxx ARM Microcontrollers from Sharp Microelectronics. The following changes are applicable to the attached data sheet. In data sheets where the previous Sharp or Sharp Corporation references remain, please use the new


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    IRFD110

    Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
    Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


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    PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112

    VK200 INDUCTOR

    Abstract: inductor vk200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


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    PDF MRF175LU MRF175LV MRF175L MRF175LU MRF175LV VK200 INDUCTOR inductor vk200

    UFN742

    Abstract: N-Channel mosfet 400v to220 2314Y UFN741
    Text: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling


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    PDF UFN742 UFN743 N-Channel mosfet 400v to220 2314Y UFN741

    g598

    Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
    Text: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International


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    PDF s54s2 T-39-13 IRFH25Ã G-597 IRFH250 G-598 g598 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595

    TEA5712T

    Abstract: dts circuit board
    Text: Product specification Philips Semiconductors TEA5712; TEA5712T AM/FM stereo DTS radio circuit • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM


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    PDF TEA5712; TEA5712T TEA5712T dts circuit board

    variable coils toko s18

    Abstract: murata cda murata sfe FMRF dts circuit board
    Text: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM


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    PDF TEA5712; TEA5712T 711Gfl2L> variable coils toko s18 murata cda murata sfe FMRF dts circuit board

    CDA 10.7 MC 40

    Abstract: dts circuit board BB112 equivalent variable coils toko s18 CDA 10.7 TEA5712T bb112 murata SFE 10.7 FM radio CIRcuit DIAGRAM TEA5712
    Text: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM


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    PDF TEA5712; TEA5712T /TH0T76 711002b CDA 10.7 MC 40 dts circuit board BB112 equivalent variable coils toko s18 CDA 10.7 TEA5712T bb112 murata SFE 10.7 FM radio CIRcuit DIAGRAM TEA5712

    TEA5712

    Abstract: dts circuit board variable capacitors am/fm FM radio CIRcuit DIAGRAM ift variable for radio FM stereo MPX Decoder A2701 AM FM radio CDA 10.7 MC 40 Pin diode G4S
    Text: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Designed for simple and reliable printed-circuit board layout • Low current consumption: 16 mA at AM, 17 mA at FM


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    PDF TEA5712; TEA5712T 711082b TEA5712 dts circuit board variable capacitors am/fm FM radio CIRcuit DIAGRAM ift variable for radio FM stereo MPX Decoder A2701 AM FM radio CDA 10.7 MC 40 Pin diode G4S

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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