SN65HVD53
Abstract: SN65HVD54 SN65HVD55
Text: SN65HVD50-SN65HVD59 www.ti.com SLLS666A – SEPTEMBER 2005 – REVISED FEBRUARY 2006 HIGH OUTPUT FULL-DUPLEX RS-485 DRIVERS AND RECEIVERS • • • • • • • 1/8 Unit-Load Option Available Up to 256 Nodes on the Bus Bus-Pin ESD Protection Exceeds 15 kV HBM
|
Original
|
PDF
|
SN65HVD50-SN65HVD59
SLLS666A
RS-485
TIA/EIA-485-A
RS-422
SN65HVD30-39
SN65HVD53
SN65HVD54
SN65HVD55
|
usb62 st
Abstract: usb62 USB62 SO8 st usb62
Text: USB6B1 Data line protection Applications Where transient overvoltage protection in sensitive equipment is required, such as: • Universal Serial Bus ports ■ RS-423 interfaces ■ RS-485 interfaces ■ ISDN equipment ■ T1/E1 line cards ■ HDSL / ASDL interfaces
|
Original
|
PDF
|
RS-423
RS-485
USB62
usb62 st
usb62
USB62 SO8
st usb62
|
LM317MKTPR
Abstract: 1N4002 LM317M LM317MDCY LM317MDCYR LM317MQDCYR LM317MQDCYRG3 LM317MQKTPR
Text: LM317M 3-TERMINAL ADJUSTABLE REGULATOR www.ti.com SLVS297M – APRIL 2000 – REVISED OCTOBER 2005 FEATURES • INPUT OUTPUT • • • • • KTP PACKAGE TOP VIEW Output Voltage Range Adjustable From 1.25 V to 37 V Output Current Greater Than 500 mA Internal Short-Circuit Current Limiting
|
Original
|
PDF
|
LM317M
SLVS297M
LM317M
LM317MKTPR
1N4002
LM317MDCY
LM317MDCYR
LM317MQDCYR
LM317MQDCYRG3
LM317MQKTPR
|
STM1E-SFPxx Datasheet
Abstract: No abstract text available
Text: STM1E-SFPxx 155Mbps Copper Transceiver Features • • • • • • • • Compatible with the Multi-Source Agreement MSA for SFP transceivers 75Ω media interface compliant with ITU-T G.703 and Telcordia GR-253 for CMI coded 155Mbps electrical interfaces
|
Original
|
PDF
|
155Mbps
GR-253
STM1E-SFP08
SFP-6500-08
22-FEB-2006
STM1E-SFPxx Datasheet
|
Untitled
Abstract: No abstract text available
Text: STTH6110TV Ultrafast recovery - high voltage diode Main product characteristics IF AV 2 x 30 A VRRM 1000 V Tj 150° C VF (typ) 1.3 V trr (typ) 42 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses
|
Original
|
PDF
|
STTH6110TV
STTH6110TV1
STTH6110TV2
|
Untitled
Abstract: No abstract text available
Text: INA117 INA 117 INA 117 www.ti.com High Common-Mode Voltage DIFFERENCE AMPLIFIER FEATURES APPLICATIONS ● COMMON-MODE INPUT RANGE: ±200V VS = ±15V ● PROTECTED INPUTS: ±500V Common-Mode ±500V Differential ● UNITY GAIN: 0.02% Gain Error max ● NONLINEARITY: 0.001% max
|
Original
|
PDF
|
INA117
INA117
|
Untitled
Abstract: No abstract text available
Text: STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5ns Typ. at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V ■ Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C ■ Low "ON" resistance:
|
Original
|
PDF
|
STG3155
300mA
|
AFE8406
Abstract: AFE8406IZDQ CDMA2000-1X PSUEDO RANDOM SEQUENCE GENERATOR WCDMA receiver UMTS baseband
Text: www.ti.com AFE8406 14-BIT, 85 MSPS DUAL ADC, 8-CHANNEL WIDEBAND RECEIVER SLWS168A – MAY 2005 – REVISED FEBRUARY 2006 1 Introduction 1.1 • • • • • • • • • • • FEATURES 14-Bit 85-MSPS High-Performance Dual ADC Dual ADC Can Be Configured Into Single ADC
|
Original
|
PDF
|
AFE8406
14-BIT,
SLWS168A
14-Bit
85-MSPS
18-Amplifiers
AFE8406
AFE8406IZDQ
CDMA2000-1X
PSUEDO RANDOM SEQUENCE GENERATOR
WCDMA receiver UMTS baseband
|
1NK60Z
Abstract: STN1NK60Z 1Nk60 JESD97 STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP mosfet 600V 100A ST std1lnk60z Marking STMicroelectronics zener diode
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V - 13Ω - 0.8A - TO-92 - IPAK - SOT-223 Zener-Protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
|
Original
|
PDF
|
STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
OT-223
STQ1NK60ZR
1NK60Z
STN1NK60Z
1Nk60
JESD97
STD1LNK60Z-1
STQ1NK60ZR-AP
mosfet 600V 100A ST
std1lnk60z
Marking STMicroelectronics zener diode
|
1Nk60
Abstract: 1NK60Z STQ1NK60ZR-AP 1nk60zr JESD97 STD1LNK60Z-1 STN1NK60Z
Text: STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS on ID Pw STD1LNK60Z-1 600V <15Ω 0.8A 25W STQ1NK60ZR-AP 600V <15Ω 0.3A 3W STN1NK60Z 600V <15Ω
|
Original
|
PDF
|
STD1LNK60Z-1
STQ1NK60ZR-AP
STN1NK60Z
O-251
OT-223
STQ1NK60ZR-AP
1Nk60
1NK60Z
1nk60zr
JESD97
STD1LNK60Z-1
STN1NK60Z
|
Untitled
Abstract: No abstract text available
Text: STN1NK60Z, STQ1NK60ZR-AP N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features VDS RDS on max ID 600 V 15 Ω 0.3 A Order codes STN1NK60Z 4 1 2 STQ1NK60ZR-AP 3 SOT-223
|
Original
|
PDF
|
STN1NK60Z,
STQ1NK60ZR-AP
OT-223
STN1NK60Z
OT-223
AM01476v1
DocID9509
|
14/UC 3643 cd
Abstract: JESD97 STG3155 STG3155DTR HMB ST
Text: STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5ns Typ. at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V ■ Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C ■ Low "ON" resistance:
|
Original
|
PDF
|
STG3155
300mA
14/UC 3643 cd
JESD97
STG3155
STG3155DTR
HMB ST
|
Untitled
Abstract: No abstract text available
Text: SN54ALVTH16374, SN74ALVTH16374 2.5-V/3.3-V 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS SCES068F – JUNE 1996 – REVISED JANUARY 1999 D D D D D D D D D D D D D State-of-the-Art Advanced BiCMOS Technology ABT Widebus Design for 2.5-V and 3.3-V Operation and Low Static
|
Original
|
PDF
|
SN54ALVTH16374,
SN74ALVTH16374
16-BIT
SCES068F
|
usb62
Abstract: usb62 st st usb62 usb6b1 JESD97 RS-423 SMP100-8 SMP75-8
Text: USB6B1 Data line protection Applications Where transient overvoltage protection in sensitive equipment is required, such as: • Universal Serial Bus ports ■ RS-423 interfaces ■ RS-485 interfaces ■ ISDN equipment ■ T1/E1 line cards ■ HDSL / ASDL interfaces
|
Original
|
PDF
|
RS-423
RS-485
USB62
usb62
usb62 st
st usb62
usb6b1
JESD97
SMP100-8
SMP75-8
|
|
1528cl
Abstract: No abstract text available
Text: STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5ns Typ. at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V ■ Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C ■ Low "ON" resistance:
|
Original
|
PDF
|
STG3155
300mA
STG3155
1528cl
|
usb62
Abstract: usb62 st USB62 SO8 st usb62 USB6B1
Text: USB6B1 IPAD DATA LINES PROTECTION APPLICATIONS Where transient overvoltage protection in sensitive equipment is required, such as: - Universal Serial Bus ports - RS-423 interfaces - RS-485 interfaces - ISDN equipment - T1/E1 line cards - HDSL / ASDL interfaces
|
Original
|
PDF
|
RS-423
RS-485
USB62
USB62
usb62 st
USB62 SO8
st usb62
USB6B1
|
ST 9509
Abstract: 1NK60Z 9509 STQ1NK60ZR-AP 1nk60 Power MOSFET SOT-223 STN1NK60Z 1nk60zr A1 SOT-223 MOSFET
Text: STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 Ω, 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes STQ1NK60ZR-AP STN1NK60Z VDSS RDS on ID 600 V < 15 Ω 0.3 A • 100% avalanche tested ■ Extremely high dv/dt capability ■
|
Original
|
PDF
|
STN1NK60Z
STQ1NK60ZR-AP
OT-223
ST 9509
1NK60Z
9509
STQ1NK60ZR-AP
1nk60
Power MOSFET SOT-223
STN1NK60Z
1nk60zr
A1 SOT-223 MOSFET
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - RELEASED FOR PUBLICATION 6 5 4 3 2 - LOC - ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST - P LTR C 11.81 REV PER ECO 13-020078 DWN 2 CONTACT: 1.27µm MIN GOLD IN PAD CONTACT AREA 1.27µm MIN TIN-LEAD ON PCB TAIL
|
Original
|
PDF
|
UL94V0,
22FEB2006
|
VE 09 2750
Abstract: pxa270
Text: TPS65800 www.ti.com SLVS606A – SEPTEMBER 2005 – REVISED OCTOBER 2005 INTEGRATED SINGLE-CELL LITHIUM-ION BATTERY- AND POWER-MANAGEMENT IC • FEATURES • • APPLICATIONS • • • L1 PGND1 SM1 GPIO1 53 VIN_SM1 54 SM2 AGND1 55 L2 56 VIN_SM2 PGND2 Portable Media Players
|
Original
|
PDF
|
TPS65800
SLVS606A
20-mA,
600-mA
VE 09 2750
pxa270
|
Untitled
Abstract: No abstract text available
Text: GC5016 www.ti.com SLWS142H − JANUARY 2003 − REVISED FEBRUARY 2006 WIDEBAND QUAD DIGITAL DOWNĆCONVERTER/UPĆCONVERTER − FIR Filter Block Consists of 16 Cells Providing up to 256 Taps Per Channel − 64 Parallel Input Bits and 64 Parallel Output Bits Provide Flexible I/O Options
|
Original
|
PDF
|
GC5016
SLWS142H
GC5016
|
STG3155DTR
Abstract: JESD97 STG3155
Text: STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5ns Typ. at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V ■ Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C ■ Low "ON" resistance:
|
Original
|
PDF
|
STG3155
300mA
STG3155
STG3155DTR
JESD97
|
Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWING I S UNPUBLI S HED. COPYRI GHT 20 RELEASED FOR PUBLI CATI ON BY TYCO ELECTRONI CS CORPORATION. ALL 20 LOC DIST AA R 1GH T S RESERVED. R E V 1S I O N S 22 P LTR B C C1 UPER TYP SEE R I GHT LED a cn cn a 3 > s 43 f e rL i^ nThi m in 13“ n> c
|
OCR Scan
|
PDF
|
1J111ii
MAR2000
27JUL2005
I00779Â
|
Untitled
Abstract: No abstract text available
Text: 4 TH 1S DRAW 1NG 4 3 I S UNPUBL 1S H E D , C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 2 20 LOC D I ST REVISIONS R E SE RV ED. P LTR B2 MATER 94 PR HB. D E S C R 1P T 1ON DATE REVISE NOTE 2
|
OCR Scan
|
PDF
|
2MAR2009
22FEB2006
|
Untitled
Abstract: No abstract text available
Text: 4 TH 1S DRAW 1NG A 3 I S UNPUBL 1S H E D . C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL RIGHTS 2 20 LOC REVISIONS D I ST R E SE RV ED. P LTR B2 MATER HB PR D E S C R 1P T 1ON DATE R E V I S E NOTE 2
|
OCR Scan
|
PDF
|
2MAR2009
22FEB2006
|