SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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SA70
Abstract: 18FFFFH
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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DS05-50204-2E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
SA70
18FFFFH
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Untitled
Abstract: No abstract text available
Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION
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IS71VPCF32XS04
73-ball
CF32ES04-8570BI
IS71VPCF32FS04-8570BI
IS71VPCF32AS04-8585BI
IS71VPCF32BS04-8585BI
IS71VPCF32CS04-8585BI
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DL322
Abstract: DL323 DL324
Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x4G
16-Bit)
8-Bit/256
73-Ball
FLB073--73-Ball
DL322
DL323
DL324
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SA70
Abstract: 22a17
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50207-4E
MB84VD2228XEA/EE-85
MB84VD2229XEA/EE-85
71-ball
SA70
22a17
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MARKING SA70
Abstract: MBM29DL324
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0306
MARKING SA70
MBM29DL324
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CA 324G
Abstract: DL322 DL323 DL324
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
CA 324G
DL322
DL323
DL324
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IS1651
Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
IS1651
M29DW323D
M29DW323DB
M29DW323DT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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DS05-50204-1E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
BGA-73P-M01)
MB84VD2218XEC/
D-63303
F9909
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DS05
Abstract: 1E0000H 324BE
Text: MBM29DL32XTE/32XBE80/90 データシート 生産終息品 80/90 MBM29DL32XTE/32XBE Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及
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MBM29DL32XTE/32XBE80/90
MBM29DL32XTE/32XBE
DS05-20881-8
MBM29DL32XTE/32XBE
DS05-20881-8
MBM29DL32XTE/BE
Mbit16
DS05
1E0000H
324BE
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DL322
Abstract: DL323 DL324 M41000002R
Text: Am41DL32x8G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL32x8G
DL322
DL323
DL324
M41000002R
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DL322
Abstract: DL323 DL324
Text: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am49DL32xBG
DL322
DL323
DL324
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Untitled
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
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mbm29DL324BD
Abstract: FPT-48P-M19 FPT-48P-M20
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M 4M x 8/2M × 16 BIT MBM29DL32XTD/BD Dual Operation -80/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)
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DS05-20873-4E
MBM29DL32XTD/BD
MBM29DL32XTD/MBM29DL32XBD
mbm29DL324BD
FPT-48P-M19
FPT-48P-M20
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M29DW323D
Abstract: M29DW323DB M29DW323DT
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW323DT
M29DW323DB
TSOP48
M29DW323D
M29DW323DB
M29DW323DT
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FSA37
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F032204AL-X 32M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The µPD29F032204AL-X is a flash memory organized of 33,554,432 bits and 71 sectors. Sectors of this memory
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PD29F032204AL-X
32M-BIT
16-BIT
PD29F032204AL-X
FSA37
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Centrifugal fans
Abstract: forward curved backward curved dual inlet single inlet
Text: 37777-7-8811 • KO-08/07-12’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut
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KO-08/07-12â
D-74673
D-78112
D-84030
Centrifugal fans
forward curved
backward curved
dual inlet
single inlet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
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AI05
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
AI05
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES
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Am42DL32x4G
16-Bit)
73-Ball
FLB073--73-Ball
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Am29DL324GB
Abstract: No abstract text available
Text: PRELIMINARY Am41DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x8G
16-Bit)
8-Bit/512
73-Ball
Am29DL324GB
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MARKING HRA
Abstract: AMD K7 data sheet FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20881-6E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32XTE/BE80/90 • DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system
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DS05-20881-6E
MBM29DL32XTE/BE80/90
MBM29DL32XTE/BE
F0303
MARKING HRA
AMD K7 data sheet
FPT-48P-M19
FPT-48P-M20
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2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.
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TMP95CS54
16-Bit
TMP95CS54F
TMP95CS54
100-pin
900/H
TLCS-90/900
2216H
XZ MC11
LQFP100-P-1414-0
TMP95CS54F
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